CGHV14800F [CREE]

800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems;


型号：	CGHV14800F
厂家：	CREE, INC
描述：	800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems
文件：	总9页 (文件大小：765K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CGHV14800

800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems

Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed

speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities, which makes the

CGHV14800 ideal for 1.2 - 1.4 GHz pulsed L-Band radar ampliﬁer applications, such as air trafﬁc

control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking

radars and long range survelliance radars. The GaN HEMT typically operates at 50 V, typically

deliverying >65% drain efﬁciency. The package options are ceramic/metal ﬂange package.

Typical Performance Over 1.2-1.4 GHz ^(T_C^{= 25˚C)}of Demonstration Ampliﬁer

Parameter

1.2 GHz

1.25 GHz

1.3 GHz

1.35 GHz

1.4 GHz

Units

Output Power

900

870

920

Power Gain

Drain Efﬁciency

Note:

14.5

14.0

Measured in the CGHV14800-AMP ampliﬁer circuit, under 3 μs pulse width, 3% duty cycle, P_IN= 45 dBm.

Features

•

Reference design ampliﬁer 1.2 - 1.4 GHz Operation

800 W Minimum Output Power

14 dB Power Gain

69% Typical Drain Efﬁciency

<0.3 dB Pulsed Amplitude Droop

Internally input and output matched

Subject to change without notice.

www.cree.com/rf

Absolute Maximum Ratings (not simultaneous)

Parameter

Symbol

Rating

Units

Conditions

Drain-Source Voltage

V_DSS

125

Volts

25˚C

Gate-to-Source Voltage

V_GS

-10, +2

-65, +150

225

Volts

˚C

25˚C

Storage Temperature

T_STG

Operating Junction Temperature

Maximum Forward Gate Current

Maximum DC Current¹

˚C

I_GMAX

I_DCMAX

T_S

132

25˚C

Soldering Temperature²

245

˚C

Screw Torque

in-oz

˚C/W

˚C

CW Thermal Resistance, Junction to Case³

Pulsed Thermal Resistance, Junction to Case³

Case Operating Temperature⁴

R_θJC

T_C

0.44

P_DISS= 398 W, 50˚C

0.10

P_DISS= 664 W, 3 µsec, 3%, 85˚C

P_DISS= 664 W, 100 µsec, 10%

-40, +100

Note:

¹Current limit for long term, reliable operation

²Refer to the Application Note on soldering at http://www.cree.com/rf/document-library

Measured for the CGHV14800F

See also, the Power Dissipation De-rating Curve on Page x

Electrical Characteristics

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics¹(T_C= 25˚C)

Gate Threshold Voltage

V_GS(th)

V_GS(Q)

I_DS

-3.8

–

-3.0

-2.7

123.5

–

-2.3

–

V_DC

V_DS= 10 V, I_D= 83.6 mA

V_DS= 50 V, I_D= 500 mA

V_DS= 6.0 V, V_GS= 2.0 V

V_GS= -8 V, I_D= 83.6 mA

Gate Quiescent Voltage

Saturated Drain Current²

80.3

150

–

Drain-Source Breakdown Voltage

V_BR

–

V_DC

RF Characteristics³(T_C= 25˚C, F₀= 1.3 GHz unless otherwise noted)

Output Power

P_OUT

D_E

–

900

–

V_DD= 50 V, I_DQ= 800 mA, P_IN= 45 dBm

Drain Efﬁciency

Power Gain

G_P

14.5

-0.3

Pulsed Amplitude Droop

V_DD= 50 V, I_DQ= 800 mA

No damage at all phase angles,

V_DD= 50 V, I_DQ= 800 mA, P_IN= 45 dBm Pulsed

Output Mismatch Stress

Dynamic Characteristics

Input Capacitance

VSWR

–

5 : 1

–

C_GS

C_DS

C_GD

–

326

643

3.9

–

V_DS= 50 V, V_gs= -8 V, f = 1 MHz

Output Capacitance

Feedback Capacitance

Notes:

¹Measured on wafer prior to packaging.

²Scaled from PCM data.

³Measured in CGHV14800-AMP. Pulse Width = 3 μS, Duty Cycle = 3%.

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

CGHV14800 Rev 0.2

Typical Pulsed Performance

Figure 1. - Saturated Output Power and Drain Efﬁciency vs Frequency

of the CGHV14800F in the CGHV14800F-AMP

V_DD= 50 V, I_DQ= 800 mA, Pulse Width = 3 μS, Duty Cycle = 3%

60.5

60.0

59.5

59.0

58.5

58.0

Output Power

Psat

Pout, Pin=44dBm

DEFF at Psat

Deff, Pin = 44dBm

1.0

1.1

1.2

1.3

1.4

1.5

1.6

Frequency (GHz)

Figure 2. - Small Signal Gain and Return Losses vs Frequency

of the CGHV14800F in the CGHV14800F-AMP

V_DD= 50 V, I_DQ= 800 mA, Pulse Width = 100 μS, Duty Cycle = 5%

-5

-10

-15

-20

S21

S11

S22

1.0

1.1

1.2

1.3

1.4

1.5

1.6

Frequency

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

CGHV14800 Rev 0.2

CGHV14800F-AMP Demonstration Ampliﬁer Circuit Bill of Materials

Designator

Description

Qty

RES, 5.1,OHM, +/- 1%, 0.25W, 1206

RES,1/16W,0603,1%,4.99K OHMS

RES 536OHM +/- 1%, 0.25W,1206

INDUCTOR,CHIP,6.8nH,0603 SMT

CAP, 100 PF +/- 5%,, 250V, 0805, ATC 600F

CAP, 2.0pF, +/-0.1pF, 0603, ATC

CAP, 33pF, +/-5%, 0603, ATC

C1, C14, C15

C16

C3, C8

C4, C9

C5, C10

CAP, 470PF, 5%, 100V, 0603, X7R

CAP,33000PF, 0805,100V, X7R

CAP, 1.0UF, 100V, 10%, X7R, 1210

CAP 10UF 16V TANTALUM

CAP, 33 PF +/- 5%,, 250V, 0805, ATC 600F

CAP, 3300 UF, +/-20%, 100V, ELECTROLYTIC

CAP 10uF 16V TANTALUM

C11

C14

J1,J2

CONN, SMA, PANEL MOUNT JACK, FLANGE, 4-HOLE, BLUNT POST

HEADER RT>PLZ .1CEN LK 9POS

CONNECTOR ; SMB, Straight, JACK,SMD

CABLE ,18 AWG, 4.2

PCB, TMM10i, 0.025” THK, CGHV14800 1.2-1.4GHZ

2-56 SOC HD SCREW 1/4 SS

#2 SPLIT LOCKWASHER SS

CGHV14800F

CGHV14800F-AMP Demonstration Ampliﬁer Circuit

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

CGHV14800 Rev 0.2

CGHV14800-AMP Demonstration Ampliﬁer Circuit Outline

CGHV14800-AMP Demonstration Ampliﬁer Circuit Schematic

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

CGHV14800 Rev 0.2

Product Dimensions CGHV14800F (Package Type — 440117)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

CGHV14800 Rev 0.2

Part Number System

CGHV14800F

Type

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

Product Line

Parameter

Value

Units

Upper Frequency¹

Power Output

1.4

GHz

800

F = Flanged

P = Package

Type

Table 1.

Note¹: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code

Code Value

1A = 10.0 GHz

2H = 27.0 GHz

Examples:

Table 2.

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

CGHV14800 Rev 0.2

Product Ordering Information

Order Number

Description

Unit of Measure

Image

CGHV14800F

GaN HEMT

Each

CGHV14800-TB

Test board without GaN HEMT

Each

CGHV14800F-AMP

Test board with GaN HEMT installed

Each

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

CGHV14800 Rev 0.2

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/rf

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing & Sales

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.407.5639

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

CGHV14800 Rev 0.2

CGHV14800F [CREE]

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