CMXD4448TRLEADFREE [CENTRAL]
Rectifier Diode, 3 Element, 0.25A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SUPERMINI-6;
| 型号： | CMXD4448TRLEADFREE |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Rectifier Diode, 3 Element, 0.25A, 100V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, SUPERMINI-6 整流二极管 开关 测试 光电二极管 |
| 文件： | 总2页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
CMXD4448
Central
SUPER-MINI
TRIPLE ISOLATED
SURFACE MOUNT
HIGH SPEED
Semiconductor Corp.
DESCRIPTION:
SWITCHING DIODE
The
CENTRAL
SEMICONDUCTOR
CMXD4448 type contains three (3) Isolated
High Speed Silicon Switching Diodes,
manufactured by the epitaxial planar
process, epoxy molded in a super-mini
surface mount package, designed for
applications requiring high speed switching
applications. Marking code is X48.
SOT-26 CASE
MAXIMUM RATINGS (T =25°C)
A
SYMBOL
UNITS
Continuous Reverse Voltage
Peak Repetitive Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Forward Surge Current, tp=1 µsec.
Forward Surge Current, tp=1 sec.
Power Dissipation
V
V
75
100
250
V
V
R
RRM
I
I
I
I
mA
mA
mA
mA
mW
F
250
FRM
FSM
FSM
4000
1000
350
P
D
Operating and Storage
Junction Temperature
T ,T
J stg
-65 to +150
357
°C
°C/W
Thermal Resistance
JA
ELECTRICAL CHARACTERISTICS PER DIODE (T =25°C unless otherwise noted)
A
SYMBOL
R
TEST CONDITIONS
MIN
MAX UNITS
I
V =20V
25
nA
V
R
BV
BV
I =5.0µA
75
100
R
R
R
I =100µA
V
R
V
C
t
I =100mA
1.0
4.0
4.0
V
pF
ns
F
T
F
V =0, f=1 MHz
R
I =I =10mA, R =100 Rec. to 1.0mA
R F
rr
L
R1 ( 14-Sept 2000)
TM
CMXD4448
SUPER-MINI
Central
TRIPLE ISOLATED
SURFACE MOUNT
HIGH SPEED
Semiconductor Corp.
SWITCHING DIODE
MECHANICAL OUTLINE - SOT-26 CASE
All Dimensions in Inches (mm)
Lead Code
Pin Configuration
1) Anode 1
2) Anode 2
3) Anode 3
4) Cathode 3
5) Cathode 2
6) Cathode 1
R1 ( 14-Sept 2000)
相关型号：
CMXDM7002ABK
Small Signal Field-Effect Transistor, 0.28A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERMINI PACKAGE-6
CENTRAL
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