INA163UAE4 [TI]
低噪声、低失真仪表放大器 | D | 14 | -40 to 85;
| 型号： | INA163UAE4 |
| 厂家： | 
TEXAS INSTRUMENTS |
| 描述： | 低噪声、低失真仪表放大器 | D | 14 | -40 to 85 放大器 PC 仪表 光电二极管 仪表放大器 |
| 文件： | 总16页 (文件大小：403K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INA163
SBOS177D – NOVEMBER 2000 – REVISED MAY 2005
Low-Noise, Low-Distortion
INSTRUMENTATION AMPLIFIER
FEATURES
DESCRIPTION
ꢀ LOW NOISE: 1nV/√Hz at 1kHz
The INA163 is a very low-noise, low-distortion, mon-
olithic instrumentation amplifier. Its current-feedback
circuitry achieves very wide bandwidth and excellent
dynamic response over a wide range of gain. It is ideal
for low-level audio signals such as balanced low-
impedance microphones. Many industrial, instrumen-
tation, and medical applications also benefit from its
low noise and wide bandwidth.
ꢀ LOW THD+N: 0.002% at 1kHz, G = 100
ꢀ WIDE BANDWIDTH: 800kHz at G = 100
ꢀ WIDE SUPPLY RANGE: ±4.5V to ±18V
ꢀ HIGH CMR: > 100dB
ꢀ GAIN SET WITH EXTERNAL RESISTOR
ꢀ SO-14 SURFACE-MOUNT PACKAGE
Unique distortion cancellation circuitry reduces distor-
tion to extremely low levels, even in high gain. The
INA163 provides near-theoretical noise performance
for 200Ω source impedance. Its differential input, low
noise, and low distortion provide superior performance
in professional microphone amplifier applications.
APPLICATIONS
ꢀꢀPROFESSIONAL MICROPHONE PREAMPS
ꢀ MOVING-COIL TRANSDUCER AMPLIFIERS
ꢀ DIFFERENTIAL RECEIVERS
ꢀ BRIDGE TRANSDUCER AMPLIFIERS
The INA163’s wide supply voltage, excellent output
voltage swing, and high output current drive allow its
use in high-level audio stages as well.
The INA163 is available in a space-saving SO-14
surface-mount package, specified for operation over
the –40°C to +85°C temperature range.
VO1
1
INA163
4
VIN−
6kΩ
6kΩ
Sense
A1
3
8
3kΩ
RG
A3
VO
6000
9
3kΩ
G = 1 +
RG
6kΩ
6kΩ
Ref
10
12
5
A2
VIN+
14
VO2
11
6
V+ V−
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
All trademarks are the property of their respective owners.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright © 2000–2005, Texas Instruments Incorporated
www.ti.com
PIN CONFIGURATION
ELECTROSTATIC
DISCHARGE SENSITIVITY
Top View
This integrated circuit can be damaged by ESD. Texas
Instruments recommends that all integrated circuits be
handled with appropriate precautions. Failure to ob-
serve proper handling and installation procedures can
cause damage.
ESD damage can range from subtle performance deg-
radation to complete device failure. Precision integrated
circuits may be more susceptible to damage because
very small parametric changes could cause the device
not to meet its published specifications.
VO1
NC
1
2
3
4
5
6
7
14 VO2
13 NC
12 GS2
11 V+
GS1
VIN−
VIN+
V−
ABSOLUTE MAXIMUM RATINGS(1)
10 Ref
9
8
VO
Power Supply Voltage ....................................................................... ±18V
Signal Input Terminals, Voltage(2) .................. (V–) – 0.5V to (V+) + 0.5V
Current(2) .................................................... 10mA
NC
Sense
Output Short-Circuit to Ground ............................................... Continuous
Operating Temperature ..................................................–55°C to +125°C
Storage Temperature .....................................................–55°C to +125°C
Junction Temperature .................................................................... +150°C
Lead Temperature (soldering, 10s)............................................... +300°C
NC = No Internal Connection
NOTES: (1) Stresses above these ratings may cause permanent damage.
Exposure to absolute maximum conditions for extended periods may degrade
device reliability. These are stress ratings only, and functional operation of the
device at these or any other conditions beyond those specified is not implied.
(2) Input terminals are diode-clamped to the power-supply rails. Input signals
that can swing more than 0.5V beyond the supply rails should be current
limited to 10mA or less.
PACKAGE/ORDERING INFORMATION(1)
PRODUCT
PACKAGE-LEAD
SO-14 Surface Mount
DESIGNATOR
MARKING
INA163UA
D
INA163UA
NOTE: (1) For the most current package and ordering information, see the Package Option Addendum located at the end of this document, or see the TI web site
at www.ti.com.
INA163
SBOS177D
2
www.ti.com
ELECTRICAL CHARACTERISTICS: VS = ±15V
TA = +25°C and at rated supplies, VS = ±15V, RL = 2kΩ connected to ground, unless otherwise noted.
INA163UA
PARAMETER
CONDITIONS
MIN
TYP
MAX
UNITS
GAIN
Range
1 to 10000
G = 1 + 6k/RG
±0.1
V/V
Gain Equation(1)
Gain Error, G = 1
G = 10
±0.25
±0.7
%
%
±0.2
G = 100
±0.2
%
G = 1000
±0.5
%
Gain Temp Drift Coefficient, G = 1
G > 10
Nonlinearity, G = 1
G = 100
±1
±25
±0.0003
±0.0006
±10
±100
ppm/°C
ppm/°C
% of FS
% of FS
INPUT STAGE NOISE
Voltage Noise
fO = 1kHz
fO = 100Hz
fO = 10Hz
RSOURCE = 0Ω
1
1.2
2
nV/√Hz
nV/√Hz
nV/√Hz
Current Noise
fO = 1kHz
0.8
60
pA/√Hz
nV/√Hz
OUTPUT STAGE NOISE
Voltage Noise, fO = 1kHz
INPUT OFFSET VOLTAGE
Input Offset Voltage
vs Temperature
VCM = VOUT = 0V
A = TMIN to TMAX
VS = ±4.5V to ±18V
50 + 2000/G
1 + 20/G
1 + 50/G
250 + 5000/G
3 + 200/G
µV
µV/°C
µV/V
T
vs Power Supply
INPUT VOLTAGE RANGE
Common-Mode Voltage Range
VIN+ – VIN– = 0V
VIN+ – VIN– = 0V
VCM = ±11V, RSRC = 0Ω
(V+) – 4
(V–) + 4
70
(V+) – 3
(V–) + 3
80
V
V
dB
dB
Common-Mode Rejection, G = 1
G = 100
100
116
INPUT BIAS CURRENT
Initial Bias Current
vs Temperature
Initial Offset Current
vs Temperature
2
12
1
µA
nA/°C
µA
10
0.1
0.5
nA/°C
INPUT IMPEDANCE
Differential
Common-Mode
60
60
2
2
MΩ pF
MΩ pF
DYNAMIC RESPONSE
Bandwidth, Small Signal, –3dB, G = 1
3.4
G = 100
800
15
0.002
2
3.5
1
kHz
V/µs
%
µs
µs
Slew Rate
THD+Noise, f = 1kHz
Settling Time, 0.1%
0.01%
G = 100
G = 100, 10V Step
G = 100, 10V Step
50% Overdrive
Overload Recovery
µs
OUTPUT
Voltage
RL = 2kΩ to Gnd
(V+) – 2
(V–) + 2
(V+) – 1.8
(V–) + 1.8
1000
V
V
pF
mA
Load Capacitance Stability
Short-Circuit Current
Continuous-to-Common
±60
POWER SUPPLY
Rated Voltage
Voltage Range
±15
±10
V
V
mA
±4.5
±18
±12
Current, Quiescent
IO = 0mA
TEMPERATURE RANGE
Specification
Operating
–40
–40
+85
+125
°C
°C
θJA
100
°C/W
NOTE: (1) Gain accuracy is a function of external RG.
INA163
SBOS177D
3
www.ti.com
TYPICAL CHARACTERISTICS
At TA = +25°C, VS = 5V, VCM = 1/2VS, RL = 25kΩ, CL = 50pF, unless otherwise noted.
GAIN vs FREQUENCY
70
THD+N vs FREQUENCY
G = 1000
0.1
0.01
VO = 5Vrms
RL = 10kΩ
60
G = 1000
50
40
G = 100
30
G = 100
20
G = 10
10
0.001
0.0001
G = 10
G = 1
0
G = 1
−10
−20
10k
100k
Frequency (Hz)
1M
10M
20
100
1k
10k 20k
Frequency (Hz)
NOISE VOLTAGE (RTI) vs FREQUENCY
CURRENT NOISE SPECTRAL DENSITY
10
1k
100
10
G = 1
1
G = 10
G = 500
G = 1000
G = 100
0.1
1
1
10
100
1k
10k
10
100
1k
10k
Frequency (Hz)
Frequency (Hz)
COMMON- MODE REJECTION vs FREQUENCY
G = 1000
POWER-SUPPLY REJECTION vs FREQUENCY
G = 100, 1000
140
120
100
80
140
120
100
80
G = 10
G = 1
G = 100
G = 10
G = 1
60
60
40
40
20
20
0
0
10
100
1k
10k
100k
1M
1
10
100
1k
10k
100k
1M
Frequency (Hz)
Frequency (Hz)
INA163
SBOS177D
4
www.ti.com
TYPICAL CHARACTERISTICS (Cont.)
At TA = +25°C, VS = 5V, VCM = 1/2VS, RL = 25kΩ, CL = 50pF, unless otherwise noted.
OUTPUT VOLTAGE SWING vs OUTPUT CURRENT
V+
SETTLING TIME vs GAIN
10
8
20V Step
(V+) − 2
(V+) − 4
0.01%
6
(V+) − 6
(V−) + 6
4
(V−) + 4
(V−) + 2
V−
2
0.1%
0
0
10
20
30
40
50
60
1
10
100
1000
Output Current (mA)
Gain
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 1)
SMALL-SIGNAL TRANSIENT RESPONSE
(G = 100)
2.5µs/div
10µs/div
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 1)
LARGE-SIGNAL TRANSIENT RESPONSE
(G = 100)
2.5µs/div
2.5µs/div
INA163
SBOS177D
5
www.ti.com
temperature drift. These effects can be inferred from
the gain equation. Make a short, direct connection to
the gain set resistor, RG. Avoid running output signals
near these sensitive input nodes.
APPLICATIONS INFORMATION
Figure 1 shows the basic connections required for
operation. Power supplies should be bypassed with
0.1µF tantalum capacitors near the device pins. The
output Sense (pin 8) and output Reference (pin 10)
should be low-impedance connections. Resistance of
a few ohms in series with these connections will
degrade the common-mode rejection of the INA163.
NOISE PERFORMANCE
The INA163 provides very low-noise with low-source
impedance. Its 1nV/√Hz voltage noise delivers near-
theoretical noise performance with a source imped-
ance of 200Ω. The input stage design used to achieve
this low noise, results in relatively high input bias
current and input bias current noise. As a result, the
INA163 may not provide the best noise performance
with a source impedance greater than 10kΩ. For source
impedance greater than 10kΩ, other instrumentation
amplifiers may provide improved noise performance.
GAIN-SET RESISTOR
Gain is set with an external resistor, RG, as shown in
Figure 1. The two internal 3kΩ feedback resistors are
laser-trimmed to 3kΩ within approximately ±0.2%. Gain
is:
6000
G = 1+
RG
The temperature coefficient of the internal 3kΩ resis-
tors is approximately ±25ppm/°C. Accuracy and TCR
of the external RG will also contribute to gain error and
V+
0.1µF
1
11
INA163
6kΩ
4
3
VIN−
6kΩ
A1
Sense
8
3kΩ
3kΩ
GAIN
(V/V)
RG
( Ω )
NC(1)
6000
1500
667
316
122
61
30
12
6
3
A3
(dB)
0
6
VO
G = 1 +
RG
9
1
2
5
10
20
6000
RG
14
20
26
34
40
46
54
60
66
6kΩ
6kΩ
Ref
10
12
5
A2
VIN+
50
100
200
500
1000
2000
14
6
0.1µF
V−
NOTE: (1) NC = No Connection.
V+
Sometimes Shown in
Simplified Form:
RG
INA163
VO
V−
FIGURE 1. Basic Circuit Connections.
INA163
SBOS177D
6
www.ti.com
INPUT CONSIDERATIONS
OFFSET VOLTAGE TRIM
Very low source impedance (less than 10Ω) can cause
the INA163 to oscillate. This depends on circuit layout,
signal source, and input cable characteristics. An input
network consisting of a small inductor and resistor, as
shown in Figure 2, can greatly reduce any tendency to
oscillate. This is especially useful if a variety of input
sources are to be connected to the INA163. Although
not shown in other figures, this network can be used as
needed with all applications shown.
A variable voltage applied to pin 10, as shown in
Figure 3, can be used to adjust the output offset voltage.
A voltage applied to pin 10 is summed with the output
signal. An op amp connected as a buffer is used to
provide a low impedance at pin 10 to assure good
common-mode rejection.
OUTPUT SENSE
An output sense terminal allows greater gain accuracy
in driving the load. By connecting the sense connection
at the load, I • R voltage loss to the load is included
inside the feedback loop. Current drive can be in-
creased by connecting a buffer amp inside the feed-
back loop, as shown in Figure 4.
V+
47Ω
11
6
4
3
VIN−
8
1.2µH
1.2µH
INA163
VO
9
12
5
10
+15V
VIN+
47Ω
V−
Sense
4
5
11
INA163
6
±250mA
Output Drive
8
FIGURE 2. Input Stabilization Network.
VO
BUF634
9
10
BW
V+
BUF634 connected
for wide bandwidth.
4
3
11
−15V
8
RG
INA163
VO
9
V+
12
5
10
6
FIGURE 4. Buffer for Increase Output Current.
100µA
V−
150Ω
150Ω
100µA
OPA237
10kΩ
V−
FIGURE 3. Offset Voltage Adjustment Circuit.
INA163
SBOS177D
7
www.ti.com
Phantom Power
+48V
+
47 F
R3
47k
+15V
0.1 F
R1
6.8k
R2
6.8k
1N4148
(1)
C1
1
(2)
R6
5
47 F 60V
+
Female XLR
Connector
3
8
A1
INA163
9
2
VO
(1)
C2
47 F 60V
+
10
(3)
1M
R7
1k
0.1 F
R4
2.2k
R5
2.2k
0.1 F
1N4148
A2
OPA134
NOTES: (1) Use non-polar capacitors if phantom
power is to be turned off. (2) R6 sets maximum gain.
(3) R7 sets minimum gain.
15V
Optional DC
15V
Output Control Loop
FIGURE 5. Phantom-Powered Microphone Preamplifier.
offset voltage. This is generally the dominant source of
output offset voltage in this application. With a maxi-
mum gain of 1000 (60dB), the output offset voltage can
be several volts. This may be entirely acceptable if the
output is AC-coupled into the subsequent stage. An
alternate technique is shown in Figure 5. An inexpen-
sive FET-input op amp in a feedback loop drives the
DC output voltage to 0V. A2 is not in the audio signal
path and does not affect signal quality.
MICROPHONE AMPLIFIER
Figure 5 shows a typical circuit for a professional
microphone input amplifier. R1 and R2 provide a cur-
rent path for conventional 48V phantom power source
for a remotely located microphone. An optional switch
allows phantom power to be disabled. C1 and C2 block
the phantom power voltage from the INA163 input
circuitry. Non-polarized capacitors should be used for
C1 and C2 if phantom power is to be disabled. For
additional input protection against ESD and hot-plug-
ging, four INA4148 diodes may be connected from the
input to supply lines.
Gain is set with a variable resistor, R7, in series with
R6. R6 determines the maximum gain. The total resis-
tance, R6 + R7, determines the lowest gain. A special
reverse-log taper potentiometer for R7 can be used to
create a linear change (in dB) with rotation.
R4 and R5 provide a path for input bias current of the
INA163. Input offset current (typically 100nA) creates a
DC differential input voltage that will produce an output
INA163
SBOS177D
8
www.ti.com
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jun-2023
PACKAGING INFORMATION
Orderable Device
Status Package Type Package Pins Package
Eco Plan
Lead finish/
Ball material
MSL Peak Temp
Op Temp (°C)
Device Marking
Samples
Drawing
Qty
(1)
(2)
(3)
(4/5)
(6)
INA163UA
ACTIVE
ACTIVE
SOIC
SOIC
D
D
14
14
50
RoHS & Green
NIPDAU
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 85
-40 to 85
INA163UA
Samples
Samples
INA163UA/2K5
2500 RoHS & Green
2500 RoHS & Green
NIPDAU
INA163UA
INA163UA/2K5E4
INA163UAE4
LIFEBUY
LIFEBUY
SOIC
SOIC
D
D
14
14
NIPDAU
NIPDAU
Level-3-260C-168 HR
Level-3-260C-168 HR
-40 to 85
-40 to 85
INA163UA
INA163UA
50
RoHS & Green
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5) Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com
29-Jun-2023
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
K0
P1
W
B0
Reel
Diameter
Cavity
A0
A0 Dimension designed to accommodate the component width
B0 Dimension designed to accommodate the component length
K0 Dimension designed to accommodate the component thickness
Overall width of the carrier tape
W
P1 Pitch between successive cavity centers
Reel Width (W1)
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Sprocket Holes
Q1 Q2
Q3 Q4
Q1 Q2
Q3 Q4
User Direction of Feed
Pocket Quadrants
*All dimensions are nominal
Device
Package Package Pins
Type Drawing
SPQ
Reel
Reel
A0
B0
K0
P1
W
Pin1
Diameter Width (mm) (mm) (mm) (mm) (mm) Quadrant
(mm) W1 (mm)
INA163UA/2K5
SOIC
D
14
2500
330.0
16.4
6.5
9.0
2.1
8.0
16.0
Q1
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TAPE AND REEL BOX DIMENSIONS
Width (mm)
H
W
L
*All dimensions are nominal
Device
Package Type Package Drawing Pins
SOIC 14
SPQ
Length (mm) Width (mm) Height (mm)
356.0 356.0 35.0
INA163UA/2K5
D
2500
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
3-Jun-2022
TUBE
T - Tube
height
L - Tube length
W - Tube
width
B - Alignment groove width
*All dimensions are nominal
Device
Package Name Package Type
Pins
SPQ
L (mm)
W (mm)
T (µm)
B (mm)
INA163UA
D
D
SOIC
SOIC
14
14
50
50
506.6
506.6
8
8
3940
3940
4.32
4.32
INA163UAE4
Pack Materials-Page 3
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