CHT42PT [CHENMKO]
NPN High Voltage Transistor; NPN高压晶体管
| 型号： | CHT42PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN High Voltage Transistor |
| 文件： | 总4页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT42PT
SURFACE MOUNT
NPN High Voltage Transistor
VOLTAGE 300 Volts CURRENT 0.5 Ampere
APPLICATION
* Video out to drive color CRT
* Other high voltage applications.
SOT-23
FEATURE
* Small surface mounting type. (SOT-23)
* Low current (Max.=500mA).
* Suitable for high packing density.
* Low voltage (Max.=300V) .
(1)
(2)
* High saturation current capability.
(3)
CONSTRUCTION
(
)
(
)
.055 1.40
.028 0.70
* NPN High Voltage Transistor
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
MARKING
* T42
.086 (2.20)
(
)
.045 1.15
C(3)
CIRCUIT
(
)
.033 0.85
(1) B
E(2)
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
300
300
6
UNIT
−
−
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current DC
open base
open collector
500
500
100
350
+150
150
+150
mA
mA
mA
mW
°C
ICM
IBM
peak collector current
peak base current
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−55
−
°C
Tamb
−55
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-4
RATING CHARACTERISTIC CURVES ( CHT42PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
357
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
hFE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 2 0 0 V
MIN.
MAX.
0.1
UNIT
−
−
uA
uA
IC = 0; VEB = 6 V
0.1
VCE = 10V; note 1;
IC = 1.0 mA
IC = 10 mA
IC = 30 mA
25
40
40
−
−
300
VCEsat
collector-emitter saturation
voltage
IC = 20 mA; IB = 2 mA
−
500
mV
−
VBEsat
Ccb
fT
base-emitter saturation voltage IC = 20 mA; IB = 2 mA
900
3
mV
pF
collector-base capacitance
transition frequency
IE = ie = 0; VCB = 2 0 V ; f = 1 MHz
−
IC = 10 mA; VCE = 20 V;
f = 100 MHz
50
−
MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
RATING CHARACTERISTIC CURVES ( CHT42PT )
Collector-Emitter Saturation
Voltage vs Collector Current
DC Current Gain
vs Collector Current
0.3
0.25
0.2
140
120
100
80
= 1 0
125 °C
25 °C
125 °C
0.15
0.1
60
25 °C
- 40 °C
40
VCE = 5V
- 40 °C
20
0.05
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Base-Emitter ON Voltage vs
Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
0.6
0.4
0.2
1
VCE = 1V
0.8
0.6
0.4
0.2
- 40 °C
- 40 °C
25 °C
25 °C
125 °C
125 °C
= 10
0.1
1
10
100
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
I C - COLLECTOR CURRENT (mA)
Collector-Base and Emitter-Base
Capacitance vs Reverse Bias Voltage
Collector-Cutoff Current
vs Ambient Temperature
100
100
10
1
VCB= 150V
50
C
20
10
5
eb
C
cb
2
1
1
10
100
1000
25
50
75
100
125
150
REVERSE BIAS VOLTAGE (V)
T A - AM BIENT TE MPE RATURE ( C)
°
RATING CHARACTERISTIC CURVES ( CHT42PT )
Power Dissipation vs
Ambient Temperature
1
0.75
0.5
0.25
0
0
25
50
75
100
125
150
TEMPERATURE (oC)
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