DMC1017UPD-13 [BCDSEMI]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET;
| 型号： | DMC1017UPD-13 |
| 厂家： | 
BCD SEMICONDUCTOR MANUFACTURING LIMITED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：627K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC1017UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI®5060-8
Product Summary
Features and Benefits
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
ID
Device
Q1
V(BR)DSS
RDS(ON)
TA = +25°C
Low RDS(ON) – Minimizes On State Losses
Low Input Capacitance
9.5A
7.8A
-6.9A
-5.4A
17mΩ @ VGS = 4.5V
25mΩ @ VGS = 2.5V
32mΩ @ VGS = -4.5V
53mΩ @ VGS = -2.5V
12V
Fast Switching Speed
Q2
-12V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize RDS(on) and yet maintain
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
Mechanical Data
Case: POWERDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (approximate)
Notebook Battery Power Management
DC-DC Converters
Loadswitch
D1
S1
D2
S1
D1
D1
D2
D2
G1
G1
G2
S2
G2
S2
Pin1
Top View
Pin Configuration
Q1 N-Channel MOSFET Q2 P-Channel MOSFET
Top View
Bottom View
Ordering Information (Note 4)
Part Number
DMC1017UPD-13
Case
POWERDI5060-8
Packaging
2500 / Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
= Manufacturer’s Marking
C1017UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
C1017UD
YY WW
WW = Week (01 - 53)
S1 G1 S2 G2
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Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Q1 Value
Q2 Value
-12
Units
12
±8
V
V
Gate-Source Voltage
±8
VGSS
Steady
State
TA = +25°C
9.5
7.6
-6.9
-5.5
A
A
ID
ID
TA = +70°C
TA = +25°C
TA = +70°C
Continuous Drain Current (Note 5) VGS = 4.5V
13.0
10.4
-9.4
-7.5
t<10s
Maximum Body Diode Forward Current
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Avalanche Current (Note 6) L = 0.1mH
Avalanche Energy (Note 6) L = 0.1mH
2
-2
A
A
IS
50
9.7
4.7
-35
-9.2
4.3
IDM
IAS
EAS
A
mJ
Thermal Characteristics
Characteristic
Symbol
Value
Units
2.3
1.5
54
TA = +25°C
Total Power Dissipation (Note 5)
W
PD
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
29
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
4.1
RθJC
-55 to +150
TJ, TSTG
Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
12
V
BVDSS
IDSS
1
VGS = 0V, ID = 250µA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
µA
nA
IGSS
100
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
0.6
1.5
17
V
mΩ
V
VGS(th)
RDS(ON)
VSD
9.6
11
VDS = VGS, ID = 250µA
VGS = 4.5V, ID = 11.8A
VGS = 2.5V, ID = 9.8A
VGS = 0V, IS = 2.9A
Static Drain-Source On-Resistance
25
Diode Forward Voltage
0.7
1.2
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1787
297
265
1.6
Ciss
Coss
Crss
RG
Qg
—
—
—
—
VDS = 6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
18.6
35.4
2.7
Qg
nC
VDS = 6V, ID = 11.8A
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
3.8
Turn-On Delay Time
6.9
Turn-On Rise Time
10.9
70.3
31.8
13.1
2.2
VDD = 6V, RL = 6Ω
nS
Turn-Off Delay Time
VGS = 4.5V, RG = 6Ω, ID = 1A
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
nS
nC
trr
IF = 11.8A, di/dt = 100A/μs
IF = 11.8A, di/dt = 100A/μs
Qrr
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
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20.0
15.0
10.0
5.0
20
18
16
14
12
10
8
V
= 8.0V
GS
V
= 5.0V
DS
V
= 4.5V
= 4.0V
GS
V
GS
V
= 3.0V
GS
V
= 2.5V
= 2.0V
GS
V
= 1.5V
GS
V
GS
6
T
A
= 150°C
A
T
= 85°C
A
4
T
= 125°C
V
= 1.3V
GS
T
A
= 25°C
A
2
V
= 1.2V
T
= -55°C
GS
0.0
0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.015
0.012
0.009
0.015
0.012
0.009
0.006
0.003
0
V
= 4.5V
GS
T
= 125°C
T
= 150°C
A
A
T
= 85°C
A
V
= 2.5V
GS
T
= 25°C
A
T
= -55°C
A
V
= 4.5V
GS
0.006
0.003
0
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT (A)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2.5
2
0.015
0.01
V
= 2.5V
= 5A
GS
I
D
V
= 4.5V
= 10A
GS
V
= 2.5V
= 5A
GS
I
D
1.5
1
I
D
V
= 4.5V
= 10A
GS
0.005
I
D
0.5
0
0
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (C)
Figure 5 On-Resistance Variation with Temperature
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1.5
20
18
16
14
12
10
8
1
I
= 1mA
D
I
= 250µA
D
0.5
T
= 85°C
= 25°C
T
= 150°C
= 125°C
A
A
6
T
T
4
A
A
2
T
= -55°C
A
0
-50 -25
0
0
0.3
0.6
0.9
1.2
1.5
0
25
50
75 100 125 150
VSD, SOURCE-DRAIN VOLTAGE (V)
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Diode Forward Voltage vs. Current
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
8
6
f = 1MHz
C
iss
1000
V
I
= 6V
DS
C
4
2
0
oss
= 11.8A
D
C
rss
100
10
0
5
10
15
20
25
30
35
40
0
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
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Electrical Characteristics Q2 P-Channel (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
V
BVDSS
IDSS
-1
VGS = 0V, ID = -250µA
µA
nA
VDS = -12V, VGS = 0V
VGS = ±8V, VDS = 0V
IGSS
100
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.6
-1.5
32
V
mΩ
V
VGS(th)
RDS(ON)
VSD
21
VDS = VGS, ID = -250µA
VGS = -4.5V, ID = -8.9A
VGS = -2.5V, ID = -6.9A
VGS = 0V, IS = -2.9A
Static Drain-Source On-Resistance
41
53
Diode Forward Voltage
-0.7
-1.2
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
Ciss
Coss
Crss
RG
Qg
—
—
—
—
2100
872
626
23.1
23.7
38.8
5.3
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Gate Resistance
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
VDS = -6V, ID = -8.9A
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Qg
nC
Qgs
Qgd
tD(on)
tr
Gate-Drain Charge
9.8
Turn-On Delay Time
10.6
25.5
144
129
48.9
15.3
Turn-On Rise Time
VDD = -6V, RL = 6Ω
nS
VGS = -4.5V, RG = 6Ω, ID = -1A
Turn-Off Delay Time
tD(off)
tf
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
nS
nC
trr
IF = -8.9A, di/dt = -100A/μs
IF = -8.9A, di/dt = -100A/μs
Qrr
Notes:
6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = 25°C.
7. Short duration pulse test used to minimize self-heating effect.
20.0
15.0
20
18
16
14
12
10
8
V
= -8.0V
V
= -5.0V
GS
DS
V
= -4.5V
= -4.0V
GS
GS
V
V
= -2.5V
GS
V
= -3.5V
GS
V
= -3.0V
GS
10.0
5.0
6
T = 85C
A
T
= 150C
A
4
T
= 25C
T
= 125C
A
A
V
= -2.0V
GS
2
T
= -55C
A
V
= -1.8V
GS
0.0
0
0
0.5
1
1.5
2
2.5
3
3.5
4
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 12 Typical Transfer Characteristics
-VDS, DRAIN -SOURCE VOLTAGE (V)
Figure 11 Typical Output Characteristics
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0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.03
0.027
0.024
V
= -4.5V
GS
T
= 150C
= 85C
A
T
= 125C
A
T
A
V
= -2.5V
GS
0.021
0.018
0.015
0.012
0.009
T
= 25C
A
T
= -55C
A
V
= -4.5V
GS
0
2
4
6
8
10 12 14 16 18 20
0
2
4
6
8
10 12 14 16 18 20
-ID, DRAIN SOURCE CURRENT (A)
-ID, DRAIN SOURCE CURRENT (A)
Figure 13Typical On-Resistance vs.
Drain Current and Gate Voltage
Figure 14 Typical On-Resistance vs.
Drain Current and Temperature
2
0.05
0.045
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
V
I
= -2.5V
GS
= -5A
D
V
I
= -4.5V
GS
= -10A
1.5
D
1
0.5
0
V
= -2.5V
GS
= -5A
V
I
= -4.5V
GS
= -10A
I
D
D
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 16 On-Resistance Variation with Temperature
Figure 15 On-Resistance Variation with Temperature
2
20
18
16
14
12
10
8
1.5
-I = 1mA
D
-I = 250µA
D
1
0.5
0
T = 150C
A
T = 85C
A
6
T = 125C
A
T = 25C
4
A
2
T = -55C
A
0
0
0.3
0.6
0.9
1.2
1.5
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 17 Gate Threshold Variation vs. Ambient Temperature
Figure 18 Diode Forward Voltage vs. Current
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10000
1000
100
8
6
4
2
f = 1MHz
C
iss
V
I
= -6V
C
DS
oss
= -8.9A
D
C
rss
0
0
2
4
6
8
10
12
0
5
10
15
20
25
30
35
40
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19 Typical Junction Capacitance
Qg, TOTAL GATE CHARGE (nC)
Figure 20 Gate-Charge Characteristics
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 104°C/W
Single Pulse
Duty Cycle, D = t1/ t2
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIMES (sec)
Figure 21 Transient Thermal Resistance
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
PowerDI5060-8
D1
Dim
Min
Max
Typ
A
A1
b
b1
b2
c
0.90
0
0.33
1.10 1.00
0.05 0.02
0.51 0.41
0( 4x)
x
c
0.300 0.366 0.333
0.20
0.23
A1
E1
E
0.35 0.25
0.33 0.277
y
Seating Plane
D
5.15 BSC
e
D1
D2
D3
E
4.85
1.40
-
4.95 4.90
1.60 1.50
1
01( 4x)
Ø1.000 Depth 0.07±0.030
-
3.98
6.15 BSC
E1
E2
e
k
k1
L
La
L1
L4
M
x
y
5.75
3.56
5.85 5.80
3.76 3.66
1.27BSC
b1( 8x)
DETAIL A
e/2
b( 8x)
1
-
-
-
1.27
-
b2( 2x)
0.56
0.51
0.51
0.05
-
3.50
-
-
D3
k
L
0.71 0.61
0.71 0.61
0.20 0.175
A
k1
L4
D2
E2
D2
M
-
0.125
DETAIL A
3.71 3.605
-
-
1.400
1.900
11°
La
L1
θ
θ1
10°
6°
12°
8°
7°
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X4
8
Value
Dimensions
(in mm)
1.270
0.660
0.820
0.610
3.910
1.650
1.650
4.420
1.270
1.020
3.810
6.610
C
G
G1
X
X1
X2
X3
X4
Y
Y1
Y2
Y3
Y1
X3
X2
Y2
Y3
G1
X1
Y( 4x)
1
G
X
C
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
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noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
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Copyright © 2014, Diodes Incorporated
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