BPT-NP13C2 [BRTLED]

SIDE- LOOK PACKAGE PHOTOTRANSISTOR; 副作用LOOK包装PHOTOTRANSISTOR
BPT-NP13C2
型号: BPT-NP13C2
厂家: BRTLED    BRTLED
描述:

SIDE- LOOK PACKAGE PHOTOTRANSISTOR
副作用LOOK包装PHOTOTRANSISTOR

光电
文件: 总3页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-NP13C2  
SIDE- LOOK PACKAGE  
PHOTOTRANSISTOR  
Features  
Package Dimensions:  
1. Wide range of collector current.  
2. Lend for high sensitivity.  
3. Low cost plastic package.  
1.7(.067)  
2.5(.098)  
3.8(.150)  
4.0(.157)  
4. Lens Appearance: Water Clear.  
4.6(.181)  
1.5(.059)  
5. This product doesn't contain restriction  
1.6(.063)  
substance, comply ROHS standard  
4.5(.177)  
2.9(.114)  
1.8(.071)  
0.65(.026)  
14.0(.551) MIN.  
Description  
0.5(.020)  
The BPT-NP13C2 is a NPN silicon phototransistor  
mounted in a lensed ,water clear plastic package .  
The lensing effect of the package allows an  
acceptance half view angle of 50that is  
measured from the optical axis to the half  
power point .  
1
2
0(.039) MIN.  
0.5(.019)  
2.54(.100)  
1. Emitter  
2. Collector  
NOTES:  
1.All dimensions are in millimeters (inches).  
2.Tolerance is ±0.25mm (0.01’’) unless otherwise specified.  
3.Lead spacing is measured where the leads emerge from the package  
4.Specifications are subject to change without notice  
Absolute Maximum Ratings(Ta=25)  
Parameter  
Power Dissipation  
Maximum Rating  
Unit  
mW  
V
100  
30  
5
Collector- Emitter Voltage  
Emitter- Collector Voltage  
Operating Temperature  
V
-45~+85℃  
Storage Temperature Range  
Lead Soldering Temperature  
-45~+100℃  
260for 5 seconds  
Rev:1. 0 Page1 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-NP13C2  
Electrical Characteristics (TA=25unless otherwise noted)  
PARAMETER  
Collector- Emitter  
Breakdown Voltage  
Emitter-Collector  
Breakdown Voltage  
Collector- Emitter  
Saturation Voltage  
SYMBOL MIN  
TYP  
MAX  
UNITS  
TEST CONDITIONS  
V(BR)CEO  
V(BR)ECO  
VCE(SAT)  
Tr  
30  
5
-
-
V
IC=1 mA Ee=0mW/cm2  
-
-
V
V
IR=0.1mA Ee=0 mW/cm2  
-
-
-
0.5  
-
IC=0.1 mA Ee=1.0mW/cm2  
Rise Time  
25  
VCE =5V RL=1K  
μS  
F=100HZ  
Fall Time  
Tf  
Id  
-
-
-
25  
-
-
100  
-
Collector Dark Current  
Light Current  
nA  
VCE=10V Ee=0 mW/cm2  
VCE=5V Ee=1.0mW/cm2  
IC (ON)  
11  
mA  
Typical Optical-Electrical Characteristic Curves  
FIG.2 Power Dissipation Vs.  
Ambient Temperature  
FIG.1 Dark Current Vs.  
(uA)  
Ambient Temperature  
(mW)  
120  
10000  
100  
1000  
100  
10  
80  
60  
1
40  
20  
0.1  
0.01  
0
(°C)  
0
20  
60 80 100 120  
-25  
0
25  
50 75 100 125(°C)  
40  
Ambient Temperature  
Ambient Temperature  
FIG.3 Rise And Fall Time Vs.  
Load Resistance  
FIG.4 Relative Collector Current Vs.  
Irradiance  
(us)  
20  
Vcc=5V  
2.5  
2.0  
1.5  
1.0  
0.5  
0
Vce=5V  
F=100Hz  
16  
Tf  
12  
8
Tr  
4
(mW/cm2)  
0.5  
0
1.5 2.0 2.5 3.0  
Irradiance  
1.0  
0
0.2  
(K )  
1.0  
0
0.4  
0.6  
0.8  
Load Resistance  
Rev:1.0  
Page2 of 3  
BRIGHT LED ELECTRONICS CORP.  
SINCE 1981  
BPT-NP13C2  
Tapping and packaging specifications(Units: mm)  
Packaging Bag Dimensions  
Notes:  
11000pcs per bag, 8Kpcs per box.  
2All dimensions are in millimeters(inches).  
3Specifications are subject to change without notice.  
Rev:1.0  
Page3 of 3  

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