CP608-CJD32C-CM [CENTRAL]
Transistor;型号: | CP608-CJD32C-CM |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Transistor |
文件: | 总2页 (文件大小:640K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PROCESS CP608
Power Transistor
PNP - Amp/Switch Transistor Chip
PROCESS DETAILS
Process
EPITAXIAL BASE
Die Size
66 X 66 MILS
12.5 ± 1.0 MILS
12 X 24 MILS
11 X 14 MILS
Al - 50,000Å
Die Thickness
Base Bonding Pad Area
Emitter Bonding Pad Area
Top Side Metalization
Back Side Metalization
Cr/Ni/Ag - 16,000Å
GEOMETRY
GROSS DIE PER 4 INCH WAFER
2,630
PRINCIPAL DEVICE TYPES
CJD32C
TIP32C
BACKSIDE COLLECTOR
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-August 2006)
PROCESS CP608
Typical Electrical Characteristics
145 Adams Avenue
Hauppauge, NY 11788 USA
Tel: (631) 435-1110
Fax: (631) 435-1824
www.centralsemi.com
R3 (21-August 2006)
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