CP309-CZT3090L-WN [CENTRAL]
Transistor;
| 型号： | CP309-CZT3090L-WN |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
PROCESS CP309
Power Transistor
Central
Semiconductor Corp.
NPN - Low Saturation Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL PLANAR
Die Size
Die Thickness
41.3 x 41.3 MILS
9.0 MILS
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
9.5 x 9.2 MILS
12.8 x 10.2 MILS
Al - 30,000Å
Au - 18,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
6,670
PRINCIPAL DEVICE TYPES
CMPT3090L
CXT3090L
CZT3090L
CMXT3090L
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R2 (15- September 2003)
TM
PROCESS CP309
Typical Electrical Characteristics
Central
Semiconductor Corp.
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
R2 (15- September 2003)
www.centralsemi.com
相关型号：
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