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BD-E323RD [BRTLED]

yellow chips, which are made from GaAsP on GaP substrate.; 黄色的芯片，这是对的GaP衬底制成的砷化镓。
BD-E323RD
型号： BD-E323RD
厂家： BRTLED    BRTLED
描述：

yellow chips, which are made from GaAsP on GaP substrate.
黄色的芯片，这是对的GaP衬底制成的砷化镓。
文件： 总3页 (文件大小：249K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E323RD  
●
Package Dimensions :  
●
Features :  
15.0(.591)  
1. 0.36 inch (9.20mm) Digit Height.  
2. Continuous uniform segments.  
3. Low power requirement.  
4.8(.189)  
9.2(.362)  
14.0(.551)  
10.16(.400)  
4. Excellent characters appearance.  
5. Solid state reliability.  
1.0(.039)  
7.5(.295)  
6. Categorized for luminous intensity.  
7. Duplex drive common anode.  
7.2(.283)  
3.0(.118) MIN.  
●
Description :  
2.54x4=10.16(.400)  
1. The BD-E323RD is a 9.20mm (0.36")  
high dual digit seven segments display.  
2. This product use yellow chips, which  
are made from GaAsP on GaP substrate.  
3. This product have a black face and  
Notes:  
1. All dimensions are in millimeters(inches).  
2. Tolerance is ±0.25mm(.01")unless otherwise  
specified.  
3. Specifications are subject to change without  
notice.  
white segments.  
4. This product doesn't contain restriction  
substance, comply ROHS standard.  
● Internal Circuit Diagram :  
10  
5
D.1  
D.2  
D1  
D2  
A
F
佰鴻工業股份有限公司  
B
G
E
C
D
DP  
A
B
C
D
E
F
G
DP  
8
6
7
4
http://www.brtled.com  
1
2
3
9
PIN 1.  
Ver.1Page 1 of 3  
1.1  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E323RD  
● Absolute Maximum Ratings(Ta=25℃)  
Parameter  
Symbol  
Rating  
Unit  
mW  
mA  
mA  
V
Power Dissipation Per Segment  
Forward Current Per Segment  
Peak Forward Current Per Segment  
Pd  
80  
IF  
30  
150  
IFP  
(Duty 1/10, 1KHZ)  
VR  
Reverse Voltage Per Segment  
Operating Temperature  
Storage Temperature  
5
-40℃~80℃  
-40℃~85℃  
260℃ For 5 Seconds  
Topr  
Tstg  
Tsol  
-
-
Soldering Temperature  
(1/16" From Body)  
-
● Electrical And Optical Characteristics(Ta=25℃)  
Parameter  
Symbol Condition Min.  
Typ.  
2.0  
2.0  
-
Max.  
2.5  
-
Unit  
V
Forward Voltage Per Segment  
Luminous Intensity Per Segment  
Reverse Current Per Segment  
Peak Wave Length  
Vf  
Iv  
IF=10mA  
IF=10mA  
VR=5V  
-
-
mcd  
µA  
IR  
-
-
100  
-
λp  
λd  
IF=10mA  
IF=10mA  
585  
-
nm  
nm  
nm  
Dominant Wave Length  
587  
594  
佰鴻工業股份有限公司  
∆λ  
Spectral Line Half-width  
IF=10mA  
-
35  
-
http://www.brtled.com  
Ver.1.0 Page 2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BD-E323RD  
● Typical Electro-Optical Characteristics Curves  
(25℃ Ambient Temperature Unless Otherwise Noted)  
Fig.1 Relative Radiant Intensity VS. Wavelength  
1.0  
0.5  
0
500  
530  
560  
590  
620  
650  
680  
Wavelength(nm)  
Fig.3 Relative Luminous  
Intensity VS.  
Fig.2 Forward Current VS.  
Forward Voltage  
Ambient Temperature  
50  
40  
30  
20  
10  
0
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0
-40 -20  
0
20  
40  
60  
1
2
3
4
5
Ambient Temperature Ta( C)  
Forward Voltage (V)  
Fig.4 Relative Luminous  
Intensity VS.  
Fig.5 Forward Current  
Derating Curve VS.  
Ambient Temperature  
Forward Current  
50  
40  
3.0  
佰鴻工業股份有限公司  
2.0  
30  
20  
http://www.brtled.com  
1.0  
10  
0
0
20 40 60 80 100 120  
Ambient Temperature Ta( C)  
10  
20  
30  
40  
50  
Forward Current(mA)  
Ver.1.0 Page 3 of 3  

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