C460MB290-0223 [CREE]
Single Color LED, White,;
| 型号： | C460MB290-0223 |
| 厂家： | 
CREE, INC |
| 描述： | Single Color LED, White, 光电 |
| 文件： | 总7页 (文件大小：252K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
®
MegaBright Generation II LEDs
CxxxMB290-Sxx00
Cree’s MB™ Generation II series of MegaBright LEDs combine highly efficient InGaN materials with Cree’s
proprietary G•SiC® substrate to deliver superior price/performance for high-intensity LEDs. These LED chips have a
geometrically enhanced vertical chip structure to maximize light extraction efficiency and require only a single wire
bond connection. Sorted die kits provide die sheets conveniently sorted into wavelength and radiant flux bins. Cree’s
MB series chips are tested for conformity to optical and electrical specifications and the ability to withstand 1000V
ESD. These LEDs are useful in a broad range of applications such as outdoor full-motion LED video signs, automotive
lighting and white LEDs, yet can also be used in high-volume applications such as LCD backlighting. Cree’s MB series
chips are compatible with most radial and SMT LED assembly processes.
FEATURES
APPLICATIONS
•
MegaBright LED Performance
•
•
•
•
•
White LEDs
–
460 & 470nm
LCD Backlighting Units
Outdoor LED Video Displays
Automotive Dashboard Lighting
Traffic Signals
MB-8 – 8.0 mW min.
MB-10 - 10.0 mW min.
MB-12 - 12.0 mW min.
MB-14 - 14.0 mW min.
MB-16 - 16.0 mW min (460 nm)
–
–
505 nm - 6.0 mW min.
527 nm - 5.0 mW min.
•
•
Single Wire Bond Structure
Class 2 ESD Rating
CxxxMB290-Sxx00 Chip Diagram
Top View
Bottom View
Die Cross Section
G•SiC LED Chip
InGaN
300 x 300 μm
Anode (+)
Mesa (junction)
250 x 250 μm
SiC Substrate
h = 250 μm
Gold Bond Pad
112 μm Diameter
Backside
Metallization
Cathode (-)
Subject to change without notice.
www.cree.com
ꢀ
Maximum Ratings at TA = 25°CNotes ꢀ&3
DC Forward Current
CxxxMB290-Sxx00
30 mA
Peak Forward Current (1/10 duty cycle @ 1kHz)
LED Junction Temperature
100 mA
125°C
Reverse Voltage
5 V
Operating Temperature Range
-40°C to +100°C
-40°C to +100°C
1000 V
Storage Temperature Range
Electrostatic Discharge Threshold (HBM)Note 2
Electrostatic Discharge Classification (MIL-STD-883E)Note 2
Class 2
Note 3
Typical Electrical/Optical Characteristics at TA = 25°C, If = 20 mA
Reverse Current
[I(Vr=5V), μA]
Full Width Half Max.
Part Number
Forward Voltage (Vf, V)
(λD, nm)
Min.
Typ.
3.3
3.3
3.3
3.3
Max.
Max.
Typ.
21
C460MB290-Sxx00
C470MB290-Sxx00
C505MB290-S0600
C527MB290-S0500
2.9
2.9
2.9
2.9
3.7
3.7
3.9
3.9
2
2
2
2
22
30
35
Mechanical Specifications
Description
CxxxMB290-Sxx00
Dimension
Tolerance
± 25
P-N Junction Area (μm)
Top Area (μm)
250 x 250
300 x 300
200 x 200
250
± 25
Bottom Area (μm)
± 25
Chip Thickness (μm)
± 25
Au Bond Pad Diameter (μm)
Au Bond Pad Thickness (μm)
Backside Metal Diameter (μm)
112
± 20
1.2
± 0.5
± 20
104
Notes:
1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000
epoxy) for characterization. Ratings for other packages may differ. The forward currents (DC and Peak) are not limited by the die
but by the effect of the LED junction temperature on the package. The junction temperature limit of 125°C is a limit of the T-1
3/4 package; junction temperature should be characterized in a specific package to determine limitations. Assembly processing
temperature must not exceed 325°C (< 5 seconds).
2. Product resistance to electrostatic discharge (ESD) according to the HBM is measured by simulating ESD using a rapid avalanche
energy test (RAET). The RAET procedures are designed to approximate the maximum ESD ratings shown. The RAET procedure is
performed on each die. The ESD classification of Class 2 is based on sample testing according to MIL-STD-883E.
3. All products conform to the listed minimum and maximum specifications for electrical and optical characteristics when assembled
and operated at 20 mA within the maximum ratings shown above. Efficiency decreases at higher currents. Typical values given
are within the range of average values expected by the manufacturer in large quantities and are provided for information only.
All measurements were made using lamps in T-1 3/4 packages (with Hysol OS4000 epoxy). Dominant wavelength measurements
taken using Illuminance E.
4. Caution: To obtain optimum output efficiency, the maximum height of die attach epoxy on the side of the chip should not exceed
80 μm.
5. Specifications are subject to change without notice.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
USA Tel: +1.919.313.5300
www.cree.com
2
CPR3CK Rev. C
Standard Bins for CxxxMB290-Sxx00
LED chips are sorted to the radiant flux and dominant wavelength bins shown. Sorted die sheets contain die from
only one bin. Sorted die kit (CxxxMB290-Sxx00) orders may be filled with any or all bins (CxxxMB290-02xx) contained
in the kit.
MB-ꢀ6
C460MB290-Sꢀ600
C460MB290-0221
C460MB290-0217
C460MB290-0222
C460MB290-0223
C460MB290-0219
C460MB290-0224
C460MB290-0220
18.0 mW
16.0 mW
C460MB290-0218
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
MB-ꢀ4
C460MB290-Sꢀ400
C460MB290-0221
C460MB290-0217
C460MB290-0213
C460MB290-0222
C460MB290-0223
C460MB290-0219
C460MB290-0215
C460MB290-0224
C460MB290-0220
C460MB290-0216
18.0 mW
16.0 mW
14.0 mW
C460MB290-0218
C460MB290-0214
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
MB-ꢀ2
C460MB290-Sꢀ200
C460MB290-0221
C460MB290-0217
C460MB290-0213
C460MB290-0209
C460MB290-0222
C460MB290-0223
C460MB290-0219
C460MB290-0215
C460MB290-0211
C460MB290-0224
C460MB290-0220
C460MB290-0216
C460MB290-0212
18.0 mW
16.0 mW
14.0 mW
12.0 mW
C460MB290-0218
C460MB290-0214
C460MB290-0210
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
USA Tel: +1.919.313.5300
www.cree.com
3
CPR3CK Rev. C
Standard Bins for CxxxMB290-Sxx00 (continued)
MB-ꢀ0
C460MB290-Sꢀ000
C460MB290-0221
C460MB290-0217
C460MB290-0213
C460MB290-0209
C460MB290-0205
C460MB290-0222
C460MB290-0223
C460MB290-0219
C460MB290-0215
C460MB290-0211
C460MB290-0207
C460MB290-0224
C460MB290-0220
C460MB290-0216
C460MB290-0212
C460MB290-0208
18.0 mW
16.0 mW
14.0 mW
12.0 mW
10.0 mW
C460MB290-0218
C460MB290-0214
C460MB290-0210
C460MB290-0206
455 nm
457.5 nm
460 nm
462.5 nm
465 nm
Dominant Wavelength
MB-8
C460MB290-S0800
C460MB290-0221
C460MB290-0217
C460MB290-0213
C460MB290-0209
C460MB290-0205
C460MB290-0201
C460MB290-0222
C460MB290-0223
C460MB290-0219
C460MB290-0215
C460MB290-0211
C460MB290-0207
C460MB290-0203
C460MB290-0224
C460MB290-0220
C460MB290-0216
C460MB290-0212
C460MB290-0208
C460MB290-0204
18.0 mW
16.0 mW
14.0 mW
12.0 mW
10.0 mW
8.0 mW
C460MB290-0218
C460MB290-0214
C460MB290-0210
C460MB290-0206
C460MB290-0202
455 nm
457.5 nm
460 nm
Dominant Wavelength
462.5 nm
465 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
USA Tel: +1.919.313.5300
www.cree.com
4
CPR3CK Rev. C
Standard Bins for CxxxMB290-Sxx00 (continued)
MB-ꢀ4
C470MB290-Sꢀ400
C470MB290-0217
C470MB290-0213
C470MB290-0218
C470MB290-0219
C470MB290-0215
C470MB290-0220
C470MB290-0216
16.0 mW
14.0 mW
C470MB290-0214
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
MB-ꢀ2
C470MB290-Sꢀ200
C470MB290-0217
C470MB290-0213
C470MB290-0209
C470MB290-0218
C470MB290-0219
C470MB290-0215
C470MB290-0211
C470MB290-0220
C470MB290-0216
C470MB290-0212
16.0 mW
14.0 mW
12.0 mW
C470MB290-0214
C470MB290-0210
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
MB-ꢀ0
C470MB290-Sꢀ000
C470MB290-0217
C470MB290-0213
C470MB290-0209
C470MB290-0205
C470MB290-0218
C470MB290-0219
C470MB290-0215
C470MB290-0211
C470MB290-0207
C470MB290-0220
C470MB290-0216
C470MB290-0212
C470MB290-0208
16.0 mW
14.0 mW
12.0 mW
10.0 mW
C470MB290-0214
C470MB290-0210
C470MB290-0206
465 nm
467.5 nm
470 nm
472.5 nm
475 nm
Dominant Wavelength
MB-8
C470MB290-S0800
C470MB290-0217
C470MB290-0213
C470MB290-0209
C470MB290-0205
C470MB290-0201
C470MB290-0218
C470MB290-0219
C470MB290-0215
C470MB290-0211
C470MB290-0207
C470MB290-0203
C470MB290-0220
C470MB290-0216
C470MB290-0212
C470MB290-0208
C470MB290-0204
16.0 mW
14.0 mW
12.0 mW
10.0 mW
8.0 mW
C470MB290-0214
C470MB290-0210
C470MB290-0206
C470MB290-0202
465 nm
467.5 nm
470 nm
Dominant Wavelength
472.5 nm
475 nm
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
USA Tel: +1.919.313.5300
www.cree.com
5
CPR3CK Rev. C
Standard Bins for CxxxMB290-Sxx00 (continued)
505MB
C505MB290-S0600
C505MB290-0205
C505MB290-0206
C505MB290-0204
C505MB290-0202
9.0 mW
7.5 mW
6.0 mW
C505MB290-0203
C505MB290-0201
500nm
505nm
510nm
Dominant Wavelength
527MB
C527MB290-S0500
C527MB290-0207
C527MB290-0204
C527MB290-0201
C527MB290-0208
C527MB290-0209
C527MB290-0206
C527MB290-0203
7.0 mW
6.0 mW
5.0 mW
C527MB290-0205
C527MB290-0202
520 nm
525 nm
530 nm
535 nm
Dominant Wavelength
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
www.cree.com
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
6
CPR3CK Rev. C
Characteristic Curves
These are representative measurements for the MB product. Actual curves will vary slightly for the various radiant flux
and dominant wavelength bins.
Wavelength Shift vs Forward Current
Relative Intensity vs Forward Current
12.00
10.00
8.00
140
120
100
80
460nm
527nm
505nm
6.00
4.00
60
2.00
40
0.00
20
-2.00
-4.00
0
5
10
15
20
25
30
0
0
5
10
15
20
25
30
If (mA)
If (mA)
Forward Current vs Forward Voltage
Relative Intensity vs Peak Wavelength
100
30
25
20
15
10
5
80
60
40
20
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
500
400
600
Vf (V)
Wavelength (nm)
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
Copyright © 2005-2006 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree,
the Cree logo, G•SiC and MegaBright are registered trademarks, and MegaBright Max, MB Max and MB are trademarks of Cree,
Inc.
USA Tel: +1.919.313.5300
www.cree.com
7
CPR3CK Rev. C
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