CHT5988ZPT [CHENMKO]
PNP Switching Transistor; PNP开关晶体管
| 型号： | CHT5988ZPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP Switching Transistor |
| 文件： | 总3页 (文件大小：384K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT5988ZPT
SURFACE MOUNT
PNP Switching Transistor
VOLTAGE 60 Volts CURRENT 5 Ampere
APPLICATION
* DC/DC converters
* Supply line switching
* Battery charger
* Driver in low supply voltage applications
SC-73/SOT-223
FEATURE
1.65+0.15
* Small flat package. ( SC-73/SOT-223 )
* High current (Max.=5A).
6.50+0.20
3.00+0.10
0.90+0.05
2.0+0.3
* Suitable for high packing density.
* Low voltage (Max.=60V) .
0.9+0.2
CONSTRUCTION
0.70+0.10
0.27+0.05
0.01~0.10
* PNP Switching Transistor
0.70+0.10
2.30+0.1
0.70+0.10
4.60+0.1
1
3
2
1 Base
2 Emitter
3 Collector ( Heat Sink )
C (3)
CIRCUIT
(1) B
E (2)
Dimensions in millimeters
SC-73/SOT-223
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
−
−
−
−
−
−
−
-100
-60
-6
V
V
V
A
A
A
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open base
open collector
-5
ICM
IBM
-15
-1
2.0
+150
150
+150
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C;
W
°C
°C
°C
−55
−
Tamb
−55
2006-7
RATING CHARACTERISTIC CURVES ( CHT5988ZPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
PARAMETER
CONDITIONS
VALUE
UNIT
thermal resistance from junction to ambient
62.5
K/W
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
IC= -100uA
MIN.
MAX.
UNIT
BVCBO
BVCEO
BVEBO
ICBO
−
−
−
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
-100
-60
-6
V
V
IC= -10mA
IE= -100uA
VCB= -80V
VEB= -6V
V
−
-50
-10
−
nA
nA
IEBO
−
Emitter Cut-Off Current
100
120
60
VCE= -1V , IC= -10mA
VCE= -1V , IC= -2A
300
−
hFE
DC Current Gain
VCE= -1V , IC= -5A
−
10
VCE= -1V , IC= -10A
IC= -100mA , IB= -10mA
IC= -1A , IB= -100mA
IC= -2A , IB= -200mA
IC= -5A , IB= -500mA
IC= -5A , IB= -500mA
−
−
-50
-140
-210
-460
-1.27
-1.2
−
mV
(sat)
VCE
Collector-Emitter Saturation Voltage
−
−
(sat)
VBE
Base-Emitter Saturation Voltage
Base-Emitter on Voltage
V
V
−
(on)
VBE
−
VCE= -1V , IC= -5A
100
MHz
pF
fT
VCE= -10V , IE= -100mA
VCB= -10V , IE= 0A , f=1MHz
Transition Frequency
72(Typ.)
Co
b
Collector Output Capacitance
RATING CHARACTERISTIC CURVES ( CHT5988ZPT )
DC Current Gain vs Collector Current
VCE = -1V
Collector Emitter Saturation Voltage vs cOllector Current
1000
1000
100
10
IC/IB = 10
100
10
1.0
0.01
0.1
1
10
0.01
0.1
1
10
-IC䇭䋺䇭COLLECTOR CURRENT ( A )
-IC䇭䋺䇭COLLECTOR CURRENT ( A )
Transistion Frequencyvs Emitter Current
Base Emitter Saturation Voltage vs cOllector Current
1000
10
100
1.0
0.1
10
0.01
0.1
1
0.01
0.1
1
10
-IC䇭䋺䇭COLLECTOR CURRENT ( A )
IE䇭䋺䇭EMITTER CURRENT ( A )
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