CHT4124PT [CHENMKO]
General Purpose Transistor; 通用晶体管
| 型号： | CHT4124PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | General Purpose Transistor |
| 文件： | 总4页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT4124PT
SURFACE MOUNT
General Purpose Transistor
VOLTAGE 25 Volts CURRENT 200 mAmpere
APPLICATION
* AF input stages and driver applicationon equipment.
* Other general purpose applications.
FEATURE
* Small surface mounting type. (SOT-23)
* High current gain.
SOT-23
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
(1)
(2)
(3)
CONSTRUCTION
* NPN Switching Transistor
(
)
(
)
.055 1.40
.028 0.70
MARKING
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
* KT
.086 (2.20)
(
)
.045 1.15
3
CIRCUIT
(
)
.033 0.85
1
2
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
UNIT
−
−
−
−
−
30
V
V
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
open base
25
open collector
5
200
350
mA
Ptot
Tamb ≤ 25 °C; note 1
mW
Tstg
Tj
storage temperature
−65
−
+150
150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
+150
Note
2004-11
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC CURVES ( CHT4124PT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
PARAMETER
CONDITIONS
IC = 10uA ; IE = 0A
MIN.
MAX.
UNIT
V
V
V
−
−
−
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
30
25
5
IC = 1mA ; IB = 0A
IE = 10uA ; IC = 0A
IE = 0; VCB = 20 V
IC = 0; VEB = 3 V
−
50
50
nA
nA
IEBO
emitter cut-off current
−
hFE
DC current gain
= 50 mA; VCE =I 1V; note 3
IC
−
60
hFE
DC current gain
IC = 2 mA; VCE = 1V
120
−
360
300
950
VCEsat
collector-emitter saturation
IC = 50 mA; IB = 5 mA
mV
mV
pF
−
VBEsat
Cobo
Cibo
fT
base-emitter saturation voltage
output capacitance
IC = 50 mA; IB = 5 mA
IE = ie = 0; VCB = 5 V; f = 1 MHz
IE = ie = 0; VCB = 5 V; f = 1 MHz
−
4
input capacitance
−
8
pF
transition frequency
IC = 10 mA; VCE = 20 V;
300
−
MHz
f = 100 MHz
Note
3. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHT4124PT )
Typical Characteristics
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
500
400
300
200
100
0
V CE = 5V
0.15
0.1
β
= 10
125 °C
125 °C
25 °C
25 °C
0.05
- 40 °C
- 40 °C
0.1
1
10
100
0.1
1
10
1 00
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter Saturation
Voltage vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
0.8
0.6
0.4
0.2
V
= 5V
1
β
= 10
CE
- 40 °C
- 40 °C
0.8
0.6
0.4
25 °C
25 °C
125 °C
125 °C
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Capacitance vs
Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
10
500
f = 1.0 MHz
VCB= 30V
100
10
1
5
4
C
ibo
3
2
C
0.1
obo
1
0.1
25
50
75
100
125
150
1
10
100
°
TA - AMBIENT TEMPERATURE ( C)
REVERSE BIAS VOLTAGE (V)
RATING CHARACTERISTIC CURVES ( CHT4124PT )
Typical Characteristics
Noise Figure vs Frequency
Noise Figure vs Source Resistance
12
10
8
12
10
8
I
= 1.0 mA
C
R
V CE = 5.0V
I
= 1.0 mA
C
= 200Ω
S
I
= 50 µA
= 1.0 kΩ
I
= 5.0 mA
C
S
C
R
I
= 50 µA
C
I
= 0.5 mA
C
R
6
6
= 200Ω
S
I
= 100 µA
4
4
C
2
2
I
= 100 µA, R = 500 Ω
C
S
0
0
0.1
1
10
100
0.1
1
10
100
f - FREQUENCY (kHz)
R
S
- SOURCE RESISTANCE (
)
kΩ
Power Dissipation vs
Ambient Temperature
Current Gain and Phase Angle
vs Frequency
1
0.75
0.5
50
0
45
40
35
30
25
20
15
10
5
20
40
h fe
60
80
100
120
θ
140
160
180
VCE = 40V
0.25
0
I C = 10 mA
0
1
10
100
1000
0
25
50
75
100
125
150
f - FREQUENCY (MHz)
TEMPERATURE (oC)
Turn-On Time vs Collector Current
Rise Time vs Collector Current
500
500
100
I
c
I
c
IB1= IB2
=
VCC = 40V
IB1= IB2=
10
10
40V
15V
100
T
= 25°C
J
t
@ VCC = 3.0V
r
T
= 125°C
J
2.0V
t
10
5
10
5
@ VCB = 0V
d
1
10
- COLLECTOR CURRENT (mA)
100
1
10
- COLLECTOR CURRENT (mA)
100
I
C
I
C
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