CHM630PAPT [CHENMKO]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管
| 型号： | CHM630PAPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | N-Channel Enhancement Mode Field Effect Transistor |
| 文件： | 总2页 (文件大小：185K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHM630PAPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 200 Volts CURRENT 7.8 Ampere
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
TO-252A
FEATURE
* Small package. (TO-252A)
.280 (7.10)
.238 (6.05)
* Super high dense cell design for extremely low RDS(ON).
.094 (2.40)
.087 (2.20)
.035 (0.89)
.220 (5.59)
.195 (4.95)
* High power and current handing capability.
.018 (0.45)
CONSTRUCTION
* N-Channel Enhancement
(1)
(3) (2)
.024 (0.61)
.016 (0.40)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
2 Source
3 Drain( Heat Sink )
D
(3)
CIRCUIT
(1)
G
Dimensions in inches and (millimeters)
TO-252A
(2)
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
Parameter
CHM630PAPT
Units
VDSS
Drain-Source Voltage
Gate-Source Voltage
200
V
VGSS
±20
V
Maximum Drain Current - Continuous
- Pulsed
7.8
ID
A
(Note 3)
31.2
PD
TJ
50
W
°C
°C
Maximum Power Dissipation at Tc = 25°C
Operating Temperature Range
-55 to 150
-55 to 150
Storage Temperature Range
STG
T
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
(Note 1)
R
θJA
Thermal Resistance, Junction-to-Ambient
50
°C/W
2006-02
RATING CHARACTERISTIC CURVES ( CHM630PAPT )
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS
V
= 0 V, I
D
= 250 µA
200
DSS
I
Zero Gate Voltage Drain Current
VDS = 160 V, VGS = 0 V
VGS = 20V,VDS = 0 V
VGS = -20V, VDS = 0 V
25
µ
A
GSSF
I
+100
-100
n
n
Gate-Body Leakage
Gate-Body Leakage
A
A
GSSR
I
(Note 2)
ON CHARACTERISTICS
VGS(th)
2
3
4
V
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
RDS(ON)
360
mΩ
V
GS=10V, I =5A
D
Static Drain-Source On-Resistance
Forward Transconductance
gFS
S
3
6
VDS =10V, ID = 5A
SWITCHING CHARACTERISTICS (Note 4)
27
32
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
V
V
DS=160V, I
GS=10V
D
=5.9A
nC
nS
Qgs
4
gd
14.7
Q
ton
tr
Turn-On Time
Rise Time
50
80
55
60
120
80
VDD
100V
=
,
D
I =5A
GS
V
= 10 V
toff
tf
Turn-Off Time
Fall Time
Ω
R
GEN= 50
50
40
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
S
I
7.8
A
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
,
S
I = 7.8A
GS
VSD
1.3
V
V
= 0 V
相关型号：
©2020 ICPDF网 联系我们和版权申明