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CHT3946UPNGP [CHENMKO]

Transistor,;
CHT3946UPNGP
型号： CHT3946UPNGP
厂家： CHENMKO ENTERPRISE CO. LTD.    CHENMKO ENTERPRISE CO. LTD.
描述：

Transistor,
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CHENMKO ENTERPRISE CO.,LTD  
CHT3946UPNGP  
SURFACE MOUNT  
Complementary Small Signal Transistor  
VOLTAGE 40 Volts CURRENT 0.2 Ampere  
APPLICATION  
* Telephony and proferssional communction equipment.  
* Other switching applications.  
FEATURE  
* Small surface mounting type. (SC-88/SOT363)  
SC-88/SOT-363  
* Low current (Max.=200mA).  
* Suitable for high packing density.  
* Low voltage (Max.=40V) .  
(1)  
(6)  
* High saturation current capability.  
* Voltage controlled small signal switch.  
0.65  
0.65  
1.2~1.4  
2.0~2.2  
CONSTRUCTION  
* Complementary Pair  
(3)  
(4)  
0.15~0.35  
* One CH3904-Type NPN  
One CH3906-Type PNP  
1.15~1.35  
MARKING  
* U4  
0.08~0.15  
0.8~1.1  
0~0.1  
0.1 Min.  
6
1
4
3
2.15~2.45  
CIRCUIT  
SC-88/SOT-363  
Dimensions in millimeters  
CH3904 LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
VCBO collector-base voltage open emitter  
MIN.  
MAX.  
60  
UNIT  
−
−
−
−
−
V
V
V
VCEO  
VEBO  
IC  
collector-emitter voltage  
emitter-base voltage  
collector current DC  
total power dissipation  
open base  
40  
6
open collector  
200  
mA  
200  
mW  
Ptot  
Tamb ≤ 25 °C; note 1  
Tstg  
−
+150  
°
C
65  
storage temperature  
CH3906 LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
VCBO collector-base voltage open emitter  
MIN.  
MAX.  
UNIT  
−
−
−
-40  
-40  
-5  
V
V
V
VCEO  
VEBO  
collector-emitter voltage  
emitter-base voltage  
open base  
open collector  
IC  
collector current DC  
total power dissipation  
storage temperature  
−
−
-200  
200  
mA  
mW  
°C  
Ptot  
Tstg  
Tamb ≤ 25 °C; note 1  
−65  
+150  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2004-8  
RATING CHARACTERISTIC CURVES ( CHT3946UPNGP )  
CH3904 THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
Note  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
thermal resistance from junction to ambient  
500  
K/W  
1. Transistor mounted on an FR4 printed-circuit board.  
CH3904 CHARACTERISTICS  
Tamb = 25 °C unless otherwise speciÞed.  
SYMBOL  
ICBO  
IEBO  
hFE  
PARAMETER  
collector cut-off current  
emitter cut-off current  
DC current gain  
CONDITIONS  
IE = 0; VCB = 30 V  
MIN.  
MAX.  
50  
UNIT  
−
−
nA  
nA  
IC = 0; VEB = 6 V  
VCE = 1 V; note 1  
50  
I
I
I
I
I
C = 0.1 mA  
40  
70  
−
C = 1 mA  
−
C = 10 mA  
C = 50 mA  
C = 100 mA  
100  
60  
30  
−
300  
−
−
VCEsat  
collector-emitter saturation  
voltage  
IC = 10 mA; IB = 1 mA  
IC = 50 mA; IB = 5 mA  
200  
300  
850  
950  
4
mV  
mV  
mV  
mV  
pF  
−
VBEsat  
base-emitter saturation voltage IC = 10 mA; IB = 1 mA  
C = 50 mA; IB = 5 mA  
650  
−
I
Cc  
Ce  
collector capacitance  
emitter capacitance  
IE = ie = 0; VCB = 5 V; f = 1 MHz  
−
IC = ic = 0; VBE = 500 mV;  
f = 1 MHz  
−
8
pF  
fT  
F
transition frequency  
noise Þgure  
IC = 10 mA; VCE = 20 V;  
f = 100 MHz  
300  
−
MHz  
dB  
IC = 100 µA; VCE = 5 V; RS = 1 kΩ;  
−
5
f = 10 Hz to 15.7 kHz  
Switching times (between 10% and 90% levels);  
ton  
td  
turn-on time  
delay time  
rise time  
ICon = 10 mA; IBon = 1 mA;  
IBoff = −1 mA  
−
−
−
−
−
−
65  
ns  
ns  
ns  
ns  
ns  
ns  
35  
tr  
35  
toff  
ts  
turn-off time  
storage time  
fall time  
240  
200  
50  
tf  
Note  
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.  
RATING CHARACTERISTIC CURVES ( CHT3946UPNGP )  
CH3906 THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-a  
Note  
PARAMETER  
CONDITIONS  
note 1  
VALUE  
UNIT  
thermal resistance from junction to ambient  
500  
K/W  
1. Transistor mounted on an FR4 printed-circuit board.  
CH3906 CHARACTERISTICS  
Tamb = 25 °C unless otherwise speciÞed.  
SYMBOL  
ICBO  
IEBO  
hFE  
PARAMETER  
collector cut-off current  
emitter cut-off current  
DC current gain  
CONDITIONS  
IE = 0; VCB = - 30 V  
MIN.  
MAX.  
-50  
UNIT  
−
−
nA  
nA  
IC = 0; VEB = 6 V  
VCE = -1V; note 1  
-50  
I
I
I
I
I
C = -0.1mA  
60  
80  
−
C = -1mA  
−
C = -10 mA  
C = - 50 mA  
C = -100 mA  
100  
60  
30  
−
300  
−
−
VCEsat  
collector-emitter saturation  
voltage  
IC = -10 mA; IB = - 1 mA  
IC = -50 mA; IB = - 5 mA  
-250  
-400  
-850  
-950  
4.5  
10  
mV  
mV  
mV  
mV  
pF  
−
VBEsat  
base-emitter saturation voltage IC = -10 mA; IB = -1mA  
C = -50 mA; IB = - 5 mA  
-650  
I
−
−
−
Cc  
Ce  
collector capacitance  
emitter capacitance  
IE = ie = 0; VCB = - 5 V ;f = 1 MHz  
pF  
IC = ic = 0; VEB = -500 mV;  
f = 1 MHz  
fT  
F
transition frequency  
noise Þgure  
IC = 10 mA; VCE = - 20 V ;  
f = 100 MHz  
250  
−
MHz  
dB  
IC = 100 µA; VCE = - 5 V;RS = 1 kΩ; −  
4
f = 10 Hz to 15.7 kHz  
Switching times (between 10% and 90% levels);  
ton  
td  
turn-on time  
delay time  
rise time  
ICon = -10 mA; IBon = -1 mA;  
IBoff = 1 mA  
−
−
−
−
−
−
65  
ns  
ns  
ns  
ns  
ns  
ns  
35  
tr  
35  
toff  
ts  
turn-off time  
storage time  
fall time  
300  
225  
75  
tf  
Note  
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.  
RATING CHARACTERISTIC CURVES ( CHT3946UPNGP )  
15  
f = 1MHz  
350  
300  
250  
10  
200  
150  
5
Cibo  
100  
50  
0
Cobo  
0
0.1  
0
175  
200  
1
10  
25  
50  
150  
100  
75 100 125  
TA, AMBIENT TEMPERATURE (°C)  
VCB, COLLECTOR-BASE VOLTAGE (V)  
Fig. 1, Max Power Dissipation vs  
Ambient Temperature (Total Device)  
Fig. 2, Input and Output Capacitance vs.  
Collector-Base Voltage (NPN-CH3904)  
1000  
1
IC  
= 10  
IB  
TA = 125°C  
100  
TA = +25°C  
TA = -25°C  
0.1  
10  
VCE = 1.0V  
0.01  
1
0.1  
1
10  
100  
1000  
1
1000  
0.1  
10  
100  
IC, COLLECTOR CURRENT (mA)  
IC, COLLECTOR CURRENT (mA)  
Fig. 4, Typical Collector-Emitter  
Saturation Voltage vs. Collector Current (NPN-CH3904)  
Fig. 3, Typical DC Current Gain vs  
Collector Current (NPN-CH3904)  
100  
10  
IC  
IB  
f = 1MHz  
= 10  
1
10  
Cibo  
Cobo  
0.1  
1
0.1  
0.1  
1
10  
100  
1000  
1
10  
100  
VCB, COLLECTOR-BASE VOLTAGE (V)  
IC, COLLECTOR CURRENT (mA)  
Fig. 5, Typical Base-Emitter  
Saturation Voltage vs. Collector Current (NPN-CH3904)  
Fig. 6, Input and Output Capacitance vs.  
Collector-Base Voltage (NPN-CH3904)  
RATING CHARACTERISTIC CURVES ( CHT3946UPNGP )  
1000  
10  
IC  
IB  
= 10  
TA = 125°C  
1
100  
TA = +25°C  
TA = -25°C  
0.1  
10  
VCE = 1.0V  
0.01  
1
10  
IC, COLLECTOR CURRENT (mA)  
1
100  
1000  
1
1000  
0.1  
10  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 7, Typical DC Current Gain vs  
Collector Current (PNP-CH3906)  
Fig. 8, Typical Collector-Emitter Saturation Voltage  
vs. Collector Current (PNP-CH3906)  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
IC  
IB  
= 10  
1
10  
100  
IC, COLLECTOR CURRENT (mA)  
Fig. 9, Typical Base-Emitter  
Saturation Voltage vs. Collector Current (PNP-CH3906)  

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