BCX70KTR [CENTRAL]
暂无描述;型号: | BCX70KTR |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | 暂无描述 晶体 小信号双极晶体管 光电二极管 |
文件: | 总2页 (文件大小:324K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BCX70 SERIES
www.centralsemi.com
SURFACE MOUNT
NPN SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCX70 Series
types are NPN Silicon Transistors manufactured
by the epitaxial planar process, epoxy molded in a
surface mount package, designed for general purpose
switching and amplifier applications.
MARKING CODES: BCX70G: AG
BCX70H: AH
BCX70J: AJ
BCX70K: AK
SOT-23 CASE
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
V
A
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
V
V
V
45
45
5.0
100
200
CBO
CEO
EBO
C
CM
V
I
mA
mA
mA
mW
°C
I
I
200
350
BM
P
D
T , T
-65 to +150
357
J
stg
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
nA
μA
nA
V
V
V
V
V
V
V
V
MHz
pF
pF
I
I
I
V
V
V
=45V
=45V, T =150°C
=4.0V
20
20
20
CBO
CBO
EBO
CBO
CEO
CB
CB
EB
A
BV
BV
BV
I =10μA
45
45
5.0
0.05
0.10
0.60
0.70
0.55
100
C
I =10mA
C
I =1.0μA
EBO
E
V
V
V
V
V
I =10mA, I =250μA
0.35
0.55
0.85
1.05
0.75
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
BE(ON)
C
B
B
B
B
I =50mA, I =1.25mA
C
I =10mA, I =250μA
C
I =50mA, I =1.25mA
C
V
=5.0V, I =2.0mA
CE
CE
CB
EB
CE
C
f
C
C
V
V
V
V
=5.0V, I =10mA, f=100MHz
250
1.7
11
T
C
=10V, I =0, f=1.0MHz
E
c
e
=0.5V, I =0, f=1.0MHz
C
NF
=5.0V, I =200μA, R =2.0kΩ,
C S
f=1.0kHz, BW=200Hz
6.0
dB
BCX70G
MIN MAX
BCX70H
BCX70J
MIN MAX
30
BCX70K
MIN MAX
100
MIN
40
MAX
h
h
h
V
V
V
=5.0V, I =10μA
C
FE
FE
FE
CE
CE
CE
=5.0V, I =2.0mA
120
50
220
180
70
310
250
90
460
380
100
630
C
=1.0V, I =50mA
C
R2 (20-November 2009)
BCX70 SERIES
SURFACE MOUNT
NPN SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) BASE
2) EMITTER
3) COLLECTOR
DEVICE
BCX70G
BCX70H
BCX70J
BCX70K
MARKING CODE
AG
AH
AJ
AK
R2 (20-November 2009)
www.centralsemi.com
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