CHT4033XPT [CHENMKO]
PNP SILICON Transistor; PNP硅晶体管
| 型号： | CHT4033XPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP SILICON Transistor |
| 文件： | 总2页 (文件大小：113K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT4033XPT
SURFACE MOUNT
PNP SILICON Transistor
VOLTAGE 80 Volts CURRENT 1 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-62/SOT-89
FEATURE
* Small flat package. (SC-62/SOT-89)
* Suitable for high packing density.
* High saturation current capability.
* Voltage controlled small signal switch.
4.6MAX.
1.7MAX.
1.6MAX.
0.4+0.05
CONSTRUCTION
* PNP SILICON Transistor
+0.08
0.45-0.05
+0.08
+0.08
0.40-0.05
0.40-0.05
1.50+0.1
1.50+0.1
1
2
3
1 Base
2 Collector ( Heat Sink )
3 Emitter
CIRCUIT
1
B
2
C
3
E
Dimensions in millimeters
SC-62/SOT-89
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
UNIT
V
V
V
A
A
−
−
−
−
−
80
80
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
open base
open collector
5.0
1.0
1.5
ICM
1.2
W
Ptot
Tstg
total power dissipation
−
Tamb ≤ 25 °C; note 1
−65
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
Tamb
operating ambient temperature
−65
+150
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT4033XPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
357
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
PARAMETER
collector cut-off current
emitter cut-off current
CONDITIONS
IE = 0; VCB = 60 V
MIN.
MAX.
50
10
UNIT
−
−
nA
nA
IC = 0; VEB = 5 V
IC = 0.1 mA; V CE
−
75
= 5V
hFE
DC current gain
IC = 100 mA; VCE = 5V
IC = 500 mA; VCE =5V
IC = 1.0A; VCE = 5V
300
−
100
70
−
25
0.15
−
V
V
V
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 15 mA
IC =-500 mA; IB = 50 mA
IC =150 mA; IB =15 mA
−
−
−
0.5
0.9
1.1
20
VBEsat
base-emitter saturation voltage
V
IC =-500 mA; IB = 50 mA
IE = ie = 0; VCB = 1 0 V; f = 1 MHz
−
−
collector capacitance
emitter capacitance
Cob
Cib
pF
IC = ic = 0; VBE = 500 mV;
f = 1 MHz
110
pF
IC = 50 mA; VCE = 1 0 V;
f = 1.0 MHz
fT
transition frequency
100
−
MHz
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