GTVA261701FA [CREE]
Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 â 2690 MHz;
| 型号： | GTVA261701FA |
| 厂家： | 
CREE, INC |
| 描述： | Thermally-Enhanced High Power RF GaN on SiC HEMT 170 W, 50 V, 2620 â 2690 MHz |
| 文件： | 总10页 (文件大小：591K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GTVA261701FA
Thermally-Enhanced High Power RF GaN on SiC HEMT
170 W, 50 V, 2620 – 2690 MHz
Description
The GTVA261701FA is a 170-watt (P ) GaN on SiC high electron
3dB
mobility transistor (HEMT) for use in multi-standard cellular power
amplifier applications. It features input matching, high efficiency, and
a thermally-enhanced package with earless flange.
GTVA261701FA
Package H-37265J-2
Features
Single-carrier WCDMA Drive-up
•ꢀ GaN on SiC HEMT technology
•ꢀ Input Matched
VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
•ꢀ Typical CW performance, 2690 MHz, 48 V, single
32
28
24
20
16
12
8
80
60
40
20
0
side
- Output power at P
- Efficiency = 75%
- Gain = 15 dB
= 170 W
3dB
Efficiency
•ꢀ Human Body Model, Class 1B (per ANSI/ESDA/
JEDEC JS-001)
•ꢀ Capable of handling 10:1 VSWR @48 V, 40 W (CW)
Gain
output power
-20
-40
-60
-80
•ꢀ RoHS-compliant
PAR @ 0.01% CCDF
4
0
g261701fa-gr1a
27
31
35
39
43
47
51
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (tested in Wolfspeed test fixture)
= 48 V, I = 200 mA, P = 40 W avg, ƒ = 2690 MHz. 3GPP WDMA signal, 3.84 MHz channel bandwidth, 10 dB peak/
V
DD
DQ
OUT
average @ 0.01% CCDF.
Characteristic
Gain
Symbol
Min
16
Typ
17
Max
—
Unit
dB
G
ps
Drain Efficiency
hD
38
43
—
%
Adjacent Channel Power Ratio
ACPR
—
–29
–25
dBc
All published data at T
= 25°C unless otherwise indicated
CASE
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Rev. 05, 2018-05-08
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTVA261701FA
2
DC Characteristics
Characteristic
Conditions
Symbol
Min
150
—
Typ
—
Max
—
Unit
V
Drain-source Breakdown Voltage
Drain-source Leakage Current
Gate Threshold Voltage
V
GS
= –8 V, I = 21 mA
V
(BR)DSS
D
V
GS
= –8 V, V = 50 V
I
DSS
—
5
mA
V
DS
V
= 10 V, I = 21 mA
V
GS(th)
–3.8
–3.0
–2.3
DS
D
Recommended Operating Conditions
Parameter
Conditions
Symbol
Min
0
Typ
—
Max
50
Unit
V
Drain Operating Voltage
Gate Quiescent Voltage
V
DD
V
= 50 V, I = 1.0 A
V
GS(Q)
—
–2.8
—
V
DS
D
Absolute Maximum Ratings
Parameter
Symbol
Value
125
Unit
V
Drain-source Voltage
Gate-source Voltage
Gate Current
V
DSS
V
GS
–10 to +2
20
V
I
mA
A
G
Drain Current
I
7.5
D
Junction Temperature
Storage Temperature Range
T
225
°C
°C
J
T
–65 to +150
STG
Operation above the maximum values listed here may cause permanent damage. Maximum ratings are absolute ratings;
exceeding only one of these values may cause irreversible damage to the component. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability. For reliable continuous operation, the device should be operated
within the operating voltage range (V ) specified above.
DD
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance
R
1.07
°C/W
JC
q
(T
CASE
= 70 °C, 50 W (CW), V
= 48 V, 2620 MHz)
DD
Ordering Information
Type and Version
GTVA261701FA V1 RO
GTVA261701FA V1 R2
Order Code
Package
Shipping
GTVA261701FA-V1-R0
GTVA261701FA-V1-R2
H-37265J-2, earless flange
H-37265J-2, earless flange
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Rev. 05, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA261701FA
3
Typical Performance (data taken in an Wolfspeed production test fixture)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 200 mA, ƒ = 2655 MHz
3GPP WCDMA signal,
VDD = 48 V, IDQ = 200 mA, ƒ = 2690 MHz
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
10 dB APR, 3.84 MHz bandwidth
32
28
24
20
16
12
8
80
60
40
20
0
32
28
24
20
16
12
8
80
60
40
20
0
Efficiency
Efficiency
Gain
Gain
-20
-40
-60
-80
-20
-40
-60
-80
PAR @ 0.01% CCDF
4
4
PAR @ 0.01% CCDF
0
g261701fa-gr1c
0
g261701fa-gr1b
27
31
35
39
43
47
51
27
31
35
39
43
47
51
Average Output Power (dBm)
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 200 mA, ƒ = 2655 MHz,
3GPP WCDMA signal,
Single-carrier WCDMA Drive-up
VDD = 48 V, IDQ = 200 mA, ƒ = 2620 MHz,
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
10 dB PAR, 3.84 MHz bandwidth
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
Efficiency
Efficiency
ACP Low
ACP Up
ACP Low
ACP Up
g261701fa-gr2a
g261701fa-gr2b
27
31
35
39
43
47
51
27
31
35
39
43
47
51
Average Output Power (dBm)
Average Output Power (dBm)
Rev. 05, 2018-05-08
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA261701FA
4
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
Single-carrier WCDMA
Broadband Performance
VDD = 48 V, IDQ = 200 mA, POUT = 46.0dBm,
3GPP WCDMA signal, 10.0 dB PAR
VDD = 48 V, IDQ = 200 mA, ƒ = 2690 MHz,
3GPP WCDMA signal,
10 dB PAR, 3.84 MHz bandwidth
-5
-15
-25
-35
-45
-55
-65
65
55
45
35
25
15
5
19
18
17
16
15
55
50
45
40
35
Efficiency
Gain
ACP Low
ACP Up
Efficiency
g261701fa-gr2c
g261701fa-gr3
27
31
35
39
43
47
51
2550
2600
2650
2700
2750
Average Output Power (dBm)
Frequency (MHz)
Single-carrier WCDMA
Broadband Performance
VDD = 48 V, IDQ = 200 mA, POUT = 46 dBm,
3GPP WCDMA signal, 10.0 dB PAR
CW Performance
VDD = 48 V, IDQ = 200 mA
-10
-15
-20
-25
-30
-35
-10
-15
-20
-25
-30
20
19
18
17
16
15
14
13
12
80
70
60
50
40
30
20
10
0
Return Loss
Gain
Efficiency
ACP Up
g261701fa-gr4 -35
g261701fa-gr5
2550
2600
2650
2700
2750
27
31
35
39
43
47
51
55
Output Power (dBm)
Frequency (MHz)
Rev. 05, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA261701FA
5
Typical Performance (cont.)
CW Performance
at specified VDD
IDQ = 200 mA, ƒ = 2655 MHz
CW Performance
at specified VDD
IDQ = 200 mA, ƒ = 2620 MHz
20
19
18
17
16
15
14
13
12
80
70
60
50
40
30
20
10
0
20
19
18
80
70
60
50
40
30
20
10
0
Gain
17
Gain
16
Efficiency
15
Efficiency
14
44 V
48 V
52 V
44 V
48 V
52 V
13
12
g261701fa-gr6b
g261701fa-gr6a
27
31
35
39
43
47
51
55
27
31
35
39
43
47
51
55
Output Power (dBm)
Output Power (dBm)
CW Performance
at specified VDD
IDQ = 200 mA, ƒ = 2690 MHz
Small Signal CW Perforrmance
VDD = 48 V, IDQ = 200 mA
20
-8
20
19
18
17
16
15
14
13
12
80
70
60
50
40
30
20
10
0
18
16
14
12
10
8
-12
-16
-20
-24
-28
-32
-36
-40
Gain
Gain
Efficiency
Input Return Loss
44 V
48 V
52 V
6
g261701fa-gr6c
4
2450
g261701fa-gr7
27
31
35
39
43
47
51
55
2550
2650
2750
2850
Output Power (dBm)
Frequency (MHz)
Rev. 05, 2018-05-08
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTVA261701FA
6
Load Pull Performance
D
Z Source
Z Load
G
S
Single side, pulsed CW signal: 10 µsec, 10% duty cycle; 48 V, 200 mA
P
3dB
Class AB
Max Output Power
Max Efficiency
Freq
[MHz]
Z
Z
[W]
Gain
[dB]
P
[dBm]
P
[W]
Efficiency
Z
[W]
Gain
[dB]
P
[dBm]
P
OUT
[W]
Efficiency
[%]
source
[W]
load
OUT
OUT
load
OUT
[%]
2620
2655
2690
12.0 – j 5.7
15.0 – j 8.0
16.6 – j10.0
2.9 – j2.0
2.6 – j2.3
2.8 – j2.2
15.0
14.8
14.6
53.81
53.68
53.71
240
233
235
64.8
65.3
66.7
2.1 – j0.0
2.2 – j0.2
2.1 – j0.2
16.7
16.3
16.1
51.62
51.76
51.93
145
150
156
76.9
75.9
77.0
See next page for reference circuit infomation
Rev. 05, 2018-05-08
4600 Silicon Drive
|
Durham, NC 27703
|
www.wolfspeed.com
GTVA261701FA
7
Reference Circuit tuned for 2620 to 2690 MHz
DUT
GTVA261701FA V1
Test Fixture Part No.
PCB
LTN/GTVA261701FA
Rogers 4350, 0.508 mm [.020"] thick, 2 oz. copper, εr = 3.66
Find Gerber files for this test fixture on the Wolfspeed Web site at www.wolfspeed.com/RF
VDD
C205
C105
C208
C104
C103
C206
C207
C213
GTVA261701FA
OUT_02A
L101
R101
VGG
C101
C202
C204
C201
RF_IN
RF_OUT
C102
C203
RO4350, 20 MIL
C212
C210
VDD
RO4350, 20 MIL (61)
C209 C211
GTVA261701FA_IN_02A
g t v a2 61 7 01 f a _ C D _ 0 5- 1 7- 2 01 8
Reference circuit assembly diagram (not to scale)
Rev. 05, 2018-05-08
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA261701FA
8
Reference Circuit (cont.)
Components Information
Component
In
Description
Manufacturer
P/N
C101, C103
C102
Capacitor, 10 pF
Capacitor, 1.3 pF
Capacitor, 0.047 µF
Capacitor, 100 µF
Inductor, 100 nH
Resistor, 10 ohms
ATC
ATC800A100JT250T
ATC800A1R3CT250T
101X43W474MV4E
ATC
C104
Johanson Dielectrics Inc.
C105
Panasonic Electronic Components EEE-FT1V101AP
ATC ATC0603WL101JT
Panasonic Electronic Components ERJ-8GEYJ100V
L101
R101
Out
C201, C212, C213
C202, C203
C204
Capacitor, 10 pF
Capacitor, 1.9 pF
Capacitor, 1 pF
ATC
ATC800A100JT250T
ATC800A1R9CT250T
ATC800A1R0CT250T
101X18W103MV4E
101X43W474MV4E
ATC
ATC
C205, C209
Capacitor, 10000 pF
Capacitor, 0.047 µF
Johanson Dielectrics Inc.
Johanson Dielectrics Inc.
C206, C207, C210,
C211
C208
Capacitor, 220 µF
Panasonic Electronic Components ECA-2AHG221
See next page for package mechanical specifications
Rev. 05, 2018-05-08
4600 Silicon Drive | Durham, NC 27703 | www.wolfspeed.com
GTVA261701FA
9
Package Outline Specifications
Package H-37265J-2
2X 6.35
[.250]
45° X .64
[.025]
2X 2.59±.51
D
G
[.102±.020]
LID
10.16±.25
[.400±.010]
FLANGE
10.16
[.400]
(15.34
[.604])
C
L
FLANGE
4X R0.63
[R.025] MAX
C
L
10.16±.25
[.400±.010]
SPH 1.57
[.062]
3.61±.38
[.142±.015]
H-37265J-2_02_po_05-29-2015
1.02
[.040]
10.16
[.400]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ꢀ.12ꢁ ꢂ.ꢀꢀ5ꢃ unless specified otherwise.
4. Pins: D – drain; G – gate; S – source.
5. Lead thickness: ꢀ.1ꢀ + ꢀ.ꢀ51/-ꢀ.ꢀ25 mm ꢂ.ꢀꢀ4 +ꢀ.ꢀꢀ2/-ꢀ.ꢀꢀ1 inchꢃ.
6. Gold plating thickness: 1.14 ꢀ.3ꢄ micron ꢂ45 15 microinchꢃ.
Rev. 05, 2018-05-08
4600 Silicon Drive
| Durham, NC 27703 | www.wolfspeed.com
GTVA261701FA
10
Revision History
Revision
Date
Data Sheet
Advance
Page
All
Subjects (major changes since last revision)
01
02
2015-05-29
2015-06-29
Data Sheet reflects advance specification for product development
Data Sheet reflects preliminary specification
Preliminary
All
Information for production-released product, including firm specifications, performance curves,
load pull table, and reference circuit information.
03
2016-03-28
Production
3 to 8
1
2
Remove "Integrated ESD protection" from Features
Restructure tables for clarity.
04
05
2017-04-06
2018-05-08
Production
Production
All
Converted to Wolfspeed Data Sheet
For more information, please contact:
4600 Silicon Drive
Durham, North Carolina, USA 27703
www.wolfspeed.com/RF
Sales Contact
RFSales@wolfspeed.com
RF Product Marketing Contact
RFMarketing@wolfspeed.com
919.407.7816
Notes
Disclaimer
Specifications are subject to change without notice. Cree, Inc. believes the information contained within this data sheet
to be accurate and reliable. However, no responsibility is assumed by Cree for any infringement of patents or other rights
of third parties which may result from its use. No license is granted by implication or otherwise under any patent or pat-
ent rights of Cree. Cree makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose. “Typical” parameters are the average values expected by Cree in large quantities and are provided for
information purposes only. These values can and do vary in different applications and actual performance can vary over
time. All operating parameters should be validated by customer’s technical experts for each application. Cree products
are not designed, intended or authorized for use as components in applications intended for surgical implant into the
body or to support or sustain life, in applications in which the failure of the Cree product could result in personal injury or
death or in applications for planning, construction, maintenance or direct operation of a nuclear facility.
Copyright © 2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Wolfspeed™ and the Wolfspeed logo are trademarks of Cree, Inc.
www.wolfspeed.com
Rev. 05, 2018-05-08
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