CHM5P03PAPT [CHENMKO]
P-Channel Enhancement Mode Field Effect Transistor; P沟道增强型场效应晶体管
| 型号： | CHM5P03PAPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | P-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：169K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM5P03PAPT
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts CURRENT 15 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
TO-252A
FEATURE
* Small flat package. ( TO-252A )
.280 (7.10)
.238 (6.05)
* High density cell design for extremely low RDS(ON).
.094 (2.40)
.087 (2.20)
.035 (0.89)
.220 (5.59)
.195 (4.95)
* Rugged and reliable.
.018 (0.45)
CONSTRUCTION
* P-Channel Enhancement
(1)
(3) (2)
.024 (0.61)
.016 (0.40)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
2 Source
3 Drain( Heat Sink )
D
3
CIRCUIT
1
G
Dimensions in inches and (millimeters)
TO-252A
2
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM5P03PAPT
Units
VDSS
Drain-Source Voltage
-30
V
VGSS
Gate-Source Voltage
±20
V
A
Maximum Drain Current - Continuous
- Pulsed
-15
-45
ID
(Note 3)
PD
TJ
42
W
°C
°C
Maximum Power Dissipation
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
50
°C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM5P03PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= -250 µA
-30
DSS
I
Zero Gate Voltage Drain Current
VDS = -30 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
-1
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
-1
-3
V
Gate Threshold Voltage
VDS = VGS, ID = -250 µA
42
70
V
V
GS=-10V, I
D
=-7.5A
=-4.5A
RDS(ON)
m
Ω
Static Drain-Source On-Resistance
Forward Transconductance
120
GS=-4.5V, I
D
78
8
gFS
S
VDS = -15V, ID = -7.5A
SWITCHING CHARACTERISTICS (Note 4)
22.5
2
29
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=-15V, I
GS=-10V
D
=-7.5A
nC
nS
Qgs
gd
Q
6
ton
tr
Turn-On Time
Rise Time
8
15
20
40
25
VDD
-15V
=
11
23
14
,
D
I = -1.0A
GS
V
= -10 V
toff
tf
Turn-Off Time
Fall Time
Ω
GEN= 6
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
(Note 1)
I
-15
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = -7.5A
GS
(Note 2)
VSD
-1.3
V
V
= 0 V
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