CS89M [CENTRAL]
0.8 AMP SCR 600 THRU 800 VOLTS; 0.8 AMP SCR 600 THRU 800伏
| 型号： | CS89M |
| 厂家： | 
CENTRAL SEMICONDUCTOR CORP |
| 描述： | 0.8 AMP SCR 600 THRU 800 VOLTS |
| 文件： | 总2页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TM
Central
CS89M
CS89N
Semiconductor Corp.
0.8 AMP SCR
600 THRU 800 VOLTS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CS89M
series type is an Epoxy Molded Silicon Controlled
Rectifier designed for sensing circuit applications
and control systems.
MARKING CODE: FULL PART NUMBER
SOT-89 CASE
MAXIMUM RATINGS: (T =25°C unless otherwise noted)
C
SYMBOL
CS89M
600
CS89N
800
UNITS
V
A
A
A2s
W
W
A
V
Peak Repetitive Off-State Voltage
V
V
DRM, RRM
RMS On-State Current (T =60°C)
I
I
0.8
10
C
T(RMS)
TSM
Peak One Cycle Surge (t=10ms)
I2t Value for Fusing (t=10ms)
Peak Gate Power (tp=10µs)
Average Gate Power Dissipation
Peak Gate Current (tp=10µs)
Peak Gate Voltage (tp=10µs)
Storage Temperature
I2t
0.24
2.0
0.1
1.0
8.0
P
P
GM
G(AV)
GM
I
V
GM
stg
J
T
T
Θ
-40 to +150
-40 to +125
104
°C
°C
°C/W
Junction Temperature
Thermal Resistance
JA
ELECTRICAL CHARACTERISTICS: (T =25°C unless otherwise noted)
C
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
1.0
100
200
5.0
UNITS
µA
µA
µA
mA
V
I
I
I
I
V
V
I
I
Rated V
Rated V
V
R
=1KΩ
DRM, RRM
DRM, RRM, GK
, V =1KΩ, T =125°C
R
DRM, RRM
DRM RRM, GK
C
V =12V
20
GT
H
GT
TM
D
R
=1KΩ
GK
0.25
0.61
1.2
V =12V
0.8
1.7
D
TM
I
=1.0A, tp=380µs
V
V/µs
2
dv/dt
V = / V
R
=1KΩ, T =125°C
25
3
D
DRM, GK
C
R0 (10-May 2004)
TM
CS89M
CS89N
Central
Semiconductor Corp.
0.8 AMP SCR
600 THRU 800 VOLTS
SOT-89 CASE - MECHANICAL OUTLINE
DIMENSIONS
LEAD CODE:
1) GATE
INCHES
MILLIMETERS
SYMBOL MIN
MAX
0.055 0.067
4°
MIN
1.40
MAX
1.70
2) ANODE
A
B
C
D
E
F
3) CATHODE
4°
0.014 0.018
0.173 0.185
0.064 0.074
0.146 0.177
0.090 0.106
0.028 0.051
0.014 0.019
0.017 0.023
0.059
0.35
4.40
1.62
3.70
2.29
0.70
0.36
0.44
0.46
4.70
1.87
4.50
2.70
1.30
0.48
0.58
MARKING CODE:
FULL PART NUMBER
G
H
J
K
L
M
1.50
3.00
0.118
SOT-89 (REV: R4)
R0 (10-May 2004)
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