INA163UA [BB]
Low-Noise, Low-Distortion INSTRUMENTATION AMPLIFIER; 低噪声，低失真仪表放大器
| 型号： | INA163UA |
| 厂家： | 
BURR-BROWN CORPORATION |
| 描述： | Low-Noise, Low-Distortion INSTRUMENTATION AMPLIFIER |
| 文件： | 总11页 (文件大小：249K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INA163
SBOS177B – NOVEMBER 2000 – REVISED NOVEMBER 2004
Low-Noise, Low-Distortion
INSTRUMENTATION AMPLIFIER
FEATURES
DESCRIPTION
● LOW NOISE: 1nV/√Hz at 1kHz
The INA163 is a very low-noise, low-distortion, mon-
olithic instrumentation amplifier. Its current-feedback
circuitry achieves very wide bandwidth and excellent
dynamic response over a wide range of gain. It is ideal
for low-level audio signals such as balanced low-
impedance microphones. Many industrial, instrumen-
tation, and medical applications also benefit from its
low noise and wide bandwidth.
● LOW THD+N: 0.002% at 1kHz, G = 100
● WIDE BANDWIDTH: 800kHz at G = 100
● WIDE SUPPLY RANGE: ±4.5V to ±18V
● HIGH CMR: > 100dB
● GAIN SET WITH EXTERNAL RESISTOR
● SO-14 SURFACE-MOUNT PACKAGE
Unique distortion cancellation circuitry reduces distor-
tion to extremely low levels, even in high gain. The
INA163 provides near-theoretical noise performance
for 200Ω source impedance. Its differential input, low
noise, and low distortion provide superior performance
in professional microphone amplifier applications.
APPLICATIONS
● PROFESSIONAL MICROPHONE PREAMPS
● MOVING-COIL TRANSDUCER AMPLIFIERS
● DIFFERENTIAL RECEIVERS
● BRIDGE TRANSDUCER AMPLIFIERS
The INA163’s wide supply voltage, excellent output
voltage swing, and high output current drive allow its
use in high-level audio stages as well.
The INA163 is available in a space-saving SO-14
surface-mount package, specified for operation over
the –40°C to +85°C temperature range.
VO1
1
INA163
4
VIN−
6kΩ
6kΩ
Sense
A1
3
8
3kΩ
RG
A3
VO
6000
9
3kΩ
G = 1 +
RG
6kΩ
6kΩ
Ref
10
12
5
A2
VIN+
14
VO2
11
6
V+ V-
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 2000–2004, Texas Instruments Incorporated
www.ti.com
PIN CONFIGURATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
Top View
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to ob-
serve proper handling and installation procedures can
cause damage.
ESD damage can range from subtle performance deg-
radation to complete device failure. Precision integrated
circuits may be more susceptible to damage because
very small parametric changes could cause the device
not to meet its published specifications.
VO1
NC
1
2
3
4
5
6
7
14 VO2
13 NC
12 GS2
11 V+
GS1
VIN-
ABSOLUTE MAXIMUM RATINGS(1)
VIN+
V-
10 Ref
9
8
VO
Power Supply Voltage ....................................................................... ±18V
Signal Input Terminals, Voltage(2) .................. (V–) – 0.5V to (V+) + 0.5V
Current(2) .................................................... 10mA
NC
Sense
Output Short-Circuit to Ground ............................................... Continuous
Operating Temperature ..................................................–55°C to +125°C
Storage Temperature .....................................................–55°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s)............................................... +300°C
NC = No Internal Connection
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals
that can swing more than 0.5V beyond the supply rails should be current
limited to 10mA or less.
PACKAGE/ORDERING INFORMATION(1)
PACKAGE
DESIGNATOR
PACKAGE
MARKING
ORDERING
NUMBER(2)
TRANSPORT
MEDIA
PRODUCT
PACKAGE-LEAD
INA163UA
SO-14 Surface Mount
D
INA163UA
INA163
Rails
"
"
"
"
INA163UA/2K5
Tape and Reel
NOTES: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this data sheet. (2) Models with a
slash (/) are available only in Tape and Reel in the quantities indicated (e.g., /2K5 indicates 2500 devices per reel). Ordering 2500 pieces of “INA163UA/2K5” will
get a single 2500-piece Tape and Reel.
INA163
SBOS177B
2
www.ti.com
ELECTRICAL CHARACTERISTICS: VS = ±15V
TA = +25°C and at rated supplies, VS = ±15V, RL = 2kΩ connected to ground, unless otherwise noted.
INA163UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GAIN
Range
1 to 10000
G = 1 + 6k/RG
±0.1
V/V
Gain Equation(1)
Gain Error, G = 1
G = 10
±0.25
±0.7
%
%
±0.2
G = 100
±0.2
%
G = 1000
±0.5
%
Gain Temp Drift Coefficient, G = 1
G > 10
Nonlinearity, G = 1
G = 100
±1
±25
±0.0003
±0.0006
±10
±100
ppm/°C
ppm/°C
% of FS
% of FS
INPUT STAGE NOISE
Voltage Noise
fO = 1kHz
fO = 100Hz
fO = 10Hz
RSOURCE = 0Ω
1
1.2
2
nV/√Hz
nV/√Hz
nV/√Hz
Current Noise
fO = 1kHz
0.8
60
pA/√Hz
nV/√Hz
OUTPUT STAGE NOISE
Voltage Noise, fO = 1kHz
INPUT OFFSET VOLTAGE
Input Offset Voltage
vs Temperature
VCM = VOUT = 0V
A = TMIN to TMAX
VS = ±4.5V to ±18V
50 + 2000/G
1 + 20/G
1 + 50/G
250 + 5000/G
3 + 200/G
µV
µV/°C
µV/V
T
vs Power Supply
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
V
V
IN+ – VIN– = 0V
IN+ – VIN– = 0V
(V+) – 4
(V–) + 4
70
(V+) – 3
(V–) + 3
80
V
V
dB
dB
Common-Mode Rejection, G = 1
G = 100
VCM = ±11V, RSRC = 0Ω
100
116
INPUT BIAS CURRENT
Initial Bias Current
vs Temperature
Initial Offset Current
vs Temperature
2
12
1
µA
nA/°C
µA
10
0.1
0.5
nA/°C
INPUT IMPEDANCE
Differential
Common-Mode
60
60
2
2
MΩ pF
MΩ pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3dB, G = 1
3.4
G = 100
800
15
0.002
2
3.5
1
kHz
V/µs
%
µs
µs
Slew Rate
THD+Noise, f = 1kHz
Settling Time, 0.1%
0.01%
G = 100
G = 100, 10V Step
G = 100, 10V Step
50% Overdrive
Overload Recovery
µs
OUTPUT
Voltage
RL = 2kΩ to Gnd
(V+) – 2
(V–) + 2
(V+) – 1.8
(V–) + 1.8
1000
V
V
pF
mA
Load Capacitance Stability
Short-Circuit Current
Continuous-to-Common
±60
POWER SUPPLY
Rated Voltage
Voltage Range
±15
±10
V
V
mA
±4.5
±18
±12
Current, Quiescent
IO = 0mA
TEMPERATURE RANGE
Specification
Operating
–40
–40
+85
+125
°C
°C
θJA
100
°C/W
NOTE: (1) Gain accuracy is a function of external RG.
INA163
SBOS177B
3
www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = 5V, VCM = 1/2VS, RL = 25kΩ, CL = 50pF, unless otherwise noted.
GAIN vs FREQUENCY
70
THD+N vs FREQUENCY
G = 1000
0.1
0.01
VO = 5Vrms
RL = 10kΩ
60
G = 1000
50
40
G = 100
30
G = 100
20
G = 10
10
0.001
0.0001
G = 10
G = 1
0
G = 1
−10
−20
10k
100k
Frequency (Hz)
1M
10M
20
100
1k
10k 20k
Frequency (Hz)
NOISE VOLTAGE (RTI) vs FREQUENCY
CURRENT NOISE SPECTRAL DENSITY
10
1k
100
10
G = 1
1
G = 10
G = 500
G = 1000
G = 100
0.1
1
1
10
100
1k
10k
10
100
1k
10k
Frequency (Hz)
Frequency (Hz)
COMMON- MODE REJECTION vs FREQUENCY
G = 1000
POWER-SUPPLY REJECTION vs FREQUENCY
G = 100, 1000
140
120
100
80
140
120
100
80
G = 10
G = 1
G = 100
G = 10
G = 1
60
60
40
40
20
20
0
0
10
100
1k
10k
100k
1M
1
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
INA163
SBOS177B
4
www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, VS = 5V, VCM = 1/2VS, RL = 25kΩ, CL = 50pF, unless otherwise noted.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
V+
SETTLING TIME vs GAIN
10
8
20V Step
(V+) − 2
(V+) − 4
0.01%
6
(V+) − 6
(V−) + 6
4
(V−) + 4
(V−) + 2
V−
2
0.1%
0
0
10
20
30
40
50
60
1
10
100
1000
Output Current (mA)
Gain
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 100)
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 1)
10ms/div
2.5ms/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 1)
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 100)
2.5ms/div
2.5ms/div
INA163
SBOS177B
5
www.ti.com
temperature drift. These effects can be inferred from
the gain equation. Make a short, direct connection to
the gain set resistor, RG. Avoid running output signals
near these sensitive input nodes.
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for
operation. Power supplies should be bypassed with
0.1µF tantalum capacitors near the device pins. The
output Sense (pin 8) and output Reference (pin 10)
should be low-impedance connections. Resistance of
a few ohms in series with these connections will
degrade the common-mode rejection of the INA163.
NOISE PERFORMANCE
The INA163 provides very low-noise with low-source
impedance. Its 1nV/√Hz voltage noise delivers near-
theoretical noise performance with a source imped-
ance of 200Ω. The input stage design used to achieve
this low noise, results in relatively high input bias
current and input bias current noise. As a result, the
INA163 may not provide the best noise performance
with a source impedance greater than 10kΩ. For source
impedance greater than 10kΩ, other instrumentation
amplifiers may provide improved noise performance.
GAIN-SET RESISTOR
Gain is set with an external resistor, RG, as shown in
Figure 1. The two internal 3kΩ feedback resistors are
laser-trimmed to 3kΩ within approximately ±0.2%. Gain
is:
6000
G = 1+
RG
The temperature coefficient of the internal 3kΩ resis-
tors is approximately ±25ppm/°C. Accuracy and TCR
of the external RG will also contribute to gain error and
V+
0.1mF
1
11
INA163
6kΩ
6kΩ
A1
Sense
8
3kΩ
3kΩ
GAIN
(V/V)
RG
( Ω )
NC(1)
6000
1500
667
316
122
61
30
12
6
3
A3
(dB)
0
6
VO
G = 1 +
9
1
2
5
10
20
6000
RG
14
20
26
34
40
46
54
60
66
6kΩ
6kΩ
Ref
10
A2
50
100
200
500
1000
2000
14
6
0.1mF
V-
NOTE: (1) NC = No Connection.
V+
Sometimes Shown in
Simplified Form:
RG
INA163
VO
V-
FIGURE 1. Basic Circuit Connections.
INA163
SBOS177B
6
www.ti.com
INPUT CONSIDERATIONS
OFFSET VOLTAGE TRIM
Very low source impedance (less than 10Ω) can cause
the INA163 to oscillate. This depends on circuit layout,
signal source, and input cable characteristics. An input
network consisting of a small inductor and resistor, as
shown in Figure 2, can greatly reduce any tendency to
oscillate. This is especially useful if a variety of input
sources are to be connected to the INA163. Although
not shown in other figures, this network can be used as
needed with all applications shown.
A variable voltage applied to pin 10, as shown in
Figure 3, can be used to adjust the output offset voltage.
A voltage applied to pin 10 is summed with the output
signal. An op amp connected as a buffer is used to
provide a low impedance at pin 10 to assure good
common-mode rejection.
OUTPUT SENSE
An output sense terminal allows greater gain accuracy
in driving the load. By connecting the sense connection
at the load, I • R voltage loss to the load is included
inside the feedback loop. Current drive can be in-
creased by connecting a buffer amp inside the feed-
back loop, as shown in Figure 4.
V+
47Ω
11
6
4
3
VIN−
8
1.2mH
1.2mH
INA163
VO
9
12
5
10
+15V
VIN+
47Ω
V-
Sense
4
5
11
INA163
6
±250mA
Output Drive
8
FIGURE 2. Input Stabilization Network.
VO
BUF634
9
10
BW
V+
BUF634 connected
for wide bandwidth.
4
3
11
-15V
8
RG
INA163
VO
9
V+
12
5
10
6
FIGURE 4. Buffer for Increase Output Current.
100mA
150Ω
V-
OPA237
10kΩ
150Ω
100mA
V-
FIGURE 3. Offset Voltage Adjustment Circuit.
INA163
SBOS177B
7
www.ti.com
Phantom Power
+48V
+
47mF
R3
47kΩ
R1
6.8kΩ
R2
6.8kΩ
+15V
0.1mF
1N4148
(1)
C1
1
(2)
R6
5Ω
47mF
+
Female XLR
Connector
3
60V
8
A1
INA163
9
2
VO
(1)
C2
47mF
10
+
(3)
1MΩ
R7
1kΩ
60V
0.1mF
Optional DC
output control loop.
R4
2.2kΩ
R5
2.2kΩ
0.1mF
NOTES: (1) Use non- polar capacitors if phantom
power is to be turned off. (2) R6 sets maximum gain.
(3) R7 sets minimum gain.
A2
OPA134
-15V
FIGURE 5. Phantom-Powered Microphone Preamplifier.
output offset voltage in this application. With a maxi-
mum gain of 1000 (60dB), the output offset voltage can
be several volts. This may be entirely acceptable if the
output is AC-coupled into the subsequent stage. An
alternate technique is shown in Figure 5. An inexpen-
sive FET-input op amp in a feedback loop drives the
DC output voltage to 0V. A2 is not in the audio signal
path and does not affect signal quality.
MICROPHONE AMPLIFIER
Figure 5 shows a typical circuit for a professional
microphone input amplifier. R1 and R2 provide a cur-
rent path for conventional 48V phantom power source
for a remotely located microphone. An optional switch
allows phantom power to be disabled. C1 and C2 block
the phantom power voltage from the INA163 input
circuitry. Non-polarized capacitors should be used for
C1 and C2 if phantom power is to be disabled.
Gain is set with a variable resistor, R7, in series with
R6. R6 determines the maximum gain. The total resis-
tance, R6 + R7, determines the lowest gain. A special
reverse-log taper potentiometer for R7 can be used to
create a linear change (in dB) with rotation.
R4 and R5 provide a path for input bias current of the
INA163. Input offset current (typically 100nA) creates a
DC differential input voltage that will produce an output
offset voltage. This is generally the dominant source of
INA163
SBOS177B
8
www.ti.com
PACKAGE OPTION ADDENDUM
www.ti.com
9-Dec-2004
PACKAGING INFORMATION
Orderable Device
Status (1)
Package Package
Pins Package Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
Qty
Type
SOIC
SOIC
Drawing
INA163UA
ACTIVE
ACTIVE
D
D
14
14
58
None
None
CU SNPB
CU SNPB
Level-3-220C-168 HR
Level-3-220C-168 HR
INA163UA/2K5
2500
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - May not be currently available - please check http://www.ti.com/productcontent for the latest availability information and additional
product content details.
None: Not yet available Lead (Pb-Free).
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Green (RoHS & no Sb/Br): TI defines "Green" to mean "Pb-Free" and in addition, uses package materials that do not contain halogens,
including bromine (Br) or antimony (Sb) above 0.1% of total product weight.
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDECindustry standard classifications, and peak solder
temperature.
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Addendum-Page 1
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amplifier.ti.com
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logic.ti.com
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