MPSA92TRE [CENTRAL]
Small Signal Bipolar Transistor, 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,;型号: | MPSA92TRE |
厂家: | CENTRAL SEMICONDUCTOR CORP |
描述: | Small Signal Bipolar Transistor, 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, 晶体管 |
文件: | 总3页 (文件大小:515K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MPSA92
MPSA93
www.centralsemi.com
SILICON
HIGH VOLTAGE
PNP TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR MPSA92 and
MPSA93 are silicon PNP transistors designed for
high voltage applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (T =25°C)
Collector-Base Voltage
SYMBOL
MPSA92
300
MPSA93
200
UNITS
V
A
V
V
V
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
300
200
V
V
5.0
500
625
Continuous Collector Current
Power Dissipation
I
mA
mW
°C
C
P
D
Operating and Storage Junction Temperature
Thermal Resistance
T , T
-65 to +150
200
J
stg
°C/W
JA
ELECTRICAL CHARACTERISTICS: (T =25°C)
MPSA92
A
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
I
I
I
V
V
V
=200V
=160V
=3.0V
-
250
-
-
nA
CBO
CEO
EBO
CB
CE
EB
-
-
-
-
-
250
nA
nA
V
100
100
BV
BV
BV
I =100μA
300
300
5.0
-
-
200
200
5.0
-
-
CBO
CEO
EBO
C
I =1.0mA
-
-
V
C
I =100μA
-
0.5
0.9
-
-
0.4
0.9
-
V
E
V
V
I =20mA, I =2.0mA
V
CE(SAT)
BE(SAT)
FE
C
B
I =20mA, I =2.0mA
-
-
V
C
B
h
h
h
V
=10V, I =1.0mA
25
40
25
50
-
25
40
25
50
-
CE
CE
CE
CE
CB
C
V
V
V
V
=10V, I =10mA
-
-
FE
C
=10V, I =30mA
-
-
FE
C
f
=20V, I =10mA, f=100MHz
-
-
MHz
pF
T
C
C
=20V, I =0, f=1.0MHz
6.0
8.0
ob
E
R1 (8-November 2013)
MPSA92
MPSA93
SILICON
HIGH VOLTAGE
PNP TRANSISTORS
TO-92 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Emitter
2) Base
3) Collector
MARKING:
FULL PART NUMBER
R1 (8-November 2013)
www.centralsemi.com
MPSA92
MPSA93
SILICON
HIGH VOLTAGE
PNP TRANSISTORS
TYPICAL ELECTRICAL CHARACTERISTICS
R1 (8-November 2013)
www.centralsemi.com
相关型号:
MPSA92TRELEADFREE
Small Signal Bipolar Transistor, 300V V(BR)CEO, 1-Element, PNP, Silicon, TO-92,
CENTRAL
©2020 ICPDF网 联系我们和版权申明