GTVA107001EC-V1-R2 [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 â 1215 MHz;
| 型号： | GTVA107001EC-V1-R2 |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 700 W, 50 V, 960 â 1215 MHz |
| 文件： | 总8页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTVA107001EC/FC
Thermally-Enhanced High Power RF GaN on SiC HEMT
700 W, 50 V, 960 – 1215 MHz
Description
The GTVA107001EC and GTVA107001FC are 700-watt GaN on SiC
high electron mobility transistors (HEMT) for use in the 960 to 1215
MHz frequecy band.They feature input matching, high efficiency, and
thermally-enhanced packages.
GTVA107001EC
Package H-36248-2
GTVA107001FC
Package H-37248-2
Power Sweep, Pulsed CW
VDS = 50 V, IDQ = 100 mA, 128 μs pulse width,
10% duty cycle, power optimized
Features
80
•
•
•
GaN on SiC HEMT technology
Input matched
ergoqhgorgn'
qpjgfq4po5g
70
60
50
40
30
20
10
Typical pulsed CW performance (class AB), 1030
MHz, 50 V, 128 µs pulse width, 10% duty cycle
Gain: 960 MHz
Gain: 1030 MHz
Gain: 1090 MHz
Gain: 1150 MHz
Gain: 1215 MHz
Eff: 960 MHz
Eff: 1030 MHz
Eff: 1090 MHz
Eff: 1150 MHz
Eff: 1215 MHz
- Output power P
= 890 W
3dB
- Drain efficiency = 75%
- Gain = 18 dB
•
Capable of withstanding a 10:1 load mismatch (all
phase angles at 700 W peak power under pulse
conditions: 50 V, 100 mA I ,128 µs pulse width,
DQ
10% duty cycle
g107001efc-gr3
•
•
Human Body Model Class IC (per ANSI/ESDA/
JEDEC JS-001)
0
200
400
600
800
1000
Pout (W)
Pb-free and RoHS-compliant
RF Characteristics
Pulsed RF Performance (tested in Wolfspeed production test fixture)
GTVA107001EC: V = 50 V, I = 100 mA, P
= 700 W, ƒ = 1030 MHz, 128 μs pulse width, 10% duty cycle
DD
DQ
OUT
Characteristic
Symbol
Min
17.5
67
Typ
20
Max
22
Unit
dB
Gain
G
ps
Drain Efficiency
D
70
—
%
GTVA107001FC: V = 50 V, I = 100 mA, P
= 700 W, ƒ = 1030 MHz, 128 μs pulse width, 10% duty cycle
DD
DQ
OUT
Characteristic
Symbol
Min
17.5
65
Typ
20
Max
22
Unit
dB
Gain
G
ps
Drain Efficiency
All published data at T
D
70
—
%
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 03, 2019-02-15
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
2
GTVA107001EC/FC
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
V
GS
V
GS
V
DS
= –8 V, I = 10 mA
V
(BR)DSS
D
= –8 V, V = 10 V
I
—
12
mA
V
DS
DSS
= 10 V, I = 84 mA
V
GS(th)
–6.2
–3.0
–2.2
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
50
Unit
V
Drain Operating Voltage
Gate Quiescent Voltage
V
DD
V
DS
= 50 V, I = 0.10 A
V
—
–3.2
—
V
D
GS(Q)
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current
V
DSS
V
GS
–10 to +2
100
V
I
mA
A
G
D
Drain Current
I
10
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V ) specified above.
DD
Thermal Chracteristics
1
2
T
CASE
T
CASE
= 85 °C, P
= 85 °C, P
= 334 W, 50 V, I = 100 mA, 128 μs pulse width, 10% duty cycle
DQ
diss
diss
= 254 W, 50 V, I = 100 mA, Mode-S signal
DQ
Parameter
Symbol
Value
0.21
Unit
°C/W
°C/W
1
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
R
JC
JC
2
R
0.25
Ordering Information
Type and Version
Order Code
Package and Description
H-36248-2, bolt-down flange
H-36248-2, bolt-down flange
H-37248-2, earless flange
H-37248-2, earless flange
Shipping
GTVA107001EC V1 R0
GTVA107001EC V1 R2
GTVA107001FC V1 R0
GTVA107001FC V1 R2
GTVA107001EC-V1-R0
GTVA107001EC-V1-R2
GTVA107001FC-V1-R0
GTVA107001FC-V1-R0
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA107001EC/FC
3
Typical Performance (data taken in Wolfspeed production test fixture)
Power Sweep: Gain v. Output Power
(series show gain at various duty cycles)
VDS = 50 V, IDQ = 100 mA, ƒ = 1030 MHz
Power Sweep: Gain v. Output Power
(series show gain at frequency)
V
DS = 50 V, IDQ = 100 mA, 128 μs pulse width,
10% duty cycle, power optimized
25
23
21
19
17
15
25
23
21
19
17
15
Gain, 128 μs-10%
Gain, 128 μs-1%
Gain, Mode-S
Gain, 1030 MHz
Gain, 1090 MHz
Gain, 1150 MHz
g107001efc-gr1
g107001efc-gr2
0
200
400
600
800
1000
0
200
400
600
800
1000
Output Power (W)
Output Power (W)
CW Performance Small Signal
MODE-S:(32μs-ON/18-μs-OFF)x48,
Gain & Input Return Loss
LTDF-6.4%
VDS = 50 V, IDQ = 100 mA, measured on 24th
pulse
V
DD = 50 V, IDQ(MAIN) = 1000 mA
23
0
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
Gain: 1030MHz
Pout: 1030MHz
Eff: 1030MHz
Gain
22
21
20
19
18
-5
-10
-15
-20
-25
IRL
g107001efc_gr 8
26 28 30 32 34 36 38 40 42
PIN (dBm)
g107001efc-gr7
800
900
1000
1100
1200
1300
Frequency (MHz)
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
4
GTVA107001EC/FC
Load Pull Performance
Each Side Load Pull Performance –16 μs pulse width, 10% duty cycle, class AB, V = 50 V, 60 mA
DD
Max Output Power
Max Efficiency
Z Optimum
Freq
[MHz] [dBm]
P
P
[W]
Eff
[%]
Gain
[dB]
Z
[]
P
P
Eff
[%]
Gain
[dB]
Z
[]
P
P
[W]
Eff
[%]
Gain
[dB]
Z
[]
Z
Source
[]
OUT
OUT
Load
OUT
OUT
Load
OUT
OUT
Load
[dBm] [W]
[dBm]
960
60.37 1088.93 75.03 19.66
1.28+j0.10
1.28+j0.19
1.32+j0.28
1.51+j0.13
1.54+j0.11
1.59+j0.01
59.43 877.00 83.15 20.84
58.68 737.90 83.12 20.88
58.73 746.45 80.44 19.94
58.30 676.08 77.38 20.91
58.12 648.63 75.83 20.09
57.74 594.29 73.93 20.63
1.37+j0.85
1.61+j1.01
1.83+j0.97
1.72+j1.07
2.19+j0.97
2.02+j1.07
60.02 1004.62 79.99 20.45
60.01 1002.31 78.22 20.00
59.70 933.25 77.40 19.53
59.21 833.68 72.17 20.07
59.09 810.96 70.51 19.79
58.94 783.43 70.07 19.97
1.28+j0.52
1.39+j0.43
1.48+j0.52
1.59+j0.46
1.68+j0.33
1.70+j0.33
0.38-j1.05
0.43-j1.15
0.66-j1.27
0.81-j1.44
1.00-j1.73
1.55-j1.60
1030 60.14 1032.76 74.45 19.58
1090 59.88 972.75 73.06 19.08
1150 59.34 859.01 67.27 19.46
1200 59.20 831.76 66.29 19.34
1215 59.02 797.99 65.34 19.44
Reference Circuit tuned for 0.960 to 1.215 GHz
DUT
GTVA107001EC V1 or GTVA107001FC V1
Reference Circuit Part No.
PCB
LTN/GTVA107001FC V1 or LTN/GTVA107001FC V1
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, r = 3.66
C215
VDD
RO4350, 20 MIL (105)
RO4350, 20 MIL (193)
VGG
C114
C213
C214
C115
R103
R104
R102
C111
C212
C209
C210
C205
C211
C207
C201
C110
C109
C203
C105
C103
C107
C101
C102
RF_IN
RF_OUT
C208
C104 C106
C108
R101
C206
C204
C202
C112 C113
0.96 – 1.215 GHZ, E04
0.96 – 1.215 GHZ, E04
GTVA107001FC_IN_02A
GTVA107001FC_OUT_02A
g tva 1 07 00 1e fc_ C D_ 2 01 8- 0 7- 2 4
Reference circuit assembly diagram (not to scale)
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA107001EC/FC
5
Reference Circuit (cont.)
Components Information
Component
Input
Description
Manufacturer
P/N
C101, C109, C115
C102
Capacitor, 56 pF
Capacitor, 0.4 pF
Capacitor, 1 pF
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC
ATC800A560JT250XT
ATC600F0R4AT250XT
ATC600F1R0BT250XT
ATC600F3R6BT250XT
ATC600F3R3BT250XT
ATC600F0R2AT250XT
ATC600F5R6BT250XT
ATC600F6R8BT250XT
C103, C104
C105
Capacitor, 3.6 pF
Capacitor, 3.3 pF
Capacitor, 0.2 pF
Capacitor, 5.6 pF
Capacitor, 6.8 pF
C106
C107, C108
C110, C112, C113
C111
C114
Capacitor, 1 μF
Resistor, 10 W
Resistor, 5.6 W
Resistor, 100 W
TDK Corporation
Panasonic – ECG
Panasonic – ECG
Panasonic – ECG
C4532X7R2A105M230KA
ERJ-3GEYJ100V
R101, R102
R103
ERJ-8RQJ5R6V
R104
ERJ-3GEYJ101V
Output
C201
Capacitor, 7.5 pF
Capacitor, 6.8 pF
Capacitor, 2.4 pF
Capacitor, 1.5 pF
ATC
ATC
ATC
ATC
ATC600F7R5BT250XT
ATC600F6R8BT250XT
ATC600F2R4BT250XT
ATC600F1R5BT250XT
C202
C203, C204
C205, C206, C207
C208
C209
C210
C211
C212
C213
C214
C215
Capacitor, 39 pF
Capacitor, 56 pF
Capacitor, 10 μF
Capacitor, 22 μF
Capacitor, 100 μF
Capacitor, 220 μF
Capacitor, 1 μF
ATC
ATC600F390JT250XT
ATC800A560JT250XT
C5750X5R1H106K230KA
SEK220M100ST
ATC
TDK Corporation
Cornell Dubilier Electronics (CDE)
Cornell Dubilier Electronics (CDE)
Panasonic – ECG
TDK Corporation
Panasonic – ECG
SK101M100ST
ECA-2AHG221
C4532X7R2A105M230KA
ECO-S2AP682EA
Capacitor, 100 V, 6800 μF
Pinout Diagrams (top view)
D
D
Source
(flange)
Source
(flange)
S
h-36248-2_2016-09-26
h-37248-2_2016-09-23
G
G
Pin
Description
Drain
Gate
D
G
S
GTVA107001EC
Package H-36248-2
GTVA107001FC
Package H-37248-2
Source (flange)
Rev. 03, 2019-02-15
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
6
GTVA107001EC/FC
Package Outline Specifications
Package H-36248-2
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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 ꢀ.005ꢁ unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm ꢀ.004 +0.002/-0.001 inchꢁ.
6. Gold plating thickness: 1.14 0.38 micron ꢀ45 15 microinchꢁ.
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA107001EC/FC
7
Package Outline Specifications
Package H-37248-2
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Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances 0.127 ꢀ.005ꢁ unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm ꢀ.004 +0.002/-0.001 inchꢁ.
6. Gold plating thickness: 1.14 0.38 micron ꢀ45 15 microinchꢁ.
Rev. 03, 2019-02-15
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA107001EC/FC
Revision History
Revision Date
8
Data Sheet
Type
Page
Subjects (major changes at each revision)
01
02
2016-09-27
2018-05-21
Advance
All
All
Data Sheet reflects advance specification for product development
Data Sheet shows typical performance information and reference circuit
Preliminary
All
1, 3
4
Data Sheet reflects released product specification
Updated Typ pulsed CW performance, added Mode S graph
Added loadpull information, added C215 to reference circuit and component list
02.1
2018-07-19
Production
02.2
03
2018-10-02
2019-02-15
Production
Production
2
Updated thermal characteristics
Add product GTVA107001FC V1
All
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2016 – 2019 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
www.wolfspeed.com
Rev. 03, 2019-02-15
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