DMC1029UFDB_15 [DIODES]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET;
| 型号： | DMC1029UFDB_15 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总9页 (文件大小：383K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC1029UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Features
Low On-Resistance
ID MAX
TA = +25°C
Device
V(BR)DSS
RDS(ON) max
Low Input Capacitance
Low Profile, 0.6mm Max Height
5.6A
5.1A
4.5A
3.7A
-3.8A
-3.3A
-2.8A
-2.3A
29mΩ @ VGS = 4.5V
34mΩ @ VGS = 2.5V
44mΩ @ VGS = 1.8V
65mΩ @ VGS = 1.5V
61mΩ @ VGS = -4.5V
81mΩ @ VGS = -2.5V
115mΩ @ VGS = -1.8V
210mΩ @ VGS = -1.5V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Q1
N-Channel
12V
Q2
P-Channel
Mechanical Data
-12V
Case: U-DFN2020-6
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe. Solderable per
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
e4
MIL-STD-202, Method 208
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Applications
Load Switch
Power Management Functions
D2
D1
Portable Power Adaptors
U-DFN2020-6
S2
G2
D2
D1
G2
G1
D1
D2
G1
S2
S1
S1
Bottom View
Pin1
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Internal Schematic
Ordering Information (Note 4)
Part Number
Case
Packaging
DMC1029UFDB -7
DMC1029UFDB -13
U-DFN2020-6
U-DFN2020-6
3000/Tape & Reel
10000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
2D = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
2D
Date Code Key
Year
2014
2015
2016
2017
2018
2019
2020
Code
B
C
D
E
F
G
H
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
DMC1029UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Q1
Q2
Characteristic
Symbol
Units
N-CHANNEL P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
12
±8
-12
±8
V
V
VDSS
VGSS
Steady
State
5.6
4.4
-3.8
-3.0
TA = +25C
TA = +70C
A
ID
Continuous Drain Current (Note 5) VGS = 4.5V
7.2
5.8
-5.0
-4.0
TA = +25C
TA = +70C
t < 5s
A
A
ID
IS
-1
Maximum Continuous Body Diode Forward Current (Note 5)
1
20
15
12
-15
-12
8
A
A
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Avalanche Current (L = 0.1mH)
IDM
IAS
Avalanche Energy (L = 0.1mH)
mJ
EAS
Thermal Characteristics
Characteristic
Symbol
Value
Units
Steady State
1.4
Total Power Dissipation (Note 5)
W
PD
t < 5s
Steady State
t < 5s
2.2
91
55
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case
20
RθJC
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Note:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
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© Diodes Incorporated
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
DMC1029UFDB
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
12
—
—
—
1.0
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
μA
nA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
±100
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.4
—
—
—
—
—
—
17
20
24
30
0.6
1
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5A
VGS = 2.5V, ID = 4.6A
VGS = 1.8V, ID = 4.1A
VGS = 1.5V, ID = 2A
VGS = 0V, IS = 1A
29
34
44
65
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
—
—
—
—
—
—
—
—
—
—
—
—
914
132
119
1.26
10.5
19.6
1.2
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Qg
VDS = 6V, ID = 6.5A
Qgs
Qgd
1.6
Gate-Drain Charge
5.0
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
10.5
16.6
4.1
Turn-On Rise Time
VDD = 6V, VGS = 4.5V,
RL = 1.2Ω, RG = 1Ω
Turn-Off Delay Time
Turn-Off Fall Time
Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-12
—
—
—
—
—
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -12V, VGS = 0V
VGS = ±8V, VDS = 0V
-1.0
±100
μA
nA
—
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.4
—
—
37
-1
61
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.6A
VGS = -2.5V, ID = -3.2A
VGS = -1.8V, ID = -1A
VGS = -1.5V, ID = -1A
VGS = 0V, IS = -1A
—
47
81
Static Drain-Source On-Resistance
—
63
115
210
-1.2
—
90
—
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
-0.65
—
—
—
—
—
—
—
—
—
—
—
—
915
225
183
56.9
10.7
17.9
1.7
—
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
nC
nC
nC
nC
ns
ns
ns
ns
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Gate-Drain Charge
Qg
VDS = -6V, ID = -4.3A
Qgs
Qgd
3.0
5.7
Turn-On Delay Time
tD(ON)
tR
tD(OFF)
tF
11.5
27.8
26.4
Turn-On Rise Time
VDD = -6V, VGS = -4.5V,
RL = 1.6Ω, RG = 1Ω
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
DMC1029UFDB
Typical Characteristics - N-CHANNEL
20
18
16
14
12
10
8
20.0
VGS=1.8V
18.0
VDS= 5.0V
VGS=1.5V
VGS=2.0V
16.0
14.0
12.0
10.0
8.0
VGS=2.5V
VGS=3.0V
VGS=4.5V
TA=150℃
TA=125℃
VGS=1.2V
VGS=8.0V
6.0
6
TA=25℃
TA=-55℃
4.0
4
TA=85℃
2.0
2
VGS=1.0V
4
0.0
0
0
1
2
3
5
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
0.05
0.04
0.03
0.02
0.01
0
0.1
0.08
0.06
0.04
0.02
0
VGS=1.5V
ID=5.0A
ID=4.1A
VGS=1.8V
VGS=2.5V
VGS=4.5V
ID=2.0A
ID=4.6A
1
3
5
7
9
11 13 15 17 19 21
1
2
3
4
5
6
7
8
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
0.03
0.025
0.02
1.8
1.6
1.4
1.2
1
VGS= 4.5V
TA=150℃
VGS=2.5V, ID=3.0A
TA=125℃
TA=85℃
0.015
0.01
TA=25℃
TA=-55℃
VGS=4.5V, ID=5.0A
0.8
0.6
0.005
-50
-25
0
25
50
75
100 125 150
0
2
4
6
8
10 12 14 16 18 20
ID, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
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DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
DMC1029UFDB
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
VGS=2.5V, ID=3.0A
ID=1mA
VGS=4.5V, ID=5.0A
ID=250μA
-50 -25
0
25
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Temperature
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
20
18
16
14
12
10
8
10000
1000
100
f=1MHz
Ciss
VGS=0V
TA=150℃
VGS=0V
TA=85℃
Coss
VGS=0V
TA=125℃
6
VGS=0V
TA=25℃
Crss
4
2
VGS=0V, TA=-55℃
0
10
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
VDS, DRAIN-SOURCE Voltage (V)
Figure 10. Typical Junction Capacitance
12
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
100
10
8
6
4
2
0
PW=1ms
PW=100μs
RDS(ON) Limited
PW=100
ms
VDS=6V, ID=6.5A
PW=1s
PW=10ms
1
TJ(Max)=150℃
TA=25℃
VGS=4.5V
Single Pulse
DUT on
PW=10s
0.1
0.01
DC
1*MRP Board
0.01
0.1
1
10
100
0
5
10
15
20
Qg (nC)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
Figure 11. Gate Charge
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DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
DMC1029UFDB
Typical Characteristics - P-CHANNEL
10.0
20
18
16
14
12
10
8
VDS=-5.0V
9.0
VGS=1.8V
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0.0
VGS=2.0V
VGS=2.5V
VGS=3.0V
VGS=4.5V
VGS=1.5V
TA=150℃
TA=125℃
6
TA=85℃
TA=25℃
VGS=8.0V
4
VGS=1.2V
2
TA=-55℃
0
0
1
2
3
4
5
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 13. Typical Output Characteristic
Figure 14. Typical Transfer Characteristic
0.1
0.5
0.45
0.4
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.35
0.3
VGS=-1.8V
ID=-3.6A
0.25
0.2
VGS=-2.5V
VGS=-4.5V
0.15
0.1
ID=-3.2A
ID=-1.0A
0.05
0
1
3
5
7
9
11 13 15 17 19 21
1
2
3
4
5
6
7
8
ID, DRAIN-SOURCE CURRENT (A)
VGS, GATE-SOURCE VOLTAGE (V)
Figure 15. Typical On-Resistance vs Drain Current
and Gate Voltage
Figure 16. Typical Transfer Characteristic
0.05
0.045
0.04
1.4
1.3
1.2
1.1
1
VGS=- 4.5V
TA=150℃
VGS=-2.5V, ID=-3.0A
TA=85℃
TA=25℃
TA=125℃
0.035
0.03
VGS=-4.5V, ID=-5.0A
0.9
0.8
0.7
0.6
TA=-55℃
0.025
0.02
-50 -25
0
25
50
75 100 125 150
1
3
5
7
9
11 13 15 17 19 21
ID, DRAIN CURRENT (A)
Figure 17. Typical On-Resistance vs Drain Current
and Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 18. On-Resistance Variation with
Temperature
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DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
DMC1029UFDB
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.07
0.06
0.05
0.04
0.03
0.02
VGS=-2.5V, ID=-3.0A
ID=-1mA
ID=-250µA
VGS=-4.5V, ID=-5.0A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 19. On-Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 20. Gate Theshold Variation vs Junction
Temperature
20
18
16
14
12
10
8
10000
f=1MHz
VGS=0V
Ciss
1000
100
10
Coss
TA=150℃
Crss
TA=125℃
TA=25℃
TA=85℃
6
4
TA=-55℃
2
0
0
2
4
6
8
10
12
0
0.3
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 21. Diode Forward Voltage vs. Current
0.6
0.9
1.2
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 22. Typical Junction Capacitance
100
10
8
6
4
2
0
PW=100µs
RDS(ON)
Limited
PW=1ms
PW=10ms
VDS=-6V, ID=-4.3A
PW=100ms
1
PW=1s
TJ(Max)=150℃
TA=25℃
VGS=4.5V
Single Pulse
0.1
0.01
PW=10s
DC
DUT on 1*MRP Board
0
5
10
15
20
0.01 0.1
1
10
100
Qg (nC)
Figure 23. Gate Charge
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 24. SOA, Safe Operation Area
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DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
DMC1029UFDB
1
D=0.9
D=0.7
D=0.5
0.1
D=0.3
D=0.1
D=0.05
D=0.02
D=0.01
D=0.005
D=Single Pulse
0.01
RθJA(t)=r(t) * RθJA
RθJA=171℃/W
Duty Cycle, D=t1/ t2
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 25. Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
U-DFN2020-6
Type B
A
A3
SEATING PLANE
Dim
A
Min
Max Typ
A1
0.545 0.605 0.575
A1
A3
b
0
0.05 0.02
0.13
D
Pin#1 ID
0.20 0.30 0.25
D2
D
d
D2
e
1.95 2.075 2.00
z
0.45
0.50 0.70 0.60
0.65
d
E
E2
E
1.95 2.075 2.00
f
f
E2
f
L
0.90 1.10 1.00
0.15
0.25 0.35 0.30
0.225
L
z
e
b
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
Dimensions Value (in mm)
G
X2
Z
G
G1
X1
X2
Y
1.67
0.20
0.40
1.0
0.45
0.37
0.70
0.65
G1
X1
Y1
C
G
Y1
Z
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DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
DMC1029UFDB
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
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failure of the life support device or to affect its safety or effectiveness.
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February 2015
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DMC1029UFDB
Document number: DS37710 Rev. 2 - 2
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