BTC4505N3 [CYSTEKEC]
High Voltage NPN Epitaxial Planar Transistor; 高电压NPN外延平面晶体管
| 型号： | BTC4505N3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | High Voltage NPN Epitaxial Planar Transistor |
| 文件： | 总4页 (文件大小：155K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C210N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 1/4
CYStech Electronics Corp.
High Voltage NPN Epitaxial Planar Transistor
BTC4505N3
Features
• High breakdown voltage. (BVCEO =400V)
• Low saturation voltage, typically VCE(sat) =0.1V at IC/IB=10mA/1mA.
• Complementary to BTA1759N3
Symbol
Outline
BTC4505N3
SOT-23
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Limit
Unit
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
VCBO
VCEO
VEBO
IC
400
400
V
V
6
V
300
mA
W
°C
°C
Power Dissipation
Pd
0.225
150
Junction Temperature
Storage Temperature
Tj
Tstg
-55~+150
BTC4505N3
CYStek Product Specification
Spec. No. : C210N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 2/4
CYStech Electronics Corp.
Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
BVCBO
BVCEO
BVEBO
ICBO
400
-
-
V
IC=50µA, IE=0
400
-
-
V
IC=1mA, IB=0
6
-
-
V
IE=50µA, IC=0
-
-
10
20
10
0.5
1.5
270
-
µA
nA
µA
V
VCB=400V, IE=0
VCE=300V, REB=4k
VEB=6V,IC=0
Ω
ICER
-
-
IEBO
-
-
*VCE(sat)
*VBE(sat)
hFE
-
0.1
IC=10mA, IB=1mA
IC=10mA, IB=1mA
-
100
-
V
-
MHz
pF
-
20
7
VCE=10V, IC=10mA
fT
Cob
VCE=10V, IC=10mA, f=10MHz
VCB=10V, f=1MHz
-
-
*Pulse Test : Pulse Width ≤380µs, Duty Cycle≤2%
BTC4505N3
CYStek Product Specification
Spec. No. : C210N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 3/4
CYStech Electronics Corp.
Characteristic Curves
Saturation Voltage vs Collector Current
Current Gain vs Collector Current
10000
1000
100
1000
100
VCE = 10V
VCE(SAT) @ IC = 20IB
VCE = 5V
10
VCE = 1V
VCE(SAT) @ IC = 10IB
10
1
1
10
Collector Current---IC(mA)
100
1
10
100
1000
Collector Current---IC(mA)
Saturation Voltage vs Collector Current
Power Derating Curve
250
200
150
100
50
1000
VBE(SAT) @ IC =10IB
100
0
1
10
100
1000
0
50
100
150
200
Collector Current---IC(mA)
Ambient Temperature---TA(℃)
BTC4505N3
CYStek Product Specification
Spec. No. : C210N3
Issued Date : 2003.05.09
Revised Date : 2004.04.02
Page No. : 4/4
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
A
L
3
3D
S
B
1
2
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
V
G
Style: Pin 1.Base 2.Emitter 3.Collector
C
D
K
H
J
*: Typical
Inches
Millimeters
Inches
Min. Max.
Millimeters
DIM
DIM
Min.
Max.
Min.
Max.
3.04
1.60
1.30
0.50
2.30
0.10
Min.
Max.
0.177
0.67
1.15
2.75
0.65
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0630
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0005 0.0040
2.80
1.20
0.89
0.30
1.70
0.013
J
K
L
0.0034 0.0070
0.0128 0.0266
0.0335 0.0453
0.0830 0.1083
0.0098 0.0256
0.085
0.32
0.85
2.10
0.25
S
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTC4505N3
CYStek Product Specification
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