CGHV37400F_技术文档

CGHV37400F

400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems

Cree’s CGHV37400F is a gallium nitride (GaN) high electron mobility transistor (HEMT)

designed speciﬁcally with high efﬁciency, high gain and wide bandwidth capabilities,

which makes the CGHV37400F ideal for 3.5 - 3.7 GHz S-Band radar ampliﬁer applications.

The transistor is matched to 50-ohms on the input and 50-ohms on the output. The

CGHV35400 is based on Cree’s high power density 50 V, 0.4 µm GaN on silicon carbide

(SiC) foundry process. The transistor is supplied in a ceramic/metal ﬂange package, type

440217.

Typical Performance Over 3.5-3.7 GHz (T_C= 25˚C) of Demonstration Ampliﬁer

Parameter

3.5 GHz

3.6

3.7 GHz

Units

Output Power

555

560

555

W

Gain

11.4

55

11.5

55

11.4

55

dB

%

Drain Efﬁciency

Note:

Measured in the CGHV37400F-AMP application circuit, under 100 μs pulse width, 10% duty cycle, P_IN= 46 dBm.

Features

•

3.3 - 3.8 GHz Operation

550 W Typical Output Power

11.5 dB Power Gain

55% Typical Drain Efﬁciency

50 Ohm Internally Matched

<0.3 dB Pulsed Amplitude Droop

Subject to change without notice.

www.cree.com/rf

1

Absolute Maximum Ratings (not simultaneous)

Parameter

Symbol

PW

Rating

100

Units

µs

Conditions

Pulse Width

Duty Cycle

DC

10

%

Drain-Source Voltage

V_DSS

V_GS

125

Volts

˚C

25˚C

Gate-to-Source Voltage

Storage Temperature

-10, +2

-65, +150

225

T_STG

Operating Junction Temperature

Maximum Forward Gate Current

Maximum Drain Current¹

Soldering Temperature²

Screw Torque

T

˚C

J

I_GMAX

I_DMAX

T_S

80

mA

A

25˚C

24

245

˚C

40

in-oz

˚C/W

˚C

τ

Pulsed Thermal Resistance, Junction to Case

Case Operating Temperature

R_θJC

T_C

0.22

0.30

-40, +125

100 μsec, 10%, 85˚C , P_DISS= 418 W

500 μsec, 10%, 85˚C, P_DISS= 418 W

Notes:

¹Current limit for long term, reliable operation

²Refer to the Application Note on soldering at http://www.cree.com/rf/tools-and-support/document-library

Electrical Characteristics

Characteristics

Symbol

Min.

Typ.

Max.

Units

Conditions

DC Characteristics¹(T_C= 25˚C)

Gate Threshold Voltage

V_GS(th)

V_GS(Q)

I_DS

-3.8

–

-3.0

-2.7

75.5

–

-2.3

–

V_DC

A

V_DS= 10 V, I_D= 83.6 mA

V_DS= 50 V, I_D= 0.5 A

Gate Quiescent Voltage

Saturated Drain Current²

62.7

150

–

V_DS= 6.0 V, V_GS= 2.0 V

V_GS= -8 V, I_D= 83.6 mA

Drain-Source Breakdown Voltage

V_BR

–

V_DC

RF Characteristics³(T_C= 25˚C, F₀= 3.5 - 3.7 GHz unless otherwise noted)

Output Power at 3.5 GHz

Output Power at 3.6 GHz

Output Power at 3.7 GHz

Power Gain at 3.5 GHz

Power Gain at 3.6 GHz

Power Gain at 3.7 GHz

Drain Efﬁciency

P_OUT1

P_OUT2

P_OUT3

GP₁

–

555

560

555

11.4

11.5

11.4

55

–

W

V_DD= 50 V, I_DQ= 1000 mA, P_IN= 46 dBm

V_DD= 50 V, I_DQ= 1000 mA, P_IN= -10 dBm

V_DD= 50 V, I_DQ= 1000 mA, P_IN= 46 dBm

No damage at all phase angles, V_DD= 50 V, I_DQ= 1000 mA, P_IN= 46 dBm Pulsed

W

dB

%

GP₂

GP₃

DE

Small Signal Gain

S21

S11

S22

D

14

dB

Y

Input Return Loss

-9

Output Return Loss

Amplitude Droop

-6

-0.3

5:1

Output Stress Match

Notes:

VSWR

¹Measured on wafer prior to packaging.

²Scaled from PCM data.

³Measured in CGHV37400F-AMP. Pulse Width = 100 μS, Duty Cycle = 10%.

⁴The device is not recommended for 5:1 VSWR applications below 3.3 GHz.

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

2

CGHV37400F Rev 0.0

Electrostatic Discharge (ESD) Classiﬁcations

Parameter

Symbol

HBM

Class

Test Methodology

JEDEC JESD22 A114-D

JEDEC JESD22 C101-C

Human Body Model

Charge Device Model

1A (> 250 V)

II (200 < 500 V)

CDM

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

3

CGHV37400F Rev 0.0

Typical Performance

Figure 1. - Typical Small Signal Gain and Return Losses vs Frequency

V_DD= 50 V, I_DQ= 1.0 A

20

15

10

5

0

-5

S21

S11

S22

-10

-15

-20

-25

2.5

2.7

2.9

3.1

3.3

3.5

3.7

3.9

4.1

4.3

4.5

Frequency (GHz)

Figure 2. - CGHV37400F Output Power and Drain Efﬁciency vs Frequency

V_DD= 50 V, I_DQ= 1.0 A, P_IN= 46 dBm, Pulse Width = 100µs, Duty Cycle = 10 %, T_CASE= 25˚C

650

600

550

500

450

400

350

90

80

70

60

50

40

30

2.8

2.9

3.0

3.1

3.2

3.3

3.4

3.5

3.6

3.7

3.8

3.9

Frequency (GHz)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

4

CGHV37400F Rev 0.0

Typical Performance

Figure 3. - Typical Output Power vs Input Power of the CGHV37400F

V_DD= 50 V, I_DQ= 1.0 A, Pulse Width = 100µs, Duty Cycle = 10%, T_CASE= 25˚C

60

55

50

45

40

3.5 GHz

3.6 GHz

3.7 GHz

35

25

30

35

40

45

50

Input Power (dBm)

Figure 2. - CGHV37400F Drain Efﬁciency and Gain vs Input Power

V_DD= 50 V, I_DQ= 1.0 A, Pulse Width = 100µs, Duty Cycle = 10 %, T_CASE= 25˚C

60

50

40

30

20

10

16

14

12

10

8

Drain Efficiency - 3.5 GHz

Drain Efficiency - 3.6 GHz

Drain Efficiency - 3.7 GHz

Gain - 3.5 GHz

Gain - 3.6 GHz

Gain - 3.7 GHz

6

0

4

25

30

35

40

45

50

Input Power (dBm)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

5

CGHV37400F Rev 0.0

CGHV37400F-AMP Application Circuit Bill of Materials

Designator

Description

Qty

R1

R2

RES, 511, OHM, +/- 1%, 1/16W, 0603

RES, 5.1, OHM, +/- 1%, 1/16W, 0603

CAP, 6.8pF, +/-0.25%, 250V, 0603

CAP, 10.0pF, +/-1%, 250V, 0805

CAP, 10.0pF, +/-5%, 250V, 0603

CAP, 470pF, 5%, 100V, 0603, X

CAP, 33000 pF, 0805, 100V, X7R

CAP, 10uF 16V TANTALUM

1

3

1

2

1

2

1

C1

C2, C7, C8

C3

C4, C9

C5

C6

C10

C11

C12

J1,J2

J3

CAP, 1.0uF, 100V, 10%, X7R, 1210

CAP, 33uF, 20%, G CASE

CAP, 3300uF, +/-20%, 100V, ELECTROLYTIC

CONN, SMA, PANEL MOUNT JACK, FL

HEADER, RT>PLZ, 0.1CEN LK 9POS

CONNECTOR; SMB, Straight, JACK, SMD

CABLE, 18 AWG, 4.2

J4

W1

-

PCB, RO4350, 2.5 X 4.0 X 0.030

CGHV37400F

Q1

CGHV37400F Power Dissipation De-rating Curve

450

400

350

300

250

200

150

Note 1

100

100 us 10 %

500 us 10 %

50

0

25

50

75

100

125

150

175

200

225

250

Maximum Case Temperature (°C)

Note 1. Area exceeds Maximum Case Temperature (See Page 2).

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

6

CGHV37400F Rev 0.0

CGHV37400F-AMP Application Circuit Outline

CGHV37400F-AMP Application Circuit Schematic

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

7

CGHV37400F Rev 0.0

Product Dimensions CGHV37400F (Package Type — 440217)

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

8

CGHV37400F Rev 0.0

Part Number System

CGHV37400F

Package

Power Output (W)

Upper Frequency (GHz)

Cree GaN High Voltage

Parameter

Value

Units

Upper Frequency¹

Power Output

Package

3.7

400

GHz

W

-

Flange

Table 1.

Note¹: Alpha characters used in frequency code

indicate a value greater than 9.9 GHz. See Table

2 for value.

Character Code

Code Value

A

B

C

D

E

0

1

2

3

4

5

6

7

8

9

F

G

H

J

K

1A = 10.0 GHz

2H = 27.0 GHz

Examples:

Table 2.

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

9

CGHV37400F Rev 0.0

Product Ordering Information

Order Number

Description

Unit of Measure

Image

CGHV37400F

GaN HEMT

Each

CGHV37400F-TB

Test board without GaN HEMT

Each

CGHV37400F-AMP

Test board with GaN HEMT installed

Each

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

10

CGHV37400F Rev 0.0

Disclaimer

Speciﬁcations are subject to change without notice. Cree, Inc. believes the information contained within this data sheet to be accurate

and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights of third parties which may

result from its use. No license is granted by implication or otherwise under any patent or patent rights of Cree. Cree makes no warranty,

representation or guarantee regarding the suitability of its products for any particular purpose. “Typical” parameters are the average

values expected by Cree in large quantities and are provided for information purposes only. These values can and do vary in different

applications and actual performance can vary over time. All operating parameters should be validated by customer’s technical experts

for each application. Cree products are not designed, intended or authorized for use as components in applications intended for surgical

implant into the body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or

death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.

For more information, please contact:

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

www.cree.com/rf

Sarah Miller

Marketing

Cree, RF Components

1.919.407.5302

Ryan Baker

Marketing & Sales

Cree, RF Components

1.919.407.7816

Tom Dekker

Sales Director

Cree, RF Components

1.919.407.5639

Cree, Inc.

4600 Silicon Drive

Durham, North Carolina, USA 27703

USA Tel: +1.919.313.5300

Fax: +1.919.869.2733

registered trademarks of Cree, Inc.

www.cree.com/rf

11

CGHV37400F Rev 0.0


型号：	CGHV37400F
厂家：	CREE, INC
描述：	400 W, 3500 - 3700 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
文件：	总11页 (文件大小：815K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CGHV37400F [CREE]

相关型号：

CGHV40030

CGHV40030-TB

CGHV40030F

CGHV40030F-AMP

CGHV40030P

CGHV40050

CGHV40050-AMP

CGHV40050-TB

CGHV40050F

CGHV40050P

CGHV40100

CGHV40100-TB