CMKT2207TRLEADFREE [CENTRAL]
Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP;
| 型号： | CMKT2207TRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Small Signal Bipolar Transistor, 0.6A I(C), NPN and PNP 晶体 小信号双极晶体管 开关 光电二极管 |
| 文件： | 总2页 (文件大小：114K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMKT2207
Central
Semiconductor Corp.
™
ULTRAmini
SURFACE MOUNT
COMPLEMENTARY TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMKT2207
type is a dual complementary silicon transistor
manufactured by the epitaxial planar process,
epoxy molded in a ULTRAmini™ surface mount
package, designed for small signal general
purpose and switching applications.
Marking Code is K70.
SOT-363 CASE
MAXIMUM RATINGS: (T =25°C)
A
SYMBOL
NPN (Q1)
PNP (Q2)
UNITS
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
75
40
60
60
CBO
CEO
EBO
V
V
V
6.0
5.0
V
mA
mW
I
600
350
C
Power Dissipation
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
T ,T
stg
-65 to +150
357
°C
°C/W
J
Θ
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
MIN MAX
MIN MAX
UNITS
nA
nA
nA
nA
nA
nA
nA
V
I
I
I
I
I
I
I
V
V
V
V
V
V
V
=60V
=50V
-
-
10
-
-
-
10
-
CBO
CBO
CBO
CBO
EBO
CEV
CEV
CB
CB
CB
CB
EB
CE
CE
-
=60V, T =125°C
-
10
-
-
A
=50V, T =125°C
A
-
-
-
10
-
=3.0V
-
10
10
-
=60V, V
=30V, V
I =10µA
=3.0V
=500mV
-
-
-
EB(OFF)
EB(OFF)
-
-
50
-
BV
BV
BV
V
V
V
V
75
40
6.0
-
-
60
60
5.0
-
CBO
CEO
C
I =10mA
-
-
-
V
C
I =10µA
-
V
EBO
E
I =150mA, I =15mA
0.3
1.0
1.2
2.0
-
0.4
1.6
1.3
2.6
-
V
CE(SAT)
CE(SAT)
BE(SAT)
BE(SAT)
FE
C
B
I =500mA, I =50mA
-
-
V
C
B
I =150mA, I =15mA
0.6
-
-
V
C
B
I =500mA, I =50mA
-
V
C
B
h
h
h
h
h
V
=10V, I =0.1mA
35
50
75
75
100
100
CE
CE
CE
CE
CE
C
V
V
V
V
=10V, I =1.0mA
-
-
-
-
FE
C
=10V, I =10mA
FE
C
=10V, I =150mA
100 300
100 300
-
FE
C
=1.0V, I =150mA
50
40
-
-
-
-
FE
C
h
V
=10V, I =500mA
50
FE
CE
C
R0 ( 9-October 2001)
TM
CMKT2207
™
Central
ULTRAmini
SURFACE MOUNT
Semiconductor Corp.
COMPLEMENTARY TRANSISTORS
NPN (Q1)
PNP (Q2)
SYMBOL
TEST CONDITIONS
=20V, I =20mA, f=100MHz
MIN MAX
MIN MAX
UNITS
MHz
MHz
pF
f
V
V
300
-
-
-
8.0
25
-
-
-
-
T
CE
C
f
=20V, I =50mA, f=100MHz
200
T
CE
C
C
V
=10V, I =0, f=1.0MHz
-
-
-
-
-
-
-
-
-
-
-
-
-
8.0
ob
CB
E
C
V
EB
=0.5V, I =0, f=1.0MHz
-
-
pF
ib
EB
C
C
V
=2.0V, I =0, f=1.0MHz
30
pF
ib
C
h
V
CE
=10V, I =1.0mA, f=1.0kHz
2.0
0.25
-
8.0
1.25
8.0
4.0
300
375
35
200
150
4.0
-
10
25
-
225
-
60
-
-
-
kΩ
ie
CE
C
h
V
=10V, I =10mA, f=1.0kHz
kΩ
ie
C
h
V
CE
=10V, I =1.0mA, f=1.0kHz
-
x10-4
x10-4
re
CE
C
h
V
=10V, I =10mA, f=1.0kHz
-
-
re
C
h
V
CE
=10V, I =1.0mA, f=1.0kHz
50
75
5.0
25
-
fe
CE
C
h
V
=10V, I =10mA, f=1.0kHz
-
fe
C
h
V
CE
=10V, I =1.0mA, f=1.0kHz
-
µmhos
µmhos
ps
oe
CE
C
h
V
=10V, I =10mA, f=1.0kHz
-
oe
C
rb'C
V
CE
=10V, I =20mA, f=31.8MHz
-
c
CB
E
NF
V
=10V, I =100µA, R =1.0kΩ, f=1.0kHz
-
-
-
-
-
-
-
-
-
-
dB
C
S
t
V
=30V, V =0.5V, I =150mA, I =15mA
-
-
-
-
-
-
-
-
45
10
40
100
-
ns
on
d
CC BE B1
C
t
V
=30V, V =0.5V, I =150mA, I =15mA
ns
CC BE B1
C
t
V
=30V, V =0.5V, I =150mA, I =15mA
ns
r
CC BE B1
C
t
VCC=6.0V, I =150mA, I =I =15mA
ns
off
C
B1 B2
t
V
=30V, I =150mA, I =I =15mA
ns
s
CC B1 B2
C
t
V
=6.0V, I =150mA, I =I =15mA
80
-
ns
s
CC B1 B2
C
t
V
=30V, I =150mA, I =I =15mA
ns
f
CC B1 B2
C
t
V
=6.0V, I =150mA, I =I =15mA
30
ns
f
CC B1 B2
C
SOT-363 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter Q1
2) Base Q1
Q1 = NPN
Q2 = PNP
3) Collector Q2
4) Emitter Q2
5) Base Q2
6) Collector Q1
R0 ( 9-October 2001)
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