CAS300M12BM2_14 [CREE]
Half-Bridge Module;
| 型号： | CAS300M12BM2_14 |
| 厂家： | 
CREE, INC |
| 描述： | Half-Bridge Module |
| 文件： | 总9页 (文件大小：1873K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
VDS
1.2 kV
CAS300M12BM2
1.2kV, 5.0 mΩ All-Silicon Carbide
Half-Bridge Module
Esw, Total @ 300A
RDS(on)
12.0 mJ
5.0 mΩ
C2M MOSFET and Z-RecTM Diode
Features
Package
62mm x 106mm x 30mm
•ꢀ UltraꢀLowꢀLoss
•ꢀ High-FrequencyꢀOperation
•ꢀ ZeroꢀReverseꢀRecoveryꢀCurrentꢀfromꢀDiode
•ꢀ ZeroꢀTurn-offꢀTailꢀCurrentꢀfromꢀMOSFET
•ꢀ Normally-off,ꢀFail-safeꢀDeviceꢀOperation
•ꢀ EaseꢀofꢀParalleling
•ꢀ CopperꢀBaseplateꢀandꢀAluminumꢀNitrideꢀInsulator
System Benefits
•ꢀ EnablesꢀCompactꢀandꢀLightweightꢀSystemsꢀ
•ꢀ HighꢀEfficiencyꢀOperation
•ꢀ MitigatesꢀOver-voltageꢀProtection
•ꢀ ReducedꢀThermalꢀRequirements
•ꢀ ReducedꢀSystemꢀCost
Applications
Part Number
Package
Marking
•ꢀ InductionꢀHeating
•ꢀ MotorꢀDrives
CAS300M12BM2
ꢀHalf-BridgeꢀModuleꢀ CAS300M12BM2
•ꢀ SolarꢀandꢀWindꢀInverters
•ꢀ UPSꢀandꢀSMPS
•ꢀ Tractionꢀ
ꢀ
ꢀꢀ
Maximum Ratings (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Drainꢀ-ꢀSourceꢀVoltage
Value
Unit
Test Conditions
Notes
VDSmax
VGSmax
VGSop
1.2
kV
V
Gateꢀ-ꢀSourceꢀVoltage
Gateꢀ-ꢀSourceꢀVoltage
-10/+25
AbsoluteꢀMaximumꢀvalues
-5/20
404
V
RecommendedꢀOperationalꢀValues
VGSꢀ=ꢀ20ꢀV,ꢀTCꢀ=ꢀ25ꢀ˚C
ID
ContinuousꢀDrainꢀCurrent
A
Fig.ꢀ24
285
VGSꢀ=ꢀ20ꢀV,ꢀTCꢀ=ꢀ90ꢀ˚C
PulseꢀwidthꢀtPꢀ=ꢀ200ꢀμsꢀRepetitionꢀrateꢀ
limitedꢀbyꢀTjmax,TCꢀ=ꢀ25˚C
ID(pulse)
TJmax
PulsedꢀDrainꢀCurrent
JunctionꢀTemperature
1500
150
A
˚C
TCꢀ,TSTG
CaseꢀandꢀStorageꢀTemperatureꢀRange
CaseꢀIsolationꢀVoltageꢀ
-40ꢀtoꢀ+125
˚C
Visol
4.0
kV
AC,ꢀ50ꢀHzꢀ,ꢀ1ꢀmin
LStray
PD
StrayꢀInductance
PowerꢀDissipation
14
nH
Measuredꢀbetweenꢀterminalsꢀ2ꢀandꢀ3
TCꢀ=ꢀ25ꢀ˚C,ꢀTJꢀ=ꢀ150ꢀ˚C
1660
W
Fig.ꢀ23
Subject to change without notice.
www.cree.com
1
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
V(BR)DSS
VGS(th)
Parameter
Drainꢀ-ꢀSourceꢀBreakdownꢀVoltage
GateꢀThresholdꢀVoltage
Min.
1.2
Typ.
Max. Unit
Test Conditions
VGS,ꢀꢀ=ꢀ0ꢀV,ꢀIDꢀ=ꢀ1ꢀmA
Note
kV
V
ꢀ
1.8
2.3
500
1000
1
VDSꢀ=ꢀ10ꢀV, IDꢀ=ꢀ15ꢀmA
Figꢀ7
2000
μA
VDSꢀ=ꢀ1.2ꢀkV,ꢀVGSꢀ=ꢀ0V
IDSS
IGSS
ZeroꢀGateꢀVoltageꢀDrainꢀCurrent
Gate-SourceꢀLeakageꢀCurrent
VDSꢀ=ꢀ1.2ꢀkV,VGSꢀ=ꢀ0V,ꢀTJꢀ=ꢀ150ꢀ˚C
VGSꢀ=ꢀ20ꢀV,ꢀVDSꢀ=ꢀ0V
100
nA
5.0
5.7
VGSꢀ=ꢀ20ꢀV,ꢀIDSꢀ=ꢀ300ꢀA
Fig.ꢀ4,ꢀ
5,ꢀ6
RDS(on)
OnꢀStateꢀResistance
mΩ
VGSꢀ=ꢀ20ꢀV,ꢀIDSꢀ=ꢀ300ꢀA,ꢀ
TJꢀ=ꢀ150ꢀ˚C
8.6
9.8
ꢀ
VDSꢀ=ꢀ20ꢀV, IDSꢀ=ꢀ300ꢀA
94.8
93.3
11.7
gfs
Transconductance
S
Fig.ꢀ8
ꢀ
VDSꢀ=ꢀ20ꢀV, IDꢀ=ꢀ300ꢀA,ꢀTJꢀ=ꢀ150ꢀ˚C
Ciss
Coss
Crss
Eon
InputꢀCapacitance
fꢀ=ꢀ200ꢀkHz,ꢀ
VDSꢀ=ꢀ600ꢀV,ꢀꢀ
VACꢀ=ꢀ25ꢀmV
Fig.ꢀ
16,ꢀ17
OutputꢀCapacitance
2.55
nF
ReverseꢀTransferꢀCapacitance
0.07
ꢀꢀꢀꢀꢀꢀꢀꢀ
Turn-OnꢀSwitchingꢀEnergy
6.05
mJ
VDDꢀ=ꢀ600ꢀV,ꢀVGSꢀ=ꢀ-5V/+20V
IDꢀ=ꢀ300ꢀA,ꢀRG(ext)ꢀ=ꢀ2.5ꢀΩ
Note:ꢀIECꢀ60747-8-4ꢀDefinitions
fꢀ=ꢀ200ꢀkHz,ꢀVACꢀ=ꢀ25ꢀmV
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
Fig.ꢀ
19,ꢀ20
ꢀꢀꢀꢀꢀꢀꢀꢀ
Turn-OffꢀSwitchingꢀEnergy
EOff
5.95
mJ
Ω
ꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀ
InternalꢀGateꢀResistance
Gate-SourceꢀCharge
Gate-DrainꢀCharge
RGꢀ(int)
QGS
3.0
166
475
1025
76
ꢀ
VDD= 800ꢀV,ꢀVGSꢀ=ꢀ-5V/+20V,
nC
Fig.ꢀ15
Fig.ꢀ25
QGD
QG
ꢀ
ID= 300ꢀA,ꢀPerꢀJEDEC24ꢀpgꢀ27
TotalꢀGateꢀCharge
td(on)
Turn-onꢀdelayꢀtimeꢀ
ns
VDDꢀ=ꢀ600V,ꢀꢀVGSꢀ=ꢀ-5/+20V,
IDꢀ=ꢀ300ꢀA,ꢀRG(ext)ꢀ=ꢀ2.5ꢀΩ,ꢀ
TimingꢀrelativeꢀtoꢀVDS
Note:ꢀIECꢀ60747-8-4,ꢀpgꢀ83ꢀ
Inductiveꢀloadꢀ
tr
td(off)ꢀ
tf
RiseꢀTime
68
168
43
ns
ns
ns
Turn-offꢀdelayꢀtime
FallꢀTime
Free-Wheeling SiC Schottky Diode Characteristics
Symbol
Parameter
DiodeꢀForwardꢀVoltage
TotalꢀCapacitiveꢀCharge
Min.
Typ.
Max. Unit
Test Conditions
Note
1.7
2.0
V
IFꢀ=ꢀ300ꢀA,ꢀVGSꢀ=ꢀ0
Fig.ꢀ9,ꢀ
10,ꢀ11
VSD
2.2
2.5
IFꢀ=ꢀ300ꢀA,ꢀTJꢀ=ꢀ150ꢀ˚C,ꢀVGSꢀ=ꢀ0
QC
3.2
μC
Note:ꢀTheꢀreverseꢀrecoveryꢀisꢀpurelyꢀcapacitive
Thermal Characteristics
Symbol
RthJCM
Parameter
Min.
Typ.
Max.
0.075
0.076
Unit
Test Conditions
Note
ThermalꢀResistanceꢀJuction-to-CaseꢀforꢀMOSFET
ThermalꢀResistanceꢀJuction-to-CaseꢀforꢀDiode
0.070
0.073
Tcꢀ=ꢀ90ꢀ˚C,ꢀPDꢀ=ꢀ150ꢀW
Tcꢀ=ꢀ90ꢀ˚C,ꢀPDꢀ=ꢀ130ꢀW
Fig.ꢀ27,ꢀ
˚C/W
28
RthJCD
Additional Module Data
Symbol
Parameter
Max.
Unit
Test Condtion
W
M
Weight
300
5
g
Nm
MountingꢀTorque
ClearanceꢀDistance
Toꢀheatsinkꢀandꢀterminals
Terminalꢀtoꢀterminal
12
mm
mm
mm
30
Terminalꢀtoꢀterminal
Terminalꢀtoꢀbaseplate
CreepageꢀDistance
40
CAS300M12BM2,Rev. -
2
Typical Performance
600
600
500
400
300
200
100
0
VGS = 20 V
VGS = 20 V
GS = 18 V
500
400
300
200
100
0
V
GS = 18 V
V
V
GS = 14 V
V
GS = 12 V
VGS = 14 V
VGS = 16 V
VGS = 16 V
VGS = 12 V
VGS = 10 V
VGS = 10 V
Conditions:
TJ = -40°C
Conditions:
TJ = 25°C
t
p = 200 µs
t
p = 200 µs
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
ꢀꢀꢀꢀFigureꢀ1.ꢀTypicalꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ-40ꢀ˚C
Figureꢀ2.ꢀTypicalꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ25ꢀ˚C
2.0
600
Conditions:
DS = 300 A
GS = 20 V
p = 200 µs
VGS = 20 V
GS = 18 V
VGS = 16 V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
I
V
t
VGS = 12 V
V
500
400
300
200
100
0
VGS = 14 V
VGS = 10 V
Conditions:
TJ = 150°C
t
p = 200 µs
-50
-25
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
Junction Temperature, TJ (°C)
Drain-Source Voltage VDS (V)
ꢀFigureꢀ4.ꢀNormalizedꢀOn-Resistanceꢀvs.ꢀTemperature
Figureꢀ3.ꢀTypicalꢀOutputꢀCharacteristicsꢀTJꢀ=ꢀ150ꢀ˚C
12
20
Conditions:
IDS = 300 A
tp = 200 µs
18
16
14
12
10
8
10
VGS = 12 V
Tj = - 40 °C
V
GS = 14 V
8
6
4
2
0
V
GS = 16 V
V
GS = 18 V
Tj = 150 °C
VGS = 20 V
Tj = 25 °C
6
4
Conditions:
DS = 300 A
I
2
tp = 200 µs
0
10
12
14
16
18
20
-50
-25
0
25
50
75
100
125
150
Junction Temperature, TJ (°C)
Gate-SourceVoltage, VGS (V)
Figureꢀ5.ꢀTypicalꢀOn-Resistanceꢀvs.ꢀTemperatureꢀforꢀ
VariousꢀGate-SourceꢀVoltageꢀ
Figureꢀ6.ꢀTypicalꢀOn-Resistanceꢀvs.ꢀGateꢀVoltage
CAS300M12BM2,Rev. -
3
Typical Performance
3.0
2.5
2.0
1.5
1.0
0.5
0.0
500
400
300
200
100
0
Conditions:
DS = 20 V
tp < 200 µs
Conditions
DS = 10 V
DS = 15mA
V
V
I
Typ
TJ = 150 °C
TJ = 25 °C
TJ = -40 °C
-50
-25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
Junction Temperature TJ (°C)
Gate-Source Voltage, VGS (V)
ꢀꢀꢀꢀFigureꢀ8.ꢀTransferꢀCharacteristicꢀforꢀVarious
JunctionꢀTemperatures
Figureꢀ7.ꢀThresholdꢀVoltageꢀvs.ꢀTemperature
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
VGS = 0 V
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = -2 V
VGS = -5 V
VGS = -2 V
Conditions:
TJ = -40 °C
p = 200 µs
Conditions:
TJ = 25°C
VGS = 0 V
VGS = -5 V
t
tp = 200 µs
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ10.ꢀDiodeꢀCharacteristicꢀatꢀ25ꢀ˚Cꢀ
ꢀFigureꢀ9.ꢀDiodeꢀCharacteristicꢀatꢀ-40ꢀ˚C
-4.0
-3.5
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
VGS = 0 V
-100
-200
-300
-400
-500
-600
-100
-200
-300
-400
-500
-600
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
V
GS = -2 V
VGS = 0 V
VGS = -5 V
Conditions:
TJ = 150°C
Conditions:
TJ = -40°C
p = 200 µs
tp = 200 µs
t
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ12.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ-40ꢀ
˚
C
Figureꢀ11.ꢀDiodeꢀCharacteristicꢀatꢀ150ꢀ˚Cꢀ
CAS300M12BM2,Rev. -
4
Typical Performance
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
-3.0
-2.5
-2.0
-1.5
-1.0
-0.5
0.0
0
0
VGS = 0 V
VGS = 0 V
-100
-200
-300
-400
-500
-600
-50
VGS = 5 V
V
GS = 5 V
VGS = 10 V
-100
-150
-200
-250
-300
VGS = 10 V
VGS = 15 V
VGS = 20 V
VGS = 15 V
V
GS = 20 V
Conditions:
TJ = 25°C
p = 200 µs
Conditions:
TJ = 150°C
tp = 200 µs
t
Drain-Source Voltage VDS (V)
Drain-Source Voltage VDS (V)
Figureꢀ14.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ150ꢀ
˚C
ꢀꢀꢀꢀFigureꢀ13.ꢀ3rdꢀQuadrantꢀCharacteristicꢀatꢀ25ꢀ
˚C
100
25
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 200 kHz
Conditions:
TJ = 25 °C
20
Ciss
I
V
DS = 300 A
DS = 1000 V
10
1
15
10
5
Coss
Crss
0.1
0.01
0
-5
0
50
100
Drain-Source Voltage, VDS (V)
150
200
0
200
400
600
800
1000
1200
Gate Charge (nC)
Figureꢀ16.ꢀTypicalꢀCapacitancesꢀvs.ꢀDrain-Sourceꢀ
Voltageꢀ(0ꢀ-ꢀ200ꢀV)
Figureꢀ15.ꢀTypicalꢀGateꢀChargeꢀCharacteristics
100
1.6
Conditions:
TJ = 25 °C
AC = 25 mV
f = 200 kHz
1.4
1.2
1
V
Ciss
10
Coss
1
0.8
0.6
0.4
0.2
0
Crss
0.1
0.01
0
200
400
600
800
1000
1200
0
200
400
600
800
1000
Drain-Source Voltage, VDS (V)
Drain to Source Voltage, VDS (V)
Figureꢀ17.ꢀTypicalꢀCapacitancesꢀvs.ꢀDrain-Sourceꢀ
Voltageꢀ(0ꢀ-ꢀ1ꢀkV)
Figureꢀ18.ꢀTypicalꢀOutputꢀCapacitorꢀStoredꢀEnergy
CAS300M12BM2,Rev. -
5
Typical Performance
20
30
25
20
15
10
5
Conditions:
TJ = 25 °C
18
Conditions:
TJ = 25 °C
V
R
V
DD = 600 V
G(ext) = 2.5 Ω
GS = -5/+20 V
V
R
V
DD = 800 V
G(ext) = 2.5 Ω
GS = -5/+20 V
16
14
12
10
8
L = 77 μH
L = 77 μH
ETotal
ETotal
6
EOn
EOn
4
EOff
EOff
2
0
0
0
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
400
450
Drain to Source Current, IDS (A)
Drain to Source Current, IDS (A)
ꢀꢀꢀꢀFigureꢀ19.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
DrainꢀCurrentꢀForꢀVDSꢀ=ꢀ600V,ꢀRGꢀ=ꢀ2.5ꢀΩꢀ
ꢀꢀꢀꢀFigureꢀ20.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.
DrainꢀCurrentꢀForꢀVDSꢀ=ꢀ800ꢀV,ꢀRGꢀ=ꢀ2.5ꢀΩ
120
100
80
60
40
20
0
14
12
10
8
Conditions:
TJ = 25 °C
ETotal
V
DD = 600 V
DS =300 A
GS = -5/+20 V
L = 77 μH
I
V
ETotal
EOff
6
EOn
EOff
EOn
Conditions:
VDD = 600 V
4
R
G(ext) = 2.5 Ω
DS =300 A
GS = -5/+20 V
L = 77 μH
I
V
2
0
0
5
10
15
20
25
30
35
40
45
0
25
50
75
100
125
150
175
External Gate Resistor R
G
(ext) (Ohms)
Junction Temperature, TJ (°C)
Figureꢀ21.ꢀꢀInductiveꢀSwitchingꢀEnergyꢀvs.ꢀRG(ext)
Figureꢀ22.ꢀInductiveꢀSwitchingꢀEnergyꢀvs.ꢀTemperature
1800
450
Conditions:
TJ ≤ 150 °C
Conditions:
TJ ≤ 150 °C
1600
1400
1200
1000
800
600
400
200
0
400
350
300
250
200
150
100
50
0
-25
0
25
50
75
100
125
-25
0
25
50
75
100
125
Case Temperature, TC (°C)
Case Temperature, TC (°C)
Figureꢀ23.ꢀꢀMaximumꢀPowerꢀDissipationꢀ(MOSFET)ꢀDerat-
ꢀꢀꢀꢀFigureꢀ24.ꢀꢀContinousꢀDrainꢀCurrentꢀDeratingꢀvsꢀCaseꢀ
Temperature
ingꢀvsꢀCaseꢀTemperature
CAS300M12BM2,Rev. -
6
Typical Performance
1200
Conditions:
TJ = 25 °C
1000.00
100.00
10.00
1.00
1 µs
V
DD = 600 V
DS = 300 A
GS = -5/+20 V
1000
800
600
400
200
0
100 µs
I
V
Limited by RDS On
1 ms
100 ms
td (off)
td (on)
tr
tf
0.10
Conditions:
C = 25 °C
D = 0,
T
Parameter: tp
0.01
0
5
10
15
20
25
30
35
40
0.1
1
10
100
1000
External Gate Resistor, RG(ext) (Ohms)
Drain-Source Voltage, VDS (V)
ꢀꢀꢀꢀFigureꢀ26.ꢀꢀContinousꢀDrainꢀCurrentꢀDeratingꢀvsꢀCaseꢀ
Temperature
ꢀꢀꢀꢀFigureꢀ25.ꢀTimingꢀvs.ꢀRG(ext)
100E-3
10E-3
1E-3
100E-3
0.5
0.5
0.3
0.3
0.1
0.1
10E-3
0.05
0.05
0.02
0.02
1E-3
SinglePulse
0.01
SinglePulse
0.01
100E-6
10E-6
100E-6
10E-6
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
1E-6
10E-6
100E-6
1E-3
Time, tp (s)
10E-3
100E-3
1
Figureꢀ28.ꢀDiodeꢀJunctionꢀtoꢀCaseꢀThermalꢀImpedance
Figureꢀ27.ꢀMOSFETꢀJunctionꢀtoꢀCaseꢀThermalꢀImpedance
CAS300M12BM2,Rev. -
7
Schematic
Package Dimensions (mm)
CAS300M12BM2,Rev. -
8
Notes
•ꢀ RoHSꢀCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
•ꢀ REAChꢀCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemi-
cal Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•ꢀ This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiacꢀdefibrillatorsꢀorꢀsimilarꢀemergencyꢀmedicalꢀequipment,ꢀaircraftꢀnavigationꢀorꢀcommunicationꢀorꢀcontrolꢀ
systems,ꢀairꢀtrafficꢀcontrolꢀsystems.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Fax: +1.919.313.5451
www.cree.com/power
9
CAS300M12BM2 Rev. -
相关型号：
©2020 ICPDF网 联系我们和版权申明