PTFB211501E [INFINEON]
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz; 热增强型高功率射频LDMOS FET的150 W, 2110年至2170年兆赫型号: | PTFB211501E |
厂家: | Infineon |
描述: | Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHz |
文件: | 总13页 (文件大小:355K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
相关型号:
PTFB211501EF
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501EV1R0
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501EV1R0XTMA1
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501EV1R250
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501EV1R250XTMA1
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PTFB211501EV4
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501EV4R250
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-36248-2, 2 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501F
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501FV1R0
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501FV1R0XTMA1
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501FV1R250
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211501FV1R250XTMA1
RF Power Field-Effect Transistor,Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211503EFL
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
PTFB211503EL
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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PTFB211503ELV1R0
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
PTFB211503ELV1R0XTMA1
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INFINEON
PTFB211503ELV1R250
RF Power Field-Effect Transistor, 1-Element, S Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, GREEN, CERAMIC, H-33288-6, 6 PINWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
PTFB211503ELV1R250XTMA1
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
PTFB211503FL
Thermally-Enhanced High Power RF LDMOS FETs 150 W, 2110 – 2170 MHzWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
PTFB211503FLV2R0
Thermally-Enhanced High Power RF LDMOS FETsWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 174
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INFINEON
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