CHM51A3ZPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CHM51A3ZPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM51A3ZPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 9.5 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. (SC-73/SOT-223)
1.65+0.15
* High density cell design for extremely low RDS(ON).
6.50+0.20
3.00+0.10
0.90+0.05
2.0+0.3
* Rugged and reliable.
CONSTRUCTION
0.9+0.2
* N-Channel Enhancement
0.70+0.10
0.27+0.05
0.01~0.10
0.70+0.10
2.30+0.1
0.70+0.10
4.60+0.1
1
3
2
1 Gate
2 Source
3 Drain ( Heat Sink )
D
(3)
CIRCUIT
(1)
G
Dimensions in millimeters
SC-73/SOT-223
(2)
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM51A3ZPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
30
V
VGSS
±20
V
Maximum Drain Current - Continuous
- Pulsed
9.5
ID
A
(Note 3)
38
PD
TJ
3000
mW
°C
Maximum Power Dissipation
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
42
°C/W
2006-01
RATING CHARACTERISTIC CURVES ( CHM51A3ZPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
30
DSS
I
Zero Gate Voltage Drain Current
VDS = 30 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
1
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
1
3
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
17
19.5
28
V
V
GS=10V, I
D
=17.5A
=17.5A
RDS(ON)
m
Ω
Static Drain-Source On-Resistance
Forward Transconductance
GS=4.5V, I
D
23
13
gFS
S
VDS =15V, ID = 17.5A
SWITCHING CHARACTERISTICS (Note 4)
14
3.7
5
17
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=24V, I
GS=5V
D
=10A
nC
nS
Qgs
gd
Q
ton
tr
Turn-On Time
Rise Time
20
7
50
21
60
24
VDD
15V
=
,
D
I = 10A
GS
V
= 4.5 V
toff
tf
Turn-Off Time
Fall Time
30
8
7Ω
GEN= 4.
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
10
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 10A
GS
(Note 2)
VSD
1.3
V
V
= 0 V
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