CMLT3906EGTR1 [CENTRAL]
Transistor;
| 型号： | CMLT3906EGTR1 |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMLT3904EG NPN
CMLT3906EG PNP
CMLT3946EG NPN/PNP
Central
Semiconductor Corp.
DESCRIPTION:
ENHANCED SPECIFICATION
The CENTRAL SEMICONDUCTOR CMLT3904EG (two
single NPN), CMLT3906EG (two single PNP), and
CMLT3946EG (one each NPN and PNP complementary)
are combinations of enhanced specification transistors in
a space saving SOT-563 package, designed for small
signal general purpose amplifier and switching
applications.
TM
COMPLEMENTARY PICOmini
SILICON TRANSISTORS
Device is Halogen Free by design
Device is RoHS compliant
•
•
ENHANCED SPECIFICATIONS:
SOT-563 CASE
♦ BV
♦ BV
♦ V
from 40V MIN to 60V MIN (PNP)
from 5.0V MIN to 6.0V MIN (PNP)
from 0.3V MAX to 0.2V MAX(NPN)
CBO
EBO
MARKING CODES:
CMLT3904EG: C4G
CMLT3906EG: C6G
CMLT3946EG: 46G
CE(SAT)
from 0.4V MAX to 0.2V MAX(PNP)
♦ h
FE
from 60 MIN to 70 MIN (NPN/PNP)
MAXIMUM RATINGS: (T =25°C)
SYMBOL
UNITS
V
V
A
♦Collector-Base Voltage
V
V
60
40
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
V
6.0
200
V
♦
I
mA
mW
mW
mW
°C
C
Power Dissipation (Note 1)
Power Dissipation (Note 2)
Power Dissipation (Note 3)
Operating and Storage Junction Temperature
Thermal Resistance (Note 1)
P
P
P
350
300
150
D
D
D
T , T
stg
-65 to +150
357
J
Θ
°C/W
JA
ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (T =25°C unless otherwise noted)
A
NPN
TYP
PNP
TYP
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
V
=30V, V =3.0V
50
nA
V
V
V
V
V
V
V
CEV
CBO
CEO
EBO
CE(SAT)
CE EB
BV
BV
I =10μA
60
40
6.0
115
60
7.5
.057
0.1
0.75
0.85
240
235
90
55
7.9
.05
0.1
0.75
0.85
130
150
♦
C
I =1.0mA
C
♦BV
I =10μA
E
V
I =10mA, I =1.0mA
0.1
0.2
0.85
0.95
♦
♦V
V
C
B
B
B
B
)
I =50mA, I =5.0mA
CE(SAT
C
I =10mA, I =1.0mA
0.65
BE(SAT
BE(SAT
FE
C
)
)
V
h
h
I =50mA, I =5.0mA
C
V
V
=1.0V, I =0.1mA
C
90
100
♦
♦
CE
CE
=1.0V, I =1.0mA
FE
C
♦ Enhanced specification
Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0 mm2
(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0 mm2
(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4 mm2
R0 (19-February 2008)
CMLT3904EG NPN
CMLT3906EG PNP
CMLT3946EG NPN/PNP
TM
Central
Semiconductor Corp.
ENHANCED SPECIFICATION
TM
COMPLEMENTARY PICOmini
SILICON TRANSISTORS
ELECTRICAL CHARACTERISTICS PER TRANSISTOR - Continued:
NPN
TYP
215
110
50
PNP
TYP
150
120
55
SYMBOL
FE
TEST CONDITIONS
MIN
MAX
300
UNITS
h
V
=1.0V, I =10mA
100
CE
C
C
♦
h
V
=1.0V, I =50mA
70
30
300
FE
CE
CE
CE
h
V
V
=1.0V, I =100mA
FE
C
f
=20V, I =10mA, f=100MHz
=5.0V, I =0, f=1.0MHz
MHz
pF
pF
kΩ
-4
X10
T
C
C
C
V
V
V
V
V
V
V
4.0
8.0
12
ob
ib
CB
E
=0.5V, I =0, f=1.0MHz
BE
CE
CE
CE
CE
CE
C
h
h
h
h
=10V, I =1.0mA, f=1.0kHz
1.0
0.1
100
1.0
ie
re
fe
C
=10V, I =1.0mA, f=1.0kHz
10
C
=10V, I =1.0mA, f=1.0kHz
400
60
4.0
C
=10V, I =1.0mA, f=1.0kHz
μS
dB
oe
C
NF
=5.0V,I =100μA, R =1.0KΩ,
C
S
f=10Hz to 15.7kHz
t
t
t
t
V
V
V
V
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
35
35
200
50
ns
ns
ns
ns
d
r
s
f
CC
CC
CC
CC
C
=3.0V, V =0.5V, I =10mA, I =1.0mA
BE B1
C
=3.0V, I =10mA, I =I =1.0mA
C
C
B1 B2
B1 B2
=3.0V, I =10mA, I =I =1.0mA
♦ Enhanced specification
SOT-563 - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER Q1
2) BASE Q1
3) COLLECTOR Q2
4) EMITTER Q2
5) BASE Q2
6) COLLECTOR Q1
CMLT3906EG
MARKING CODE: C6G
CMLT3904EG
MARKING CODE: C4G
CMLT3946EG
MARKING CODE: 46G
R0 (19-February 2008)
相关型号：
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CMLT3906ETR
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CMLT3946EBK
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