BTC4505N3 [COMCHIP]
High Voltage Transistor (NPN); 高压晶体管（ NPN ）
| 型号： | BTC4505N3 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | High Voltage Transistor (NPN) |
| 文件： | 总3页 (文件大小：66K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
High Voltage Transistor (NPN)
COMCHIP
www.comchiptech.com
BTC4505N3
Features
High breakdown voltage. (BV
ceo
=400V)
Low saturation voltage, typically V (sat) =0.1V at I /I =10mA/1mA
ce c b
C
COLLECTOR
3
1
SOT-23
BASE
.119 (3.0)
.110 (2.8)
2
.020 (0.5)
Top View
EMITTER
.037(0.95)
.037(0.95)
.103 (2.6)
.086 (2.2)
.020 (0.5) .020 (0.5)
Dimensions in inches (millimeters)
Limit
Unit
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
400
400
6
300
0.225
150
V
V
V
mA
W
°C
Power Dissipation
Junction Temperature
Pd
Tj
Storage Temperature
Tstg
-55~+150
°C
Page 1
MDS0405003A
High Voltage Transistor (NPN)
COMCHIP
www.comchiptech.com
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
400
400
-
-
-
V
V
IC=50µA, IE=0
IC=1mA, IB=0
IE=50µA, IC=0
-
6
-
-
-
V
-
-
10
20
10
0.5
1.5
270
-
µA
nA
µA
V
VCB=400V, IE=0
VCE=300V, REB=4k
VEB=6V,IC=0
Ө
ICER
-
IEBO
-
-
0.1
*VCE(sat)
*VBE(sat)
hFE
-
IC=10mA, IB=1mA
IC=10mA, IB=1mA
VCE=10V, IC=10mA
-
V
52
-
-
-
fT
Cob
20
7
MHz
pF
VCE=10V, IC=10mA, f=10MHz
VCB=10V, f=1MHz
-
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
Classification Of hFE
Rank
K
P
Q
Range
52~120
82~180
120~270
MDS0405003A
Page 2
High Voltage Transistor (NPN)
COMCHIP
www.comchiptech.com
Characteristic Curves
˦˴̇̈̅˴̇˼̂́ʳ˩̂˿̇˴˺˸ʳ̉̆ʳ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇
˖̈̅̅˸́̇ʳ˚˴˼́ʳ̉̆ʳ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇
˄˃˃˃
˄˃˃˃˃
˄˃˃˃
˄˃˃
˄˃˃
˩˖˘ʳːʳ˄˃˩
˩˖˘ʻ˦˔˧ʼʳ˓ʳ˜˖ʳːʳ˅˃˜˕
˩˖˘ʻ˦˔˧ʼʳ˓ʳ˜˖ʳːʳ˄˃˜˕
˩˖˘ʳːʳˈ˩
˄˃
˩˖˘ʳːʳ˄˩
˄˃
˄
˄
˄˃
˄˃˃
˄
˄˃
˄˃˃
˄˃˃˃
˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ˀˀˀ˜˖ʻ̀˔ʼ
˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ˀˀˀ˜˖ʻ̀˔ʼ
˦˴̇̈̅˴̇˼̂́ʳ˩̂˿̇˴˺˸ʳ̉̆ʳ˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇
ˣ̂̊˸̅ʳ˗˸̅˴̇˼́˺ʳ˖̈̅̉˸
˄˃˃˃
˅ˈ˃
˅˃˃
˄ˈ˃
˄˃˃
ˈ˃
˩˕˘ʻ˦˔˧ʼʳ˓ʳ˜˖ʳː˄˃˜˕
˄˃˃
˃
˄
˄˃
˄˃˃
˄˃˃˃
˃
ˈ˃
˄˃˃
˄ˈ˃
˅˃˃
˖̂˿˿˸˶̇̂̅ʳ˖̈̅̅˸́̇ˀˀˀ˜˖ʻ̀˔ʼ
˔̀˵˼˸́̇ʳ˧˸̀̃˸̅˴̇̈̅˸ˀˀˀ˧˔ʻкʼ
M
MDS0405003A
Page 3
相关型号：
©2020 ICPDF网 联系我们和版权申明