CTL0402PS-R3 [CTMICRO]
P-Channel Enhancement MOSFET;
| 型号： | CTL0402PS-R3 |
| 厂家： | 
CT Micro International Corporation |
| 描述： | P-Channel Enhancement MOSFET |
| 文件： | 总11页 (文件大小：900K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CTL0402PS-R3
P-Channel Enhancement MOSFET
Features
Description
The CTL0402PS-R3 is the P-Channel logic enhancement
Drain-Source Breakdown Voltage VDSS -20 V
mode power field effect transistors are produced using
high cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
resistance. These devices are particularly suited for low
voltage application such as cellular phone and notebook
computer power management and other battery powered
circuits where high-side switching, and low in-line power
loss are needed in a very small outline surface mount
package.
Drain-Source On-Resistance
RDS(ON) 52m, at VGS= -10V, ID= -4.2A
RDS(ON) 60m, at VGS= -4.5V, ID= -3.4A
RDS(ON) 70m, at VGS= -2.5V, ID= -2.5A
RDS(ON) 90m, at VGS= -1.8V, ID= -1.7A
Continuous Drain Current at TC=25
℃ID = -4.0A
Advanced high cell density Trench Technology
RoHS Compliance & Halogen Free
Applications
Power Management
Lithium Ion Battery
Package Outline
Schematic
Drain
Drain
Gate
Gate
Source
Source
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CTL0402PS-R3
P-Channel Enhancement MOSFET
Absolute Maximum Rating at 25oC
Symbol
VDS
VGS
ID
Parameters
Test Conditions
Min
V
Notes
Drain-Source Voltage
-20
±8
Gate-Source Voltage
V
Continuous Drain Current
Pulsed Drain Current
-4
A
1
1
2
-15
A
IDM
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
1.4
W
°C
°C
PD
-55 to 150
-55 to 150
TSTG
TJ
Thermal Characteristics
Symbol
Parameters
Test Conditions
Min
--
Typ
Max
--
Units Notes
Thermal Resistance
Junction-Ambient (t=10s)
RӨJA4
oC /W
1,4
90
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CTL0402PS-R3
P-Channel Enhancement MOSFET
Electrical Characteristics TA = 25°C (unless otherwise specified)
Static Characteristics
Symbol
BVDSS
IDSS
Parameters
Test Conditions
VGS= 0V, ID= -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
Min
Typ
Max
-
Units Notes
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
-20
-
-
V
-
-
-1
µ A
nA
±100
-
IGSS
On Characteristics
Symbol
RDS(ON)
VGS(th)
Parameters
Test Conditions
VGS = -10V, ID = -4.2A
VGS = -4.5V, ID = -3.4A
VGS = -2.5V, ID = -2.5A
VGS = -1.8V, ID = -1.7A
VGS = VDS, I ID =-250μA
Min
Typ
52
60
70
90
---
Max
62
Units Notes
-
-
mΩ
72
mΩ
3
mΩ
Drain-Source On-Resistance
Gate-Source Threshold Voltage
91
-
120
-1.0
mΩ
-0.4
V
3
Dynamic Characteristics
Symbol
Parameters
Test Conditions
VGS =0V,
Min
Typ
745
65
Max
Units Notes
Input Capacitance
-
-
-
-
-
-
CISS
Output Capacitance
VDS =-15V
f=1MHz
pF
COSS
Reverse Transfer Capacitance
21
CRSS
Switching Characteristics
Symbol
TD(ON)
TR
Parameters
Turn-On Delay Time
Rise Time
Test Conditions
VDS = -15V ,
VGS = -10V,
RG = 6Ω,
Min
Typ
32
Max
Units
Notes
-
-
-
-
-
-
-
-
-
-
-
-
-
-
18
ns
Turn-Off Delay Time
Fall Time
57
TD(OFF)
TF
RL= 15Ω,
4.5
10
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
QG
VDS = -15V ,
VGS = -4.5V,
ID = -4.2A
2.8
2.5
nC
QGS
QGD
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CTL0402PS-R3
P-Channel Enhancement MOSFET
Drain-Source Diode Characteristics
Symbol
Parameters
Test Conditions
Min
Typ
-0.8
-
Max
-
Units
Notes
Body Diode Forward Voltage
Body Diode Continuous Current
VGS = 0V, ID = -1.2A
-
-
V
A
VSD
-1.2
1
ISD
Note:
1. The power dissipation is limited by 150℃ junction temperature.
2. Device mounted on a glass-epoxy board
FR-4
25.4 × 25.4 mm .
2 Oz Copper
Actual Size
3. The data tested by pulsed , pulse width ≦ 300μs , duty cycle ≦ 2%
4. Thermal Resistance follow JESD51-3.
CT Micro
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CTL0402PS-R3
P-Channel Enhancement MOSFET
Typical Characteristic Curves
CT Micro
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CTL0402PS-R3
P-Channel Enhancement MOSFET
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CTL0402PS-R3
P-Channel Enhancement MOSFET
Test Circuits & Waveforms
Figure 9: Gate Charge Test Circuit
Figure 10: Gate Charge Waveform
Figure 11: Switching Time Test Circuit
Figure 12: Switching Time Waveform
CT Micro
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CTL0402PS-R3
P-Channel Enhancement MOSFET
Package Dimension (SOT-23)
Note: Dimensions in mm
Recommended pad layout for surface mount leadform
Note: Dimensions in mm
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CTL0402PS-R3
P-Channel Enhancement MOSFET
Marking Information
0402: Device Number
Ordering Information
Part Number
Description
Quantity
CTL0402PS-R3
SOT-23 Reel
3000 pcs
CT Micro
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CTL0402PS-R3
P-Channel Enhancement MOSFET
Reflow Profile
Profile Feature
Pb-Free Assembly Profile
150°C
Temperature Min. (Tsmin)
Temperature Max. (Tsmax)
Time (ts) from (Tsmin to Tsmax)
Ramp-up Rate (tL to tP)
200°C
60-120 seconds
3°C/second max.
217°C
Liquidous Temperature (TL)
Time (tL) Maintained Above (TL)
Peak Body Package Temperature
Time (tP) within 5°C of 260°C
Ramp-down Rate (TP to TL)
Time 25°C to Peak Temperature
60 – 150 seconds
260°C +0°C / -5°C
30 seconds
6°C/second max
8 minutes max.
CT Micro
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CTL0402PS-R3
P-Channel Enhancement MOSFET
DISCLAIMER
CT MICRO RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. CT MICRO DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
______________________________________________________________________________________
CT MICRO ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT EXPRESS WRITTEN APPROVAL OF CT MICRO INTERNATIONAL CORPORATION.
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical
implant into the body, or (b) support or sustain life,
or (c) whose failure to perform when properly used
in accordance with instruction for use provided in
the labelling, can be reasonably expected to result
in significant injury to the user.
2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.
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