CXXXTR5050-SXX000 [CREE]

Adhesive Die Attach Low Forward Voltage 3.3 V Typical at 120 mA; 粘接芯片粘接低正向电压3.3 V时典型120毫安
CXXXTR5050-SXX000
型号: CXXXTR5050-SXX000
厂家: CREE, INC    CREE, INC
描述:

Adhesive Die Attach Low Forward Voltage 3.3 V Typical at 120 mA
粘接芯片粘接低正向电压3.3 V时典型120毫安

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中文:  中文翻译
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TR5050™ LEDs  
CxxxTR5050-Sxx000  
Data Sheet  
Cree’sꢀTR5050ꢀLEDsꢀareꢀtheꢀnextꢀgenerationꢀofꢀsolid-stateꢀLEDꢀemittersꢀthatꢀcombineꢀhighlyꢀefficientꢀInGaNꢀmaterialsꢀ  
withCree’sproprietarydevicetechnologyandsilicon-carbidesubstratestodeliversuperiorvalueꢀforꢀtheꢀTV-backlightingꢀ  
andꢀgeneral-illuminationꢀmarkets.ꢀTheꢀTR5050ꢀLEDsꢀareꢀamongꢀtheꢀbrightestꢀinꢀtheꢀtop-viewꢀmarketꢀwhileꢀdeliveringꢀaꢀ  
lowꢀforwardꢀvoltage,ꢀresultingꢀinꢀaꢀveryꢀbrightꢀandꢀhighlyꢀefficientꢀsolution.ꢀTheꢀdesignꢀisꢀoptimallyꢀsuitedꢀforꢀindustry-  
standardꢀtop-viewꢀpackages.  
FEATURES  
APPLICATIONS  
•ꢀ RectangularꢀLEDꢀRFꢀPerformance  
–ꢀ 450ꢀ&ꢀ460ꢀnmꢀ–ꢀ180ꢀmWꢀmin  
•ꢀ AdhesiveꢀDieꢀAttach  
•ꢀ LargeꢀLCDꢀBacklightingꢀ  
–ꢀ Television  
•ꢀ GeneralꢀIllumination  
•ꢀ MediumꢀLCDꢀBacklightingꢀ  
–ꢀ PortableꢀPCs  
•ꢀ LowꢀForwardꢀVoltageꢀ–ꢀ3.3ꢀVꢀTypicalꢀatꢀ120ꢀmA  
•ꢀ MaximumꢀDCꢀForwardꢀCurrentꢀ-ꢀ180ꢀmA  
•ꢀ Classꢀ2ꢀESDꢀRating  
–ꢀ Monitors  
•ꢀ InGaNꢀJunctionꢀonꢀThermallyꢀConductiveꢀSiCꢀ  
Substrate  
•ꢀ LEDꢀVideoꢀDisplays  
•ꢀ WhiteꢀLEDs  
CxxxTR5050-Sxx000 Chip Diagram  
Die Cross Section  
Bottom View  
Top View  
TR5050ꢀLED  
500ꢀxꢀ500ꢀμm  
Cathodeꢀ(-)  
98-μmꢀdiameter  
BottomꢀSurface  
327ꢀxꢀ327ꢀμm  
Anodeꢀ(+)  
90-μmꢀdiameter  
tꢀ=ꢀ175ꢀμm  
Subject to change without notice.  
www.cree.com  
1
Maximum Ratings at TA = 25°CNotes 1&3  
DCꢀForwardꢀCurrentꢀNoteꢀ4  
CxxxTR5050-Sxx000  
180ꢀmA  
PeakꢀForwardꢀCurrentꢀ(1/10ꢀdutyꢀcycleꢀ@ꢀ1ꢀkHz)  
LEDꢀJunctionꢀTemperature  
230ꢀmA  
150°C  
ReverseꢀVoltage  
5ꢀV  
OperatingꢀTemperatureꢀRange  
-40°Cꢀtoꢀ+100°C  
-40°Cꢀtoꢀ+100°C  
1000ꢀV  
StorageꢀTemperatureꢀRange  
ElectrostaticꢀDischargeꢀThresholdꢀ(HBM)ꢀNoteꢀ2  
ElectrostaticꢀDischargeꢀClassificationꢀ(MIL-STD-883E)ꢀNoteꢀ2  
Classꢀ2  
Note 3  
Typical Electrical/Optical Characteristics at TA = 25°C, If = 120 mA  
Reverse Current  
[I(Vr=5V), μA]  
Full Width Half Max  
Part Number  
Forward Voltage (Vf, V)  
(λD, nm)  
Min.  
Typ.  
3.3  
Max.  
Max.  
Typ.  
20  
C450TR5050-Sxx000  
C460TR5050-Sxx000  
2.7  
2.7  
3.5  
3.5  
2
2
3.3  
21  
Mechanical Specifications  
Description  
CxxxTR5050-Sxx000  
Dimension  
Tolerance  
±35  
P-NꢀJunctionꢀAreaꢀ(μm)  
ChipꢀAreaꢀ(μm)  
426ꢀxꢀ443  
500ꢀxꢀ500  
175  
±35  
ChipꢀThicknessꢀ(μm)  
±15  
AuꢀBondꢀPadꢀDiameterꢀAnodeꢀ(μm)  
AuꢀBondꢀPadꢀThicknessesꢀ(μm)  
AuꢀBondꢀPadꢀDiamaterꢀCathodeꢀ(μm)  
BottomꢀAreaꢀꢀ(μm)  
90  
±10  
1.0  
±0.5  
±10  
98  
327ꢀxꢀ327  
±35  
Notes:  
1.ꢀ Maximumꢀratingsꢀareꢀpackage-dependent.ꢀTheꢀaboveꢀratingsꢀwereꢀdeterminedꢀusingꢀlampsꢀinꢀchip-on-MCPCBꢀ(metalꢀcoreꢀPCB)ꢀ  
packagesꢀforꢀcharacterization.ꢀRatingsꢀforꢀotherꢀpackagesꢀmayꢀdiffer.ꢀJunctionꢀtemperatureꢀshouldꢀbeꢀcharacterizedꢀinꢀaꢀspecificꢀ  
packageꢀtoꢀdetermineꢀlimitations.ꢀAssemblyꢀprocessingꢀtemperatureꢀmustꢀnotꢀexceedꢀ325°Cꢀ(<ꢀ5ꢀseconds).  
2.ꢀ Productꢀresistanceꢀtoꢀelectrostaticꢀdischargeꢀ(ESD)ꢀaccordingꢀtoꢀtheꢀHBMꢀisꢀmeasuredꢀbyꢀsimulatingꢀESDꢀusingꢀaꢀrapidꢀavalancheꢀ  
energyꢀtestꢀ(RAET).ꢀTheꢀRAETꢀproceduresꢀareꢀdesignedꢀtoꢀapproximateꢀtheꢀmaximumꢀESDꢀratingsꢀshown.  
3.ꢀ Allꢀproductsꢀconformꢀtoꢀtheꢀlistedꢀminimumꢀandꢀmaximumꢀspecificationsꢀforꢀelectricalꢀandꢀopticalꢀcharacteristicsꢀwhenꢀassembledꢀ  
andꢀoperatedꢀatꢀ120ꢀmAꢀwithinꢀtheꢀmaximumꢀratingsꢀshownꢀabove.ꢀEfficiencyꢀdecreasesꢀatꢀhigherꢀcurrents.ꢀTypicalꢀvaluesꢀgivenꢀ  
arewithintherangeofaveragevaluesexpectedbymanufacturerinlargequantitiesandareprovidedforinformationonly.Allꢀ  
measurementsꢀwereꢀmadeꢀusingꢀlampsꢀinꢀT-1ꢀ3/4ꢀpackagesꢀ(withꢀHysolꢀOS4000ꢀepoxyꢀencapsulantꢀandꢀclearꢀepoxyꢀdieꢀattach).ꢀ  
OpticalꢀcharacteristicsꢀmeasuredꢀinꢀanꢀintegratingꢀsphereꢀusingꢀIlluminanceꢀE.  
4.ꢀ TheꢀmaximumꢀforwardꢀcurrentꢀisꢀdeterminedꢀbyꢀtheꢀthermalꢀresistanceꢀbetweenꢀtheꢀLEDꢀjunctionꢀandꢀambient.ꢀItꢀisꢀcrucialꢀforꢀ  
theꢀend-productꢀtoꢀbeꢀdesignedꢀinꢀaꢀmannerꢀthatꢀminimizesꢀtheꢀthermalꢀresistanceꢀfromꢀtheꢀLEDꢀjunctionꢀtoꢀambientꢀinꢀorderꢀtoꢀ  
optimizeꢀproductꢀperformance.  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR5050ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀꢀ  
Durham,ꢀNCꢀ27703  
USAꢀTel:ꢀ+1.919.313.5300  
www.cree.com  
2
CPR3ER Rev. -  
Standard Bins for CxxxTR5050-Sxx000  
LEDꢀchipsꢀareꢀsortedꢀtoꢀtheꢀradiant fluxꢀandꢀdominant wavelengthꢀbinsꢀshown.ꢀAꢀsortedꢀdieꢀsheetꢀcontainsꢀdieꢀfromꢀ  
onlyꢀoneꢀbin.ꢀSortedꢀdieꢀkitꢀ(CxxxTR5050-Sxxxx)ꢀordersꢀmayꢀbeꢀfilledꢀwithꢀanyꢀorꢀallꢀbinsꢀ(CxxxTR5050-xxxx)ꢀcontainedꢀ  
inꢀtheꢀkit.ꢀAllꢀradiantꢀfluxꢀandꢀdominantꢀwavelengthꢀvaluesꢀshownꢀandꢀspecifiedꢀareꢀatꢀIfꢀ=ꢀ120ꢀmA.  
C450TR5050-S18000  
C450TR5050-0209  
C450TR5050-0205  
C450TR5050-0201  
C450TR5050-0210  
C450TR5050-0206  
C450TR5050-0202  
C450TR5050-0211  
C450TR5050-0207  
C450TR5050-0203  
C450TR5050-0212  
C450TR5050-0208  
C450TR5050-0204  
220.0  
200.0  
180.0  
455  
445  
447.5  
450  
Dominant Wavelength (nm)  
452.5  
Note:ꢀTheꢀradiant-fluxꢀvaluesꢀaboveꢀareꢀrepresentativeꢀofꢀtheꢀdieꢀinꢀaꢀCreeꢀ5-mmꢀlamp.  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Durham,ꢀNCꢀ27703  
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR5050ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀꢀ  
USAꢀTel:ꢀ+1.919.313.5300  
www.cree.com  
3
CPR3ER Rev. -  
Characteristic Curves  
ThesearerepresentativemeasurementsfortheTR5050LEDproduct.Actualcurveswillvaryslightlyforthevariousꢀ  
radiantꢀfluxꢀandꢀdominantꢀwavelengthꢀbins.ꢀ  
Forward Current vs. Forward Voltage  
Wavelength Shift vs. Forward Current  
180  
160  
140  
120  
100  
80  
3
2
1
0
60  
-1  
-2  
-3  
40  
20  
0
0
0.5  
1
1.5  
2
2.5  
3
3.5  
4
0
50  
100  
150  
200  
Vf (V)  
If (mA)  
Voltage Shift Vs Junction Temperature  
Relative Intensity vs. Forward Current  
0.000  
-0.050  
-0.100  
-0.150  
-0.200  
-0.250  
-0.300  
-0.350  
-0.400  
175%  
150%  
125%  
100%  
75%  
50%  
25%  
0%  
25  
50  
75  
100  
125  
150  
0
20  
40  
60  
80  
100  
120  
140  
160  
180  
Junction Temperature (°C)  
If (mA)  
Relative Light Intensity Vs Junction Temperature  
100%  
95%  
90%  
85%  
80%  
75%  
70%  
25  
50  
75  
100  
125  
150  
Junction Temperature (°C)  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Durham,ꢀNCꢀ27703  
USAꢀTel:ꢀ+1.919.313.5300  
www.cree.com  
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR5050ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀꢀ  
4
CPR3ER Rev. -  
Radiation Pattern  
ThisꢀisꢀaꢀrepresentativeꢀradiationꢀpatternꢀforꢀtheꢀTR5050ꢀLEDꢀproduct.ꢀActualꢀpatternsꢀwillꢀvaryꢀslightlyꢀforꢀeachꢀchip.  
Cree,ꢀInc.  
4600ꢀSiliconꢀDrive  
Durham,ꢀNCꢀ27703  
USAꢀTel:ꢀ+1.919.313.5300  
www.cree.com  
Copyrightꢀ©ꢀ2011ꢀCree,ꢀInc.ꢀAllꢀrightsꢀreserved.ꢀTheꢀinformationꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀchangeꢀwithoutꢀnotice.ꢀCreeꢀandꢀtheꢀ  
Creeꢀlogoꢀareꢀregisteredꢀtrademarks,ꢀandꢀTRꢀandꢀTR5050ꢀareꢀtrademarksꢀofꢀCree,ꢀInc.ꢀꢀ  
5
CPR3ER Rev. -  

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