CHM50N06PAPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CHM50N06PAPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：183K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM50N06PAPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts CURRENT 36 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
TO-252A
FEATURE
* Small package. (TO-252A)
.280 (7.10)
.238 (6.05)
* Super high dense cell design for extremely low RDS(ON).
.094 (2.40)
.087 (2.20)
.035 (0.89)
.220 (5.59)
.195 (4.95)
* High power and current handing capability.
.018 (0.45)
CONSTRUCTION
* N-Channel Enhancement
(1)
(3) (2)
.024 (0.61)
.016 (0.40)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
2 Source
3 Drain( Heat Sink )
D
(3)
CIRCUIT
(1)
G
Dimensions in inches and (millimeters)
TO-252A
(2)
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM50N06PAPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
60
V
VGSS
±20
V
Maximum Drain Current - Continuous
- Pulsed
36
ID
A
(Note 3)
105
PD
TJ
68
W
°C
°C
Maximum Power Dissipation at Tc = 25°C
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
50
°C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM50N06PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
60
DSS
I
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
1
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
2
4
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
mΩ
18
23
V
GS=10V, I =15A
D
gFS
S
15
VDS =10V, ID = 15A
SWITCHING CHARACTERISTICS (Note 4)
31
40
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=48V, I
GS=10V
D
=50A
nC
nS
Qgs
8
gd
13
Q
ton
tr
Turn-On Time
Rise Time
21
13
40
9
45
33
80
27
VDD
30V
=
,
D
I = 50A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
Ω
GEN= 3.6
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
35
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 15A
GS
(Note 2)
VSD
1.5
V
V
= 0 V
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