CEDM7001VLTRLEADFREE [CENTRAL]
Small Signal Field-Effect Transistor,;
| 型号： | CEDM7001VLTRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Field-Effect Transistor, |
| 文件： | 总2页 (文件大小：1235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Prodduucctt BBrriieeff
CEDM7001VL (N-Channel)
CEDM8001VL (P-Channel)
SOT-883VL
20V, 100mA, MOSFETs
in the very low profile SOT-883VL package
Top View
Bottom View
Typical Electrical Characteristics
Central Semiconductor’s CEDM7001VL (N-Channel) and
CEDM7001VL (N-Channel)
CEDM8001VL (P-Channel) are Enhancement-mode MOSFETs
packaged in the very low profile SOT-883VL case. These devices
are designed for space constrained high speed amplifier and driver
applications where package height is a critical design element.
These MOSFETs offers low r
and low gate charge.
DS(ON)
Features:
• Low r
DS(ON)
• Low threshold voltage
• Logic level compatible
Applications:
• Load/Power switches
• DC-DC converters
• Power management
CEDM8001VL (P-Channel)
Benefits:
• High power density
• Very low package profile (0.32mm)
• Space saving surface mount package
Package Profile Comparison:
The SOT-883VL has a 46% lower profile than the SOT-883 and
a 20% lower profile than the SOT-883L.
0.4mm
0.6mm
0.32mm
SOT-883
SOT-883L
SOT-883VL
Maximum Ratings (T =25˚C)
Electrical Characteristics: (T =25˚C)
A
A
Type No.
I
P
T
T
BV
V
r
@ V
GS
(V)
@ I
Q
C
C
,
DS(ON)
D
D
J
stg
DSS
GS(th)
(V)
D
gs
iss
rss
(mA)
MAX
(mW)
MAX
(˚C)
(V)
(Ω)
(Ω)
(mA)
(nC)
TYP
(pF)
TYP
(pF)
TYP
MAX
MIN
MIN
MAX
TYP
MAX
4.0
2.5
10
10
0.9
1.3
3.0
4.0
CEDM7001VL
CEDM8001VL
100
100
100
100
-65 to +150
-65 to +150
20
20
0.6
0.9
0.16
9.0
45
4.0
15
4.0
2.5
10
10
1.9
2.4
8.0
12
0.6
1.1
0.158
Services:
Weblink/Samples:
• Bonded Inventory
• Custom Electrical Screening
• Custom Electrical Characteristic Curves
• SPICE Models
• Custom Packaging
• Package Base Options
• Custom Device Development/
Multi Discrete Modules (MDM™)
For more information
or to request
samples visit:
• Bare Die for Hybrid Applications
www.centralsemi.com/info/LPMOSFETs
145 Adams Avenue
Hauppauge
New York
11788
USA
www.centralsemi.com
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20V, 100mA, MOSFETs in the
very low profile SOT-883VL package
CEDM7001VL (N-Channel)
CEDM8001VL (P-Channel)
Mechanical Drawing
Mounting Pad Geometry
(Dimensions in mm)
Pinout Drawings
N-Channel
P-Channel
LEAD CODE:
1) Gate
2) Source
3) Drain
MARKING CODES
CEDM7001VL: 7
CEDM8001VL: 8
Tape Dimensions and Orientation (Dimensions in mm)
Tape Width: 8mm
Devices are taped in
accordance with
Electronic Industries
Association Standard
EIA-481-D
Packaging Base /
Ordering Information
Reel
Size
Quantity
Central
Item No.
CEDM7001VL TR
CEDM8001VL TR
7”
8,000 pcs.
Direction of Unreeling
Reel Packing Information
Package Type Options (Dimensions in mm)
Package
Length Width Height
P
Central
Shipping
Weight (Max.)
D
Reels
per Box per Box
Parts
Box Dimensions
(mW) Item Number
Reel
Size
(Max)
(Max)
CEDM7001VL
100
INCH
CM
LB
KG
SOT-883VL
SOT-883L
SOT-953
1.05
1.05
1.05
1.70
0.65
0.65
1.05
1.70
0.32
0.40
0.50
0.78
CEDM8001VL
9
72,000
144,000
320,000
9x9x5
9x9x9
23x23x13
23x23x23
3
6
2
3
CEDM7001
100
CEDM8001
18
7”
CMNDM7001
250
40
21x9x9 53x23x23
13
34
6
CMNDM8001
108
864,000 27x9x17 69x23x43
16
CMUDM7001
250
SOT-523
CMUDM8001
For further information contact:
Innovative Discrete
Semiconductors
Sales at Central Semiconductor Corp.
(631) 435-1110 or visit:
www. cent ra l semi . co m
145 Adams Avenue Hauppauge New York 11788 USA Tel:(631) 435-1110 Fax:(631) 435-1824
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PB CEDM7001VL 8001VL
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CEDM7004TR
Small Signal Field-Effect Transistor, 1.78A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 1 X 0.60 MM, HALOGEN FREE, TLP, 3 PIN
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