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元器件品牌
NE5520379A-T1A
[CEL]
暂无描述;
元器件型号:
NE5520379A-T1A
生产厂家:
CALIFORNIA EASTERN LABS
描述和应用:
暂无描述
PDF文件:
总9页 (文件大小:392K)
下载文档:
下载PDF数据表文档文件
型号参数:NE5520379A-T1A参数
查看货源
NE5520379A-T1A-A
NECs 3.2V, 3W, L/S BAND MEDIUM POWER SILICON LD-MOSFET
Warning
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on line
156
-
75
CEL
NE5521
LVDT signal conditioner
Warning
: Undefined variable $rtag in
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on line
156
-
338
PHILIPS
NE5521D
LVDT signal conditioner
Warning
: Undefined variable $rtag in
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on line
156
-
177
PHILIPS
NE5521D-T
LVDT Conditioner
Warning
: Undefined variable $rtag in
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156
-
136
ETC
NE5521F
IC SIGNAL CONDITIONER, CDIP18, CERDIP-18, Position Converter
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156
-
0
PHILIPS
NE5521N
LVDT signal conditioner
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156
-
167
PHILIPS
NE552R479A
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
Warning
: Undefined variable $rtag in
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67
CEL
NE552R479A-T1
S BAND, Si, N-CHANNEL, RF POWER, MOSFET, 79A, 4 PIN
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0
RENESAS
NE552R479A-T1
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
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0
NEC
NE552R479A-T1A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
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156
-
0
NEC
NE552R479A-T1A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
NEC
NE552R479A-T1A-A
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
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36
CEL
NE552R479A-T1A-A
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 79A, 4 PIN
Warning
: Undefined variable $rtag in
/www/wwwroot/www.icpdf.com/pdf/pdf/index.php
on line
156
-
0
NEC
NE552R679A
Discrete
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156
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35
ETC
NE552R679A
3.0 V OPERATION SILICON RF POWER LD-MOS FET FOR 460 MHz 0.6 W TRANSMISSION AMPLIFIERS
Warning
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22
NEC
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