GTVA104001FA [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, 960 â 1215 MHz;
| 型号： | GTVA104001FA |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 400 W, 50 V, 960 â 1215 MHz |
| 文件： | 总4页 (文件大小：314K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Advance GTVA104001FA
Thermally-Enhanced High Power RF GaN on SiC HEMT
400 W, 50 V, 960 – 1215 MHz
Description
Advance Specification Data
Sheets describe products that are
being considered by Wolfspeed
for development and market intro-
duction. The target performance
shown in Advance Specifications
is not final and should not be used
for any design activity. Please
contact Wolfspeed about the fu-
ture availability of these products.
The GTVA104001FA is a 400-watt GaN on SiC high electron mobility
transistor (HEMT) for use in the 960 to 1215 MHz frequecy band. It
features input matching, high efficiency, and a thermally-enhanced
surface-mount package with earless flange.
Features
•ꢀ GaN on SiC HEMT technology
•ꢀ Broadband internal input matching
•ꢀ Typical Pulsed CW performance, 960 - 1215 MHz, 50V,
- Output power = 410 W
- Drain Efficiency = 70 %
- Gain = 19 dB
- Pulse width = 128 µs
- Duty cycle = 10 %
•ꢀ Pb-free and RoHS compliant
GTVA104001FA
Package H-37265J-2
Target RF Characteristics
Typical RF Performance (tested in Wolfspeed test fixture)
V
= 50 V, I
= 50 mA, P
= 400 W, ƒ = 960 – 1215 MHz, Pulse Width = 128 µs, 10% duty cycle
DD
DQ
OUT
Characteristic
Linear Gain
Symbol
Min
—
Typ
19
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
—
70
—
%
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 02, 2018-05-08
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
Advance GTVA104001FA
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
–6
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Gate Threshold Voltage
V
GS
= –8 V, I = 10 mA
V
(BR)DSS
D
V
= 10 V, I = 42 mA
V
GS(th)
–3
–2.2
V
DS
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
50
Unit
V
Drain Operating Voltage
Gate Quiescent Voltage
V
DD
V
= 50 V, I = 100 mA
V
GS(Q)
—
–3.2
—
V
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current
V
DSS
V
GS
–10 to +2
38
V
I
mA
A
G
Drain Current
I
5
D
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V ) specified above.
DD
Thermal Chracteristics
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction to Case (ƒ =1030 MHz, V = 50 V,
R
qJC
0.13
°C/W
DD
I
= 100 mA, T = 70 °C, P
= 400 W, Pulse Width = 128 µs,
GS
F
OUT
10% duty cycle)
Ordering Information
Type and Version
GTVA104001FA V1 R0
GTVA104001FA V1 R2
Order Code
TBD
Package
Shipping
H-37265J-2, earless flange
H-37265J-2, earless flange
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
TBD
Rev. 02, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
Advance GTVA104001FA
3
Pinout Diagram (top view)
D
S
Pin
D
G
Description
Drain Device
Gate Device
Source (flange)
S
G
H-37265J-2_03_pd_20 16-12-01-bn
Lead connections for GTVA104001FA
Package Outline Specifications
Package H-37265J-2
2X 6.35
[.250]
45° X .64
[.025]
2X 2.59±.51
D
G
[.102±.020]
LID
10.16±.25
[.400±.010]
FLANGE
10.16
[.400]
(15.34
[.604])
C
L
FLANGE
4X R0.63
[R.025] MAX
C
L
10.16±.25
[.400±.010]
SPH 1.57
[.062]
3.61±.38
[.142±.015]
H-37265J-2_02_po_05-29-2015
1.02
[.040]
10.16
[.400]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ꢀ.12ꢁ ꢂ.ꢀꢀ5ꢃ unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: ꢀ.1ꢀ + ꢀ.ꢀ51/-ꢀ.ꢀ25 mm ꢂ.ꢀꢀ4 +ꢀ.ꢀꢀ2/-ꢀ.ꢀꢀ1 inchꢃ.
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ.
Rev. 02, 2018-05-08
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
Advance GTVA104001FA
4
Revision History
Revision
Date
Data Sheet Type
Advance
Page
All
Subjects (major changes since last revision)
01
02
2016-05-03
2016-05-08
Data Sheet reflects advance specification for product development
Converted to Wolfspeed Data Sheet, updated DC and thermal characteristics
Advance
All
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © ꢀꢁꢂ8 Cree, Inc. All rights reserved. The informꢃtion in this document is subject to chꢃnge without notice. Wolfspeed™ ꢃnd the Wolfspeed logo ꢃre trꢃdemꢃrks of Cree, Inc.
www.wolfspeed.com
Rev. 02, 2018-05-08
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