CGHV1F006S-AMP3 [CREE]
6 W, DC - 18 GHz, 40V, GaN HEMT;
| 型号： | CGHV1F006S-AMP3 |
| 厂家： | 
CREE, INC |
| 描述： | 6 W, DC - 18 GHz, 40V, GaN HEMT |
| 文件： | 总22页 (文件大小：5739K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CGHV1F006S
6 W, DC - 18 GHz, 40V, GaN HEMT
Cree’s CGHV1F006S is an unmatched, gallium nitride (GaN) high electron mobility transist
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilitie
The device can be deployed for L, S, C, X and Ku-Band amplifier applications. The datashe
specifications are based on a C-Band (5.5 - 6.5 GHz) amplifier. Additional applicatio
circuits are available for C-Band at 5.8 GHz - 7.2 GHz and X-Band at 7.9 - 8.4 GHz and 8.5
9.6 GHz. The CGHV1F006S operates on a 40 volt rail circuit while housed in a 3mm x 4mm
surface mount, dual-flat-no-lead (DFN) package. Under reduced power, the transistor can
operate below 40V to as low as 20V VDD, maintaining high gain and efficiency.
Typical Performance 5.5-6.5 GHz (TC = 25˚C) , 40 V
Parameter
5.5 GHz
6.0 GHz
6.5 GHz
Units
Small Signal Gain
15.4
16.5
17.8
dB
Output Power @ PIN = 28 dBm
Drain Efficiency @ PIN = 28 dBm
Note:
38.6
55
39.3
57
39.0
52
dBm
%
Measured in the CGHV1F006S-AMP application circuit. Pulsed 100 µs 10% duty.
Features for 40 V in CGHV1F006S-AMP
•
•
•
•
•
•
Up to 18 GHz Operation
8 W Typical Output Power
17 dB Gain at 6.0 GHz
15 dB Gain at 9.0 GHz
Application circuits for 5.8 - 7.2 GHz, 7.9 - 8.4 GHz, and 8.5 - 9.6 GHz.
High degree of APD and DPD correction can be applied
Listing of Available Hardware Application Circuits / Demonstration Circuits
Application Circuit
CGHV1F006S-AMP1
CGHV1F006S-AMP2
CGHV1F006S-AMP3
CGHV1F006S-AMP4
Operating Frequency
5.85 - 7.2 GHz
7.9 - 8.4 GHz
Amplifier Class
Class A/B
Operating Voltage
40 V
40 V
40 V
20 V
Class A/B
8.5 - 9.6 GHz
Class A/B
4.9 - 5.9 GHz
Class A/B
Subject to change without notice.
www.cree.com/rf
1
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter
Symbol
VDSS
Rating
100
Units
Volts
Volts
˚C
Notes
25˚C
25˚C
Drain-Source Voltage
Gate-to-Source Voltage
VGS
-10, +2
-65, +150
225
Storage Temperature
TSTG
Operating Junction Temperature
Maximum Forward Gate Current
Maximum Drain Current1
Soldering Temperature2
Case Operating Temperature3,4
Thermal Resistance, Junction to Case5
T
˚C
J
IGMAX
IDMAX
TS
1.2
mA
A
25˚C
25˚C
0.95
245
˚C
TC
-40, +150
14.5
˚C
RθJC
˚C/W
85˚C
Note:
1 Current limit for long term, reliable operation
2 Refer to the Application Note on soldering at www.cree.com/rf/document-library
3 Simulated at PDISS = 2.4 W
4 TC = Case temperature for the device. It refers to the temperature at the ground tab underneath the package. The PCB will add additional thermal
resistance.
5 The RTH for Cree’s application circuit, CGHV1F006S-AMP, with 31 (Ø11 mil) via holes designed on a 20 mil thick Rogers 5880 PCB, is 3.9°C/W. The total RTH
from the heat sink to the junction is 14.5°C/W + 3.9°C/W = 18.4°C/W.
Electrical Characteristics (TC = 25˚C) - 40 V Typical
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
DC Characteristics1
Gate Threshold Voltage
VGS(th)
VGS(Q)
IDS
-3.6
–
-3.0
-2.7
-1.0
–
-2.4
–
VDC
VDC
A
VDS = 10 V, ID = 1.2 mA
VDS = 40 V, ID = 60 mA
VDS = 6.0 V, VGS = 2.0 V
VGS = -8 V, ID = 1.2 mA
Gate Quiescent Voltage
Saturated Drain Current2
Drain-Source Breakdown Voltage
–
–
V(BR)DSS
100
–
VDC
RF Characteristics3 (TC = 25˚C, F0 = 6.0 GHz unless otherwise noted)
Gain
G
POUT
η
–
–
–
16
38.5
55
-
–
-
dB
dBm
%
VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Output Power4
Drain Efficiency4
No damage at all phase angles,
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Output Mismatch Stress4
VSWR
-
10 : 1
-
Y
Dynamic Characteristics
Input Capacitance5
CGS
CDS
CGD
–
–
–
1.3
–
–
–
pF
pF
pF
VDS = 40 V, Vgs = -8 V, f = 1 MHz
VDS = 40 V, Vgs = -8 V, f = 1 MHz
VDS = 40 V, Vgs = -8 V, f = 1 MHz
Output Capacitance5
0.31
0.04
Feedback Capacitance
Notes:
1 Measured on wafer prior to packaging
2 Scaled from PCM data
3 Measured in CGHV1F006S-AMP
4 Pulsed 100 µs, 10% duty cycle
5 Includes package
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
2
CGHV1F006S Rev 2.2
Electrical Characteristics When Tested in CGHV1F006S-AMP1 at C-Band Under OQPSK
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics1 (TC = 25˚C, F0 = 5.8 - 7.2 GHz unless otherwise noted)
Gain
G
POUT
η
–
–
–
17.5
39
-
–
-
dB
dBm
%
VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 27 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 27 dBm
Output Power2
Drain Efficiency2
55
OQPSK3
ACLR
-
-36
-
dBc
VDD = 40 V, IDQ = 60 mA, POUT = 33 dBm
No damage at all phase angles,
VDS = 40 V, Vgs = -8 V, PIN = 27 dBm
Output Mismatch Stress2
VSWR
–
10 : 1
–
Y
Notes:
1 Measured in CGHV1F006S-AMP1 Application Circuit
2 Pulsed 100 µs, 10% duty cycle
3 OQPSK modulated signal, 1.6 msps, PN23, Alpha Filter = 0.2 Offset = 1.6 MHz
Typical Performance - CGHV1F006S-AMP1 at C-Band Under OQPSK
Figure 1. - Typical Small Signal Response of CGHV1F006S-AMP1 Application Circuit
VDD = 40 V, IDQ = 60 mA
30
20
10
0
-10
-20
S11
S21
S22
-30
5.0
5.5
6.0
6.5
7.0
7.5
8.0
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
3
CGHV1F006S Rev 2.2
Typical Performance in Application Circuit CGHV1F006S-AMP1
Figure 2. - Typical Gain, Efficiency and OQPSK Performance vs Frequency
POUT = 33 dBm. VDD = 40 V, IDQ = 60 mA
40
35
30
25
20
15
10
5
0
Efficiency
Gain
-5
Efficiency
Offset
-10
-15
-20
-25
-30
-35
-40
Gain
Offset
0
5.8
6.0
6.2
6.4
6.6
6.8
7.0
7.2
Frequency (GHz)
Figure 3. - Typical Gain, Efficiency and OQPSK Performance vs Input Power OQPSK Transfer
Frequency = 7.2 GHz, VDD = 40 V, IDQ = 60 mA
35
30
25
20
15
10
5
-15
-20
-25
-30
-35
-40
-45
-50
DEff
Gain_
-Oset_
+Oset_
Efficiency
Gain
Oset
0
10
15
20
25
30
35
Input Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
4
CGHV1F006S Rev 2.2
Typical Performance in Application Circuit CGHV1F006S-AMP1
Figure 4. - Typical Pulsed Power Response
VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 27 dBm
40.0
39.5
39.0
38.5
38.0
37.5
37.0
36.5
36.0
75
70
65
60
55
50
45
40
35
Output Power
Drain Efficiency
5.70
5.90
6.10
6.30
6.50
6.70
6.90
7.10
7.30
Frequency (GHz)
CGHV1F006S-AMP1 Application Circuit
Bill of Materials, OQPSK
CGHV1F006S-AMP1 Application Circuit
Designator
Description
Qty
R1
R2
RES, 15, OHM, +1/-1%, 1/16 W, 0402
RES, 100, OHM, +1/-1%, 1/16 W, 0603
CAP, 1.8 pF, ±0.1 pF, 0402, ATC
CAP, 2.0 pF, ±0.1 pF, 0402, ATC
CAP, 1.5 pF, ±0.1 pF, 0402, ATC
CAP, 10 pF, ±5%, 0603, ATC
1
1
2
1
2
1
2
2
1
1
1
1
2
1
1
1
C1, C14
C2
C3, C8
C4
C5, C10
C6, C11
C7
CAP, 470 pF, 5%, 100 V, 0603, X
CAP, 33000 pF, 0805, 100V, X7R
CAP, 10 UF, 16 V, TANTALUM
C9
CAP, 20 pF, ±5%, 0603, ATC
C12
CAP, 1.0 UF, 100V, 10% X7R, 1210
CAP, 33 UF, 20%, G CASE
C13
J1, J2
CONN, SMA, PANEL MOUNT JACK, FLANGE
PCB, RT5880, 0.020” THK, CGHV1F006S
HEADER RT>PLZ .1CEN LK 5POS
QFN TRANSISTOR CGHV1F006S
J3
Q1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
5
CGHV1F006S Rev 2.2
CGHV1F006S-AMP1 Application Circuit Schematic, OQPSK
Vg=-2.0V to -3.5V typ
GND
Vd=+40V
5
4
3
2
1
J3
C8 C9
1.5 pF 20 pF
C11
0.033
C12 C13
33
C10
470 pF
1
C3
1.5 pF
C7
10
C6
0.033
C5
470 pF
C4
10 pF
R2
100 Ohm
C14
1.8 pF
R1
15 Ohm
C1
1.8 pF
J2
2
Q1
1
J1
3
C2
2.0 pF
CGHV1F006S-AMP1 Application Circuit Outline, OQPSK
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
6
CGHV1F006S Rev 2.2
Electrical Characteristics When Tested in CGHV1F006S-AMP2 at X-Band, SATCOM
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics1 (TC = 25˚C, F0 = 7.9 - 8.4 GHz unless otherwise noted)
Gain
G
POUT
η
–
–
–
15
39
55
-
–
-
dB
dBm
%
VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Output Power2
Drain Efficiency2
OQPSK3
ACLR
-
-37
-
dBc
VDD = 40 V, IDQ = 60 mA, POUT = 33 dBm
No damage at all phase angles,
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Output Mismatch Stress2
VSWR
–
10 : 1
–
Y
Notes:
1 Measured in CGHV1F006S-AMP2 Application Circuit
2 Pulsed 100 µs, 10% duty cycle
3 OQPSK modulated signal, 1.6 msps, PN23, Alpha Filter = 0.2 Offset = 1.6 MHz
Typical Performance in Application Circuit CGHV1F006S-AMP2 at X-Band, SATCOM
Figure 5. - Typical Small Signal Response of CGHV1F006S-AMP2 Application Circuit
VDD = 40 V, IDQ = 60 mA
30
20
10
0
-10
S21
-20
S11
S22
-30
7.0
7.2
7.4
7.6
7.8
8.0
8.2
8.4
8.6
8.8
9.0
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
7
CGHV1F006S Rev 2.2
Typical Performance in Application Circuit CGHV1F006S-AMP2
Figure 6. - Typical OQPSK Response
VDD = 40 V, IDQ = 60 mA, 1.6 MSPS, POUT = 33 dBm
40
-30
-31
-32
-33
-34
-35
-36
-37
-38
35
Drain Efficiency
30
Gain
25
Drain Efficiency
20
15
10
5
ACLR
Gain
ACLR
0
7.90
7.95
8.00
8.05
8.10
8.15
8.20
8.25
8.30
8.35
8.40
Frequency (GHz)
Typical Performance in Application Circuit CGHV1F006S-AMP2
Figure 7. - OQPSK Transfer Response
VDD = 40 V, IDQ = 60 mA, 1.6 MSPS, Frequency = 8.4 GHz
35
30
25
20
15
10
5
-10
-15
-20
-25
-30
-35
-40
-45
Gain
Eff
-Oset
+Oset
0
15
20
25
30
35
40
Output Power (dBm)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
8
CGHV1F006S Rev 2.2
Typical Performance in Application Circuit CGHV1F006S-AMP2
Figure 8. - Typical Pulsed Power Response
VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 28 dBm
40.0
39.5
39.0
38.5
38.0
37.5
37.0
36.5
36.0
75
70
65
60
55
50
45
40
35
Output Power
Drain Efficiency
Output Power
Drain
Efficiency
7.80
7.90
8.00
8.10
8.20
8.30
8.40
8.50
Frequency (GHz)
CGHV1F006S-AMP2 Application Circuit
Bill of Materials, SATCOM
CGHV1F006S-AMP2 Application Circuit
Designator
Description
Qty
R1
R2
RES, 15, OHM, +1/-1%, 1/16 W, 0402
RES, 100, OHM, +1/-1%, 1/16 W, 0603
CAP, 1.0 pF, ±0.05 pF, 0402, ATC
CAP, 10 pF, ±5%, 0603, ATC
1
1
3
2
1
2
2
C2, C3, C8
C1, C14
C4
CAP, 10pF, ±5%, 0603, X
C5,C10
C6, C11
CAP, 470pF, 5%, 100V, 0603, X
CAP, 33000 pF, 0805, 100V, X7R
C7
C9
CAP, 10 UF, 16 V, TANTALUM
CAP, 20 pF, ±5%, 0603, ATC
CAP, 1.0 UF, 100V, 10% X7R, 1210
CAP, 33 UF, 20%, G CASE
1
1
1
1
2
1
1
C12
C13
J1, J2
J3
CONN, SMA, PANEL MOUNT JACK, FLANGE
HEADER RT>PLZ .1CEN LK 5POS
Q1
QFN TRANSISTOR CGHV1F006S
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
9
CGHV1F006S Rev 2.2
CGHV1F006S-AMP2 Application Circuit Schematic, SATCOM
Vg=-2.0V to -3.5V typ
GND
Vd=+40V
5
4
3
2
1
J3
C8 C9
1.0 pF 20 pF
C11
0.033
C12 C13
33
C10
470 pF
1
C3
1.0 pF
C7
10
C6
0.033
C5
470 pF
C4
10 pF
R2
100 Ohm
C14
1.0 pF
R1
15 Ohm
J2
C1
1.0 pF
2
Q1
1
J1
3
C2
1.0 pF
CGHV1F006S-AMP2 Application Circuit Outline, SATCOM
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
10
CGHV1F006S Rev 2.2
Electrical Characteristics When Tested in CGHV1F006S-AMP3 at X-Band, RADAR
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics1 (TC = 25˚C, F0 = 8.5 - 9.6 GHz unless otherwise noted)
Gain
G
POUT
η
–
–
–
–
14.5
38.5
52
-
dB
dBm
%
VDD = 40 V, IDQ = 60 mA, PIN = 0 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
VDD = 40 V, IDQ = 60 mA, PIN = 28 dBm
Output Power2
Drain Efficiency2
Output Mismatch Stress2
Notes:
–
-
VSWR
10 : 1
–
Y
1 Measured in CGHV1F006S-AMP3 Application Circuit
2 Pulsed 100 µs, 10% duty cycle
Typical Performance in Application Circuit CGHV1F006S-AMP3 at X-Band, RADAR
Figure 9. - Typical Small Signal Response
VDD = 40 V, IDQ = 60 mA
30
20
10
0
-10
-20
S21
S11
S22
-30
7.5
8.0
8.5
9.0
9.5
10.0
10.5
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
11
CGHV1F006S Rev 2.2
Typical Performance in Application Circuit CGHV1F006S-AMP3
Figure 10. - Typical Pulsed Power Response
VDD = 40 V, IDQ = 60 mA, 100 µs, 10% Duty, PIN = 28 dBm
40.0
39.5
39.0
38.5
38.0
37.5
37.0
36.5
36.0
75
70
65
60
55
50
45
40
35
Output Power
Drain Efficiency
Output Power
Drain Efficiency
8.4
8.6
8.8
9.0
9.2
9.4
9.6
Frequency (GHz)
CGHV1F006S-AMP3 Application Circuit
Bill of Materials, RADAR
CGHV1F006S-AMP3 Application Circuit
Designator
Description
Qty
R1
R2
RES, 15, OHM, +1/-1%, 1/16 W, 0402
RES, 100, OHM, +1/-1%, 1/16 W, 0603
CAP, 1.0 pF, ±0.05 pF, 0603, ATC
CAP, 1.0 pF, ±0.05 pF, 0402, ATC
CAP, 0.8 pF, ±0.05 pF, 0402, ATC
CAP, 10 pF, ±5%, 0603, ATC
1
1
2
1
2
1
2
2
1
1
1
1
2
1
1
C1, C14
C2
C3, C8
C4
C5, C10
C6, C11
C7
CAP, 470 pF, 5%, 100 V, 0603, X
CAP, 33000 pF, 0805, 100V, X7R
CAP, 10 UF, 16 V, TANTALUM
C9
CAP, 20 pF, ±5%, 0603, ATC
C12
CAP, 1.0 UF, 100V, 10% X7R, 1210
CAP, 33 UF, 20%, G CASE
C13
J1, J2
J3
CONN, SMA, PANEL MOUNT JACK, FLANGE
HEADER RT>PLZ .1CEN LK 5POS
QFN TRANSISTOR CGHV1F006S
Q1
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
12
CGHV1F006S Rev 2.2
CGHV1F006S-AMP3 Application Circuit Schematic, RADAR
Vg=-2.0V to -3.5V typ
GND
Vd=+40V
5
4
3
2
1
J3
C8 C9
0.8 pF 20 pF
C11
0.033
C12 C13
33
C10
470 pF
1
C3
0.8 pF
C7
10
C6
0.033
C5
470 pF
C4
10 pF
R2
100 Ohm
C14
1.0 pF
R1
15 Ohm
C1
1.0 pF
J2
2
Q1
1
J1
3
C2
1.0 pF
CGHV1F006S-AMP3 Application Circuit Outline, RADAR
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
13
CGHV1F006S Rev 2.2
Electrical Characteristics When Tested in CGHV1F006S-AMP4 at 802.11
Characteristics
Symbol
Min.
Typ.
Max.
Units
Conditions
RF Characteristics1 (TC = 25˚C, F0 = 4.9 - 5.9 GHz unless otherwise noted)
Gain
G
–
–
13
27
-
-
dB
VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm
VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm
Drain Efficiency2
η
%
OQPSK3
ACLR
-
-43
-
dBc
VDD = 20 V, IDQ = 30 mA, POUT = 27 dBm
No damage at all phase angles,
VDD = 20 V, IDQ = 30 mA, PIN = 27 dBm
Output Mismatch Stress2
VSWR
–
10 : 1
–
Y
Notes:
1 Measured in CGHV1F006S-AMP4 Application Circuit
2 Single carrier WCDMA, 3GPP Test Model 1, G4 DPCH, 45% clipping, PAR = 7.5 dB @ 0.01% probability on CCDF
Typical Performance - CGHV1F006S-AMP4 at 802.11
Figure 11. - Typical Small Signal Response
VDD = 20 V, IDQ = 30 mA
30
20
10
0
-10
-20
-30
S11
S21
S22
4.0
4.5
5.0
5.5
6.0
6.5
7.0
Frequency (GHz)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
14
CGHV1F006S Rev 2.2
Typical Performance in Application Circuit CGHV1F006S-AMP4
Figure 12. - Typical Gain, Efficiency and WCDMA Performance vs Frequency
VDD = 20 V, IDQ = 30 mA, POUT = 27 dBm
40
35
30
25
20
15
10
5
-37
-38
-39
-40
-41
-42
-43
-44
-45
Gain
Drain Efficiency
ACLR
Drain Efficiency
ACLR
Gain
0
4.9
5.0
5.1
5.2
5.3
5.4
5.5
5.6
5.7
5.8
5.9
Frequency (GHz)
CGHV1F006S-AMP4 Application Circuit
Bill of Materials at 802.11
CGHV1F006S-AMP4 Application Circuit
Designator
Description
Qty
R1, R3
R2
RES, 1, OHM, +/-1%, 1/16 W, 0402
RES, 51.1, OHM, +/-1%, 1/16W, 0603
CAP, 1.8 pF, +/-0.1 pF, 0603, ATC
CAP, 0.2 pF, +/-0.05 pF, 0402, ATC
CAP, 470 pF, 5%, 100 V, 0603, X
2
1
3
1
3
C2, C6, C11
C1
C3, C7, C12
C4, C8, C13
CAP, 33000 pF, 0805, 100 V, X7R
3
C5
C15
CAP, 10 UF, 16 V, TANTALUM
CAP, 6.8 pF, ±0.25 pF, 100 V, 0603
CAP, 1.0 UF, 100V, 10% X7R, 1210
CAP, 33 UF, 20%, G CASE
1
1
2
1
2
1
1
1
4
4
1
C9, C14
C10
J1, J2
CONN, SMA, PANEL MOUNT JACK, FLANGE
PCB, RT5880, 0.020” THK, CGHV1F006S
BASEPLATE, CGH35015, 2.60 X 1.7
HEADER RT>PLZ .1CEN LK 5POS
2-56 SOC HD SCREW 1/4 SS
J3
#2 SPLIT LOCKWASHER SS
Q1
QFN TRANSISTOR CGHV1F006S
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
15
CGHV1F006S Rev 2.2
CGHV1F006S-AMP4 Application Circuit Schematic
CGHV1F006S-AMP4 Application Circuit Outline
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
16
CGHV1F006S Rev 2.2
CGHV1F006S Power Dissipation De-rating Curve
Figure 13. - CGHV1F006S Transient Power Dissipation De-Rating Curve
12
10
8
Note 1
6
4
2
0
0
25
50
75
100
125
150
175
200
225
250
Maximum CaseTemperature ( C)
Note 1. Area exceeds Maximum Case Temperature (See Page 2).
Electrostatic Discharge (ESD) Classifications
Parameter
Symbol
HBM
Class
Test Methodology
JEDEC JESD22 A114-D
JEDEC JESD22 C101-C
Human Body Model
Charge Device Model
1A (> 250 V)
CDM
2 (125 V to 250 V)
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
17
CGHV1F006S Rev 2.2
Source and Load Impedances
D
Z Source
Z Load
G
S
Frequency (GHz)
Z Source
Z Load
1
3
49.67 + j32.81
11.54 + j3.96
5.94 - j17.97
184.11 + j6.66
38.83 + j56.37
13.03 + j16.16
11.79 - j17.43
16.39 - j46.22
163.61 - j268.44
6
10
12
15
11.87 - j77.62
47.42 - j205.35
33.78 + j251.03
Note1: VDD = 40 V, IDQ = 60 mA
Note2: Impedances are extracted from source and load pull data derived from the transistor.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
18
CGHV1F006S Rev 2.2
Product Dimensions CGHV1F006S (Package 3 x 4 DFN)
Pin
Input/Output
1
2
GND
NC
3
RF IN
RF IN
NC
4
5
6
GND
GND
NC
7
8
9
RF OUT
RF OUT
NC
10
11
12
GND
Note: Leadframe finish for 3x4 DFN package is Nickel/Palladium/Gold. Gold is the outer layer.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
19
CGHV1F006S Rev 2.2
Part Number System
CGHV1F006S
Package
Power Output (W)
Upper Frequency (GHz)
Cree GaN High Voltage
Parameter
Value
Units
Upper Frequency1
Power Output
Package
15.0
GHz
6
W
-
Surface Mount
Table 1.
Note1: Alpha characters used in frequency code
indicate a value greater than 9.9 GHz. See Table
2 for value.
Character Code
Code Value
A
B
C
D
E
0
1
2
3
4
5
6
7
8
9
F
G
H
J
K
1A = 10.0 GHz
2H = 27.0 GHz
Examples:
Table 2.
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
20
CGHV1F006S Rev 2.2
Product Ordering Information
Order Number
Description
Unit of Measure
Image
CGHV1F006S
GaN HEMT
Each
Test board with GaN HEMT installed,
5.85 - 7.2 GHz, 50 V
C-Band under OQPSK
CGHV1F006S-AMP1
CGHV1F006S-AMP2
CGHV1F006S-AMP3
Each
Each
Each
Test board with GaN HEMT installed,
7.9 - 8.4 GHz, 28 V
X-Band SATCOM
Test board with GaN HEMT installed,
8.5 - 9.6 GHz, 28 V
X-Band RADAR
Test board with GaN HEMT installed,
4.9 - 5.9 GHz, 50 V
802.11
CGHV1F006S-AMP4
CGHV1F006S-TR
Each
Delivered in Tape and Reel
250 parts / reel
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
21
CGHV1F006S Rev 2.2
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate
and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,
representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average
values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different
applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts
for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical
implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
For more information, please contact:
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.cree.com/rf
Sarah Miller
Marketing
Cree, RF Components
1.919.407.5302
Ryan Baker
Marketing & Sales
Cree, RF Components
1.919.407.7816
Tom Dekker
Sales Director
Cree, RF Components
1.919.313.5639
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
Copyright © 2013 - 2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
www.cree.com/rf
22
CGHV1F006S Rev 2.2
相关型号：
©2020 ICPDF网 联系我们和版权申明