BA-3E12UW [BRTLED]

hi-eff red chips, which are made from GaAsP on GaP substrate; HI- EFF红筹股,这是对的GaP衬底制成的磷砷化镓
BA-3E12UW
型号: BA-3E12UW
厂家: BRTLED    BRTLED
描述:

hi-eff red chips, which are made from GaAsP on GaP substrate
HI- EFF红筹股,这是对的GaP衬底制成的磷砷化镓

文件: 总3页 (文件大小:179K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3E12UW  
Package Dimensions :  
Features :  
19.80(.780)  
1. Emitting area : 18.78×5.85mm)  
2. Low power requirement.  
0.50(.020)  
6.80(.268)  
2.20(.087)  
3. Excellent characters appearance.  
4. Solid state reliability.  
6.40(.252)  
5. Categorized for luminous intensity.  
3.00(.118) MIN.  
2.54(.100)  
0.5(.020)  
12.70(.50)  
Description :  
1. The BA-3E12UW had uniform  
emitting light.  
2. This product use hi-eff red chips,  
which are made from GaAsP on  
GaP substrate.  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. Specifications are subject to change without  
notice.  
3. This product have a white face and  
white segments.  
4.  
This product doesn't contain restriction  
substance, comply ROHS standard.  
Internal Circuit Diagram :  
佰鴻工業股份有限公司  
http://www.brtled.com  
Ver.1.0 Page 1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3E12UW  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Power Dissipation Per Segment  
Forward Current Per Segment  
Peak Forward Current Per Segment  
Pd  
80  
IF  
30  
150  
IFP  
(Duty 1/10, 1KHZ)  
Reverse Voltage Per Segment  
Operating Temperature  
Storage Temperature  
VR  
5
-40~80℃  
-40~85℃  
260For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
Electrical And Optical Characteristics(Ta=25)  
Parameter  
Symbol Condition Min.  
Typ.  
1.9  
9.0  
-
Max.  
Unit  
V
Forward Voltage Per Segment  
Luminous Intensity Per Segment  
Reverse Current Per Segment  
Peak Wave Length  
Vf  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
-
-
-
2.5  
-
100  
-
mcd  
µA  
IR  
λp  
IF=10mA  
640  
nm  
nm  
nm  
佰鴻工業股份有限公司  
-
λd  
Dominant Wave Length  
IF=10mA  
626  
-
636  
λ  
http://www.brtled.com  
Spectral Line Half-width  
IF=10mA  
-
40  
Ver.1.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BA-3E12UW  
Typical Electro-Optical Characteristics Curves  
(25Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
560  
590  
620  
650  
680  
710  
740  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
0
1
2
3
4
5
-40 -20  
0
20  
40  
60  
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
3.0  
佰鴻工業股份有限公司  
40  
2.0  
30  
20  
http://www.brtled.com  
1.0  
10  
0
0.0  
0
20 40 60 80 100 120  
0
10  
20  
30  
40  
50  
Forward Current(mA)  
Ambient Temperature Ta( C)  
Ver.1.0 Page 3 of 3  

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