GTVA220701FA [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 â 2170 MHz;
| 型号： | GTVA220701FA |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 70 W, 50 V, 1805 â 2170 MHz |
| 文件： | 总10页 (文件大小：581K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTVA220701FA
Thermally-Enhanced High Power RF GaN on SiC HEMT
70 W, 50 V, 1805 – 2170 MHz
Description
The GTVA220701FA is a 70-watt (P ) GaN on SiC high electron
3dB
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and
a thermally-enhanced package with earless flange.
GTVA220701FA
Package H-37265J-2
Features
Single-carrier WCDMA Drive-up
•ꢀ GaN on SiC HEMT technology
•ꢀ Input matched
VDD = 48 V, IDQ = 200 mA, ƒ = 1805 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
•ꢀ Typical CW performance, 1880 MHz, 48 V
32
28
24
20
16
12
8
80
60
40
20
0
- Output power at P
- Efficiency = 60.7%
- Gain = 21.6 dB
= 45 W
3dB
Efficiency
Gain
•ꢀ Human Body Model, Class 1A (per ANSI/ESDA/
JEDEC JS-001)
•ꢀ Capable of handling 10:1 VSWR @48 V, 40 W (CW)
output power
-20
-40
-60
-80
•ꢀ RoHS-compliant
PAR @ 0.01% CCDF
4
g220701fa-gr1a
0
27
31
35
39
43
47
Average Output Power (dBm)
RF Characteristics
Single-carrier LTE Specifications (tested in Wolfspeed test fixture)
= 48 V, I = 200 mA, P = 6.3 W avg, ƒ = 2170 MHz, 3GPP signal, 3.84 channel bandwidth,
V
DD
DQ
OUT
peak/average = 10.6 dB @ 0.01% CCDF
Characteristic
Symbol
Min
20.75
24.5
—
Typ
22
Max
—
Unit
dB
Linear Gain
G
ps
Drain Efficiency
hD
27
—
%
Adjacent Channel Power Ratio
ACPR
–36.5
–33
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 04, 2018-05-17
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTVA220701FA
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
V
GS
= –8 V, I = 7.2 mA
V
(BR)DSS
D
V
GS
= 8 V, V = 10 V
I
DSS
—
5
mA
V
DS
V
= 10 V, I = 7.2 mA
V
GS(th)
–3.8
–3.0
–2.3
DS
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
50
Unit
V
Drain Operating Voltage
Gate Quiescent Voltage
V
DD
V
= 48 V, I = 0.2 A
V
GS(Q)
—
–2.8
—
V
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current
V
DSS
V
GS
–10 to +2
20
V
I
mA
A
G
Drain Current
I
13.5
D
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V ) specified above.
DD
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance
R
2.36
°C/W
JC
q
(T
CASE
= 70 °C, 55 W (CW), V
= 48 V, 2170 MHz)
DD
Ordering Information
Type and Version
GTVA220701FA V1 R0
GTVA220701FA V1 R2
Order Code
Package
Shipping
GTVA220701FA-V1-R0
GTVA220701FA-V1-R2
H-37265J-2, earless flange
H-37265J-2, earless flange
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 04, 2018-05-17
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
3
Typical Performance (data taken in an Wolfspeed production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 200 mA, ƒ = 1880 MHz
3GPP WCDMA signal,
VDD = 48 V, IDQ = 200 mA, ƒ = 2170 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
10 dB PAR, 3.84 MHz bandwidth
32
28
24
20
16
12
8
80
60
40
20
0
32
28
24
20
16
12
8
80
60
40
20
0
Efficiency
Efficiency
Gain
Gain
-20
-40
-60
-80
-20
-40
-60
-80
PAR @ 0.01% CCDF
PAR @ 0.01% CCDF
4
4
g220701fa-gr1c
0
g220701fa-gr1b
0
27
31
35
39
43
47
27
31
35
39
43
47
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 200 mA, ƒ = 1805 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
VDD = 48 V, IDQ = 200 mA, ƒ = 1880 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
Efficiency
ACP Up
ACP Low
ACP Up
ACP Low
Efficiency
g220701fa-gr2b
g220701fa-gr2a
27
31
35
39
43
47
27
31
35
39
43
47
Average Output Power (dBm)
Average Output Power (dBm)
Rev. 04, 2018-05-17
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
4
Typical Performance (cont.)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ = 200 mA, POUT = 38.0 dBm,
3GPP WCDMA signal, 10 dB PAR
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 200 mA, ƒ = 2170 MHz,
3GPP WCDMA signal, 10 dB PAR,
3.84 MHz bandwidth
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
28
28
26
24
22
20
18
Efficiency
Efficiency
26
24
22
20
18
ACP Up
Gain
ACP Low
g220701fa-gr3
g220701fa-gr2c
1700 1800 1900 2000 2100 2200 2300
27
31
35
39
43
47
Average Output Power (dBm)
Frequency (MHz)
Single-carrier WCDMA Broadband
Performance
VDD = 48 V, IDQ = 200 mA, POUT = 38.0 dBm,
3GPP WCDMA signal, 10 dB PAR
CW Performance
(series show frequency)
VDD = 48 V, IDQ = 200 mA
25
70
-15
0
24
23
22
21
20
19
18
60
50
40
30
20
10
0
Return Loss
-20
-25
-30
-35
-40
-45
-5
Gain
1805 MHz
-10
-15
-20
-25
-30
1880 MHz
2170 MHz
ACP Up
Efficiency
g220701fa-gr5
g220701fa-gr4
27
31
35
39
43
47
51
1700 1800 1900 2000 2100 2200 2300
Output Power (dBm)
Frequency (MHz)
Rev. 04, 2018-05-17
4600 Silicon Drive
|
Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
5
Typical Performance (cont.)
CW Performance
at selected supply voltage
IDQ = 200 mA, ƒ = 1880 MHz
CW Performance
at selected supply voltage
IDQ = 200 mA, ƒ = 1805 MHz
25
70
60
50
40
30
20
10
0
25
24
23
22
21
20
19
18
70
60
50
40
30
20
10
0
Efficiency
Gain
24
23
22
21
20
19
18
44 V
48 V
52 V
44 V
48 V
52 V
Gain
Efficiency
35 39
g220701fa-gr6a
g220701fa-gr6b
27
31
35
39
43
47
51
27
31
43
47
51
Output Power (dBm)
Output Power (dBm)
CW Performance
Small Signal CW
Gain & Input Return Loss
VDD = 48 V, IDQ = 200 mA
at selected supply voltage
IDQ = 200 mA, ƒ = 2170 MHz
25
24
23
22
21
20
19
18
70
60
50
40
30
20
10
0
28
26
24
22
20
18
16
14
0
Efficiency
-4
Gain
-8
-12
-16
-20
-24
-28
44 V
48 V
52 V
Gain
Input Return Loss
g220701fa-gr7
g220701fa-gr6c
1675
1875
2075
2275
27
31
35
39
43
47
51
Frequency (MHz)
Output Power (dBm)
Rev. 04, 2018-05-17
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
6
Broadband Circuit Impedance (combined leads)
Z Source
Z Load
G
S
Z Source W
Z Load W
Freq
[MHz]
R
jX
R
jX
1805
1840
1880
2100
2140
2170
1.95
2.01
–5.67
–6.27
–7.17
–9.38
–8.40
–9.07
12.02
11.94
11.33
10.39
10.31
10.50
5.87
3.94
3.15
0.02
–0.75
–2.23
2.43
9.95
11.40
11.61
Reference Circuit, tuned for 1805 MHz to 2170 MHz
DUT
GTVA220701FA V1
Test Fixture Part No.
PCB
LTN/GTVA220701FA V1
Rogers 4350, 0.762 mm [.030”] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF
Rev. 04, 2018-05-17
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
7
Reference Circuit (cont.)
RO4350, 30 MIL (60)
RO4350, 30 MIL
(62)
VGG
VDD
C201
C105
C202
C205
C103
C208
R101
C203
C207
C101
C204
RF_IN
RF_OUT
C206
C104
R102 C102
GTVA220701FA_OUT_02
GTVA220701FA_IN_02
gt va22 07 01f a_C D_02 _05 - 17 - 20 18
Reference circuit assembly diagram (not to scale)
Rev. 04, 2018-05-17
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
8
Reference Circuit (cont.)
Components Information
Component
In
Description
Manufacturer
P/N
C101
Capacitor, 2.4 pF
Capacitor, 20 pF
Capacitor, 1 pF
ATC
ATC600F2R4JT250XT
ATC600F200JT250XT
ATC600F1R0JT250XT
UMK325C7106MM-T
ERJ-8GEYJ100V
C102, C103
C104
ATC
ATC
C105
Capacitor, 10 µF
Resistor, 10 ohms
Resistor, 330 ohms
Taiyo Yuden
R101
Panasonic Electronic Components
Panasonic Electronic Components
R102
ERJ-3GEYJ331V
Out
C201
Capacitor, 47 µF
Capacitor, 10 µF
Capacitor, 1 pF
Capacitor, 20 pF
Capacitor, 0.7 pF
Capacitor, 0.3 pF
Cornell Dubilier Electronics (CDE)
SEK470M100ST
C202, C208
C203
Taiyo Yuden
ATC
UMK325C7106MM-T
ATC600F1R0JT250XT
ATC600F200JT250XT
ATC600F0R7JT250XT
ATC600F0R3JT250XT
C204, C205
C206
ATC
ATC
C207
ATC
Package Outline Specifications, next page
Rev. 04, 2018-05-17
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
9
Package Outline Specifications
Package H-37265J-2
2X 6.35
[.250]
45° X .64
[.025]
2X 2.59±.51
D
G
[.102±.020]
LID
10.16±.25
[.400±.010]
FLANGE
10.16
[.400]
(15.34
[.604])
C
L
FLANGE
4X R0.63
[R.025] MAX
C
L
10.16±.25
[.400±.010]
SPH 1.57
[.062]
3.61±.38
[.142±.015]
H-37265J-2_02_po_05-29-2015
1.02
[.040]
10.16
[.400]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ꢀ.12ꢁ ꢂ.ꢀꢀ5ꢃ unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: ꢀ.1ꢀ + ꢀ.ꢀ51/-ꢀ.ꢀ25 mm ꢂ.ꢀꢀ4 +ꢀ.ꢀꢀ2/-ꢀ.ꢀꢀ1 inchꢃ.
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ.
Rev. 04, 2018-05-17
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA220701FA
10
Revision History
Revision
Date
Data Sheet
Advance
Page
all
Subjects (major changes at each revision)
01
02
2015-08-18
2016-04-01
Data Sheet reflects advance specification for product development
Product released to production. Add firm specifications. performance information, and reference
circuit information,
Production
all
03
04
2017-04-06
2018-05-17
Production
Production
1
2
Remove "Integrated ESD protection" from Features
Restructure tables for clarity.
All
Converted to Wolfspeed Data Sheet
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
www.wolfspeed.com
Rev. 04, 2018-05-17
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