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NE6500379A-T1 [CEL]

3W, L/S-BAND MEDIUM POWER GaAs MESFET; 3W ， L / S波段中功率的GaAs MESFET

NE6500379A-T1


元器件型号：	NE6500379A-T1
生产厂家：	CALIFORNIA EASTERN LABS
描述和应用：	3W, L/S-BAND MEDIUM POWER GaAs MESFET 3W ， L / S波段中功率的GaAs MESFET
PDF文件：	总7页 (文件大小：162K)
下载文档：	下载PDF数据表文档文件
型号参数：NE6500379A-T1参数

NE6500379A-T1-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, 79A, 4 PIN

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0 NEC

NE6500496

4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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40 NEC

NE6500496

RF Power Field-Effect Transistor, S Band, Gallium Arsenide, N-Channel,

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0 NEC

NE6500496_00

L&S BAND MEDIUM POWER GaAs MESFET

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20 NEC

NE6500496-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET,

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0 NEC

NE650103M

10 W L & S-BAND POWER GaAs MESFET

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25 CEL

NE650103M

NECS 10 W L & S-BAND POWER GaAs MESFET

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21 ETC

NE650103M

NECS 10 W L & S-BAND POWER GaAs MESFET

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9 ETC

NE650103M-A

10 W L & S-BAND POWER GaAs MESFET

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32 CEL

NE6501077

10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

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38 NEC

NE6501077_00

L/S BAND MEDIUM POWER GaAs MESFET

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18 CEL

NE6501077-A

RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

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0 NEC

NE650N-A

Dolby Noise Reduction IC, PDIP16

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1 PHILIPS

NE650N-B

Dolby Noise Reduction IC, PDIP16

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0 PHILIPS

NE650NSIIA

Dolby Noise Reduction IC, PDIP16

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0 PHILIPS

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