CMPD914BK [CENTRAL]
Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon,;![CMPD914BK](http://pdffile.icpdf.com/pdf1/p00076/img/icpdf/CMPD914_399476_icpdf.jpg)
型号: | CMPD914BK |
厂家: | ![]() |
描述: | Rectifier Diode, 1 Element, 0.25A, 100V V(RRM), Silicon, 二极管 开关 |
文件: | 总2页 (文件大小:81K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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TM
Ce n t r a l
CMPD914
S e m ic o n d u c t o r Co r p .
HIGH SPEED
SWITCHING DIODE
DESCRIPTION
The CENTRAL SEMICONDUCTOR
CMPD914 type is a ultra-high speed silicon
switching diode manufactured by the epitaxial
planar process, in an epoxy molded surface
mount package, designed for high speed
switching applications.
Marking code is C5D.
SOT-23 CASE
o
MAXIMUM RATINGS (T =25 C)
A
SYMBOL
UNITS
V
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 msec.
Forward Surge Current, tp=1 sec.
Power Dissipation
V
V
I
75
100
250
R
RRM
F
V
mA
mA
mA
mA
mA
mW
I
I
I
250
FRM
FSM
FSM
4000
2000
1000
350
I
FSM
P
D
Operating and Storage
Junction Temperature
Thermal Resistance
o
o
T ,T
J stg
JA
-65 to +150
357
C
C/W
Θ
o
ELECTRICAL CHARACTERISTICS (T =25 C unless otherwise noted)
A
SYMBOL
TEST CONDITIONS
MIN
100
MAX
UNITS
V
nA
µA
V
V
I =100µA
BR
R
I
I
V
V =20V
25
5.0
1.0
4.0
R
R
R
V =75V
R
I =10mA
F
F
C
T
t
V =0, f=1 MHz
R
pF
I =I =10mA, R =100Ω, Rec. to 1.0mA
rr
R F
L
4.0
ns
128
All dimensions in inches (mm).
NO
A
CONNECTION
C
R2
129
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