DMC1028UFDB-7 [DIODES]
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET;
| 型号： | DMC1028UFDB-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET |
| 文件： | 总10页 (文件大小：666K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMC1028UFDB
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Features
Product Summary
Low On-Resistance
ID max
TA = +25°C
Device
BVDSS
RDS(ON) max
Low Input Capacitance
Low Profile, 0.6mm Max Height
6.0A
5.5A
5.3A
-3.4A
-3.2A
-3.0A
25mΩ @ VGS = 4.5V
30mΩ @ VGS = 3.3V
32mΩ @ VGS = 2.5V
80mΩ @ VGS = -4.5V
90mΩ @ VGS = -3.3V
100mΩ @ VGS = -2.5V
Q1
N-Channel
12V
ESD HBM Protected up to 1.5KV, MM Protected up to 150V.
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Q2
P-Channel
-20V
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case: U-DFN2020-6 (Type B)
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe.
Applications
e4
Solderable per MIL-STD-202, Method 208
Optimized for Point of Load (POL) Synchronous Buck Converter that
steps down from 3.3V to 1V for core voltage supply to ASICs. Target
applications are Ethernet Network Controllers used in:
Terminals Connections: See Diagram Below
Weight: 0.0065 grams (Approximate)
Routers, Switchers, Network Interface Controllers (NICs)
Digital Subscriber Line (DSL)
Set-Top Boxes (STBs)
D1
D2
S2
U-DFN2020-6 (Type B)
S2
G2
D2
G1
G2
D1
D1
D2
Gate Protection
Diode
ESD PROTECTED
Gate Protection
Diode
G1
S1
S1
Bottom View
N-CHANNEL MOSFET
P-CHANNEL MOSFET
Pin1
Internal Schematic
Ordering Information (Note 4)
Part Number
DMC1028UFDB-7
DMC1028UFDB-13
Case
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
U-DFN2020-6 (Type B)
U-DFN2020-6 (Type B)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
D8 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: C = 2015)
D8
M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
Code
C
D
E
F
G
H
I
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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© Diodes Incorporated
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
DMC1028UFDB
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Q1
Q2
Characteristic
Symbol
Units
N-CHANNEL P-CHANNEL
Drain-Source Voltage
Gate-Source Voltage
12
±8
-20
±8
V
V
VDSS
VGSS
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
6.0
4.8
-3.4
-2.7
A
A
ID
ID
Continuous Drain Current (Note 5) VGS = 4.5V
7.1
5.7
-4.0
-3.2
t < 5s
-1.4
-20
-12
7.5
Maximum Continuous Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
Avalanche Current L = 0.1mH
1.4
40
A
A
IS
IDM
IAS
12
A
Avalanche Energy L = 0.1mH
8.4
mJ
EAS
Thermal Characteristics
Characteristic
Symbol
Value
Units
Steady State
1.36
1.89
92
66
19
Total Power Dissipation (Note 5)
W
PD
t < 5s
Steady State
t < 5s
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
°C/W
°C
Thermal Resistance, Junction to Case (Note 5)
Operating and Storage Temperature Range
RθJC
-55 to +150
TJ, TSTG
Note:
5. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
Electrical Characteristics Q1 N-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
12
-
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±8V, VDS = 0V
1.0
±10
μA
μA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
-
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
0.4
-
1
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 5.2A
VGS = 3.3V, ID = 5.0A
VGS = 2.5V, ID = 4.8A
VGS = 1.8V, ID = 2.5A
VGS = 0V, IS = 1A
-
-
-
-
-
17
19
21
30
0.7
25
30
32
40
1.2
Static Drain-Source On-Resistance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
787
203
177
4.8
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = 6V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 0V, VGS = 0V, f = 1MHz
7.9
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = 3.3V)
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
10.5
18.5
1.2
Qg
VDS = 6V, ID = 6.8A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
2.9
Turn-On Delay Time
4.6
Turn-On Rise Time
9.4
VDD = 6V, VGS = 4.5V,
RL = 1.1Ω, RG = 1Ω
Turn-Off Delay Time
15.7
3.7
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
12.0
1.8
tRR
IS = 5.4A, dI/dt = 100A/μs
IS = 5.4A, dI/dt = 100A/μs
QRR
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© Diodes Incorporated
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
DMC1028UFDB
Electrical Characteristics Q2 P-CHANNEL (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
-20
-
-
-
-
V
BVDSS
IDSS
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
-
-
-1.0
±10
μA
μA
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
IGSS
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
-0.4
-
-1
V
mΩ
V
VGS(TH)
RDS(ON)
VSD
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -3.8A
VGS = -3.3V, ID = -3.5A
VGS = -2.5V, ID = -3.3A
VGS = -1.8V, ID = -1.0A
VGS = -1.5V, ID = -0.5A
VGS = 0V, IS = -1A
-
-
-
-
-
-
55
80
63
90
Static Drain-Source On-Resistance
70
100
140
210
-1.2
88
110
-0.7
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
576
87
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
pF
pF
pF
Ω
Ciss
Coss
Crss
Rg
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
71
15
VDS = 0V, VGS = 0V, f = 1MHz
5.2
6.7
11.5
1.0
2.0
3.5
3.6
20.8
12.7
13.1
3.9
nC
nC
nC
nC
nC
ns
ns
ns
ns
ns
nC
Total Gate Charge (VGS = -3.3V)
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -8V)
Gate-Source Charge
Qg
VDS = -10V, ID = -4.9A
Qgs
Qgd
tD(ON)
tR
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
VDD = -10V, VGS = -4.5V,
RL = 2.6Ω, RG = 1Ω
Turn-Off Delay Time
tD(OFF)
tF
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
tRR
IS = -3.9A, dI/dt = 100A/μs
IS = -3.9A, dI/dt = 100A/μs
QRR
Notes:
6. Short duration pulse test used to minimize self-heating effect.
7. Guaranteed by design. Not subject to product testing.
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© Diodes Incorporated
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
DMC1028UFDB
Typical Characteristics - N-CHANNEL
15
12
9
20.0
VDS= 5V
18.0
16.0
14.0
12.0
10.0
8.0
VGS = 4.5V
VGS = 1.8V
VGS = 3.5V
VGS = 3.0V
TA = 125oC
VGS = 2.5V
TA = -55oC
VGS = 1.5V
6
VGS = 2.0V
6.0
TA = 25oC
TA = 85oC
TA = 150oC
3
4.0
VGS = 1.2V
VGS = 1.1V
2.0
0
0.0
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0.05
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
0.045
0.04
V
= 1.8V
GS
0.035
0.03
V
= 2.5V
0.025
0.02
GS
ID = 2.5A
ID = 4.8A
0.015
0.01
V
= 3.3V
GS
V
= 4.5V
GS
0.005
ID = 5.2A
6
0
1
2
3
4
5
7
8
0
2
4
6
8
10 12 14 16 18 20
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1
0.03
0.025
0.02
VGS= 4.5V
TA = 150oC
TA = 125oC
VGS = 4.5V, ID = 10A
TA = 85oC
TA = 25oC
TA = -55oC
0.015
0.01
VGS = 1.8V, ID = 3A
0.8
0.6
0.005
-50 -25
0
25
50
75 100 125 150
0
2
4
6
8
10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE (℃)
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs Drain Current
and Temperature
Figure 6 On-Resistance Variation with
Temperature
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DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
DMC1028UFDB
Typical Characteristics - N-CHANNEL (continued)
0.05
0.045
0.04
1.2
1.1
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
VGS = 1.8V, ID = 3A
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
ID = 1mA
ID = 250µA
VGS = 4.5V, ID = 10A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7 On-Resistance Variation with Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 8 Gate Theshold Variation vs Junction
Temperature
10000
1000
100
20
f=1MHz
18
16
14
12
10
8
VGS = 0V
Ciss
TA = 125oC
Coss
TA = -55oC
Crss
TA = 25oC
TA = 150oC
6
4
TA = 85oC
2
0
10
100
10
0
0.3
0.6
0.9
1.2
1.5
0
2
4
6
8
10
12
VSD, SOURCE-DRAIN VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
Figure 9 Diode Forward Voltage vs. Current
8
6
4
2
0
RDS(ON)
Limited
DC
1
PW =10s
PW =1s
VDS = 6V, ID = 6.8A
PW =100ms
TJ(Max)=150℃
TA=25℃
VGS=4.5V
Single Pulse
DUT on 1*MRP Board
0.1
PW =10ms
PW =1ms
PW =100µs
0.01
0.01
0
2
4
6
8
10 12 14 16 18 20
Qg (nC)
Fiure 11 Gate Charge
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
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DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
DMC1028UFDB
Typical Characteristics - P-CHANNEL
20.0
10
8
VGS = -4.5V
VGS = -3.0V
18.0
16.0
14.0
12.0
10.0
8.0
VDS = -5V
VGS = -3.5V
VGS = -2.5V
VGS = -2.0V
6
VGS = -1.8V
4
TA = 125oC
TA = 150oC
6.0
VGS = -1.5V
VGS = -1.2V
TA = -55oC
TA = 25oC
TA = 85oC
1.5
2
4.0
2.0
0
0.0
0
0.5
1
2
2.5
3
0
1
2
3
VGS, GATE-SOURCE VOLTAGE (V)
Figure 14 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 13 Typical Output Characteristic
0.3
0.3
V
= -1.5V
GS
0.25
0.2
0.25
0.2
0.15
0.1
0.05
0
ID = -3.8A
ID = -3.3A
V
= -1.8V
GS
0.15
0.1
V
= -2.5V
GS
ID = -1.0A
0.05
0
V
= -4.5V
V
= -3.3V
GS
GS
0
2
4
6
8
1
3
5
7
9
11 13 15 17 19 21
VGS, GATE-SOURCE VOLTAGE (V)
Figure 16 Typical Transfer Characteristic
ID, DRAIN-SOURCE CURRENT (A)
Figure 15 Typical On-Resistance vs.
Drain Current and Gate Voltage
1.8
1.6
1.4
1.2
1
0.12
VGS= -4.5V
TA = 125oC
0.1
0.08
0.06
0.04
0.02
TA = 150oC
VGS = -4.5V, ID = -5.0A
TA = 85oC
TA = 25oC
VGS = -1.8V, ID = -1.0A
TA = -55oC
0.8
0.6
1
3
5
7
9
11 13 15 17 19 21
-50 -25
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
TJ, JUNCTION TEMPERATURE (℃)
Figure 18 On-Resistance Variation with
Temperature
Figure 17 Typical On-Resistance vs Drain
Current and Temperature
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DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
DMC1028UFDB
Typical Characteristics - P-CHANNEL (continued)
0.14
1
0.8
0.6
0.4
0.2
0
0.12
VGS = -1.8V, ID = -1.0A
0.1
ID = -1mA
0.08
0.06
ID = -250µA
0.04
0.02
0
VGS = -4.5V, ID = -5.0A
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 19 On-Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (℃)
Figure 20 Gate Theshold Variation vs Junction
Temperature
10000
1000
100
20
18
16
14
12
10
8
f=1MHz
VGS = 0V
Ciss
TA = 150oC
Coss
TA = 125oC
TA = 85oC
6
TA = 25oC
TA = -55oC
Crss
4
2
10
0
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 22 Typical Junction Capacitance
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 21 Diode Forward Voltage vs. Current
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DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
100
10
8
6
4
2
0
RDS(ON)
Limited
PW =100ms
1
DC
PW =10s
PW =1s
VDS = -10V, ID = -4.9A
TJ(Max)=150℃
TA=25℃
VGS=4.5V
Single Pulse
DUT on 1*MRP Board
0.1
0.01
PW =10ms
PW =1ms
PW =100µs
10
0.1
1
100
0
2
4
6
8
10
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 24 SOA, Safe Operation Area
Qg (nC)
Figure 23 Gate Charge
Typical Characteristics - P-CHANNEL (cont.)
1
D=0.5
D=0.3
D=0.9
D=0.7
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
RθJA(t)=r(t) * RθJA
RθJA=166℃/W
Duty Cycle, D=t1/t2
D=Single Pulse
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 25 Transient Thermal Resistance
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DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
DMC1028UFDB
Typical Application Circuit
DMC1028UFDB is designed for Point-of-Load (POL) converter that is stepping down from a nominal 3.3V to 1V with a load current up to 3A. This
is implemented with a separate ASIC that is PWM signaling the complementary MOSFETs to act as a synchronous buck converter. The control
switch (Q2) is implemented with P-channel MOSFETs to avoid needing a charge pump and with the 3.3V to 1V step down, which has a duty cycle
of 33%. This means that for 67% of the cycle, the synchronous switch (Q1) is on and efficiency is dominated by the conduction losses; hence, the
need for low RDS(on) N-channel MOSFETs. Whereas for the control switch (Q2), the gate charge needs to be minimized as the switching losses
become significant.
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
U-DFN2020-6
A
A3
Type B
Min Max Typ
0.545 0.605 0.575
SEATING PLANE
Dim
A
A1
A1
A3
b
0
0.05 0.02
0.13
D
Pin#1 ID
0.20 0.30 0.25
D2
D
d
D2
e
1.95 2.075 2.00
z
0.45
0.50 0.70 0.60
0.65
d
E
E2
E
1.95 2.075 2.00
f
f
E2
f
L
0.90 1.10 1.00
0.15
0.25 0.35 0.30
0.225
L
z
e
b
All Dimensions in mm
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© Diodes Incorporated
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
DMC1028UFDB
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
C
Y
G
X2
Dimensions Value (in mm)
Z
G
G1
X1
X2
Y
1.67
0.20
0.40
1.0
0.45
0.37
0.70
0.65
G1
X1
G
Y1
C
Y1
Z
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
10 of 10
www.diodes.com
May 2015
© Diodes Incorporated
DMC1028UFDB
Document number: DS37634 Rev. 4 - 2
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