MTB020N10RJ3-0-T3-G [CYSTEKEC]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB020N10RJ3-0-T3-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：497K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 1/9
N-Channel Enhancement Mode Power MOSFET
BVDSS
100V
34A
MTB020N10RJ3
ID@ TC=25°C, VGS=10V
19mΩ
24mΩ
VGS=10V, ID=10A
RDSON(TYP)
VGS=4.5V, ID=7A
Features
• Low Gate Charge
• Simple Drive Requirement
• Fast Switching Characteristic
• Pb-free lead plating and halogen-free package
Symbol
Outline
MTB020N10RJ3
TO-252(DPAK)
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
Package
TO-252
(Pb-free lead plating and halogen-free package)
Shipping
2500 pcs / Tape & Reel
MTB020N10RJ3-0-T3-G
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB020N10RJ3
CYStek Product Specification
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 2/9
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
100
±20
34
24
8.1
6.8
6.6
5.5
110
32
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
ID
(Note 2)
(Note 2)
(Note 3)
(Note 3)
(Note 1)
IDSM
A
IDM
IAS
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=15A, VDD=25V
Repetitive Avalanche Energy@ L=0.05mH
Total Power Dissipation @ TC=25°C
EAS
EAR
112
6
60
mJ
PD
30
Total Power Dissipation @ TC=100°C
2.5
1.0
1.7
0.7
Total Power Dissipation @ TA=25°C
Total Power Dissipation @ TA=70°C
Total Power Dissipation @ TA=25°C
Total Power Dissipation @ TA=70°C
(Note 2)
(Note 2)
(Note 3)
(Note 3)
W
PDSM
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Thermal Resistance, Junction-to-ambient, max (Note 3)
Symbol
RθJC
Value
Unit
°C/W
2.5
50
75
RθJA
Note : 1. Pulse width limited by maximum junction temperature
2. When the device is mounted on a 1 in² FR-4 board with 2 oz. copper.
3. When the device is mounted on the minimum pad size recommended.
4. 100% tested by conditions of L=0.1mH, IAS=20A, VGS=10V, VDD=25V.
5. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
6. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in
any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used
if the PCB allows it.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
MTB020N10RJ3
100
-
-
0.1
-
-
V
VGS=0V, ID=250μA
°
Reference to 25 C, ID=250μA
°
V/ C
CYStek Product Specification
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 3/9
VGS(th)
GFS
IGSS
1
-
-
-
-
-
-
-
20.5
-
-
-
2.5
-
V
S
nA
VDS = VGS, ID=250μA
VDS =10V, ID=20A
±
100
1
±
VGS= 20V, VDS=0V
VDS =80V, VGS =0V
VDS =80V, VGS =0V, Tj=125°C
VGS =10V, ID=10A
IDSS
μA
25
25
37
19
24
Ω
m
*RDS(ON)
VGS =4.5V, ID=7A
Dynamic
*Qg
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
Rg
-
-
-
-
-
-
-
-
-
-
-
28.3
5.2
5.7
13.4
18.6
41.6
6.6
1430
103
14
-
-
-
-
-
-
-
-
-
-
-
nC
ID=10A, VDS=50V, VGS=10V
VDS=50V, ID=10A, VGS=10V,
ns
Ω
RG=1
pF
VGS=0V, VDS=50V, f=1MHz
VGS=15mV, VDS=0V, f=1MHz
Ω
3.1
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
34
136
1.2
-
A
0.84
25.3
24.7
V
ns
nC
IS=10A, VGS=0V
IF=10A, VGS=0V, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended soldering footprint
MTB020N10RJ3
CYStek Product Specification
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
60
50
40
30
20
10
0
10V,9V,8V,7V,6V,5V,4.5V
4V
3.5V
0.8
0.6
0.4
3V
μ
ID=250 A,
VGS=0V
VGS=2.5V
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
DS, Drain-Source Voltage(V)
8
10
V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
100
1.2
VGS=0V
1
0.8
0.6
0.4
0.2
Tj=25°C
VGS=4.5V
VGS=10V
Tj=150°C
10
0
2
4
6
8
10
0.01
0.1
1
ID, Drain Current(A)
10
100
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
160
120
80
2.8
ID=10A
2.4
2
VGS=10V, ID=10A
1.6
1.2
0.8
0.4
0
40
RDS(ON)@Tj=25°C : 19mΩ typ.
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB020N10RJ3
CYStek Product Specification
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 5/9
Typical Characteristics (Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
ID=1mA
1000
0.8
0.6
0.4
0.2
C
oss
100
10
ID=250μA
Crss
5
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
10 15 20 25 30 35 40 45 50
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
VDS=10V
Gate Charge Characteristics
100
10
10
VDS=50V
8
6
4
2
0
VDS=20V
VDS=15V
1
VDS=80V
0.1
0.01
Ta=25°C
Pulsed
ID=10A
0
5
10
15
20
25
30
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
40
35
30
25
20
15
10
5
1000
RDSON
Limited
100
10
1
100μs
1ms
10ms
100ms
1s
TC=25°C, Tj=175°C
θ
VGS=10V, R JC=2.5°C/W
DC
JC
θ
VGS=10V, R =2.5°C/W
Single Pulse
0
0.1
25
50
75
100
125
150 175
200
0.1
1
10
100
1000
VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTB020N10RJ3
CYStek Product Specification
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 6/9
Typical Characteristics (Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
60
3500
3000
2500
2000
1500
1000
500
VDS=10V
50
TJ(MAX)=175°C
TC=25°C
θ
R
JC=2.5°C/W
40
30
20
10
0
0
0.001
0.01
0.1
1
10
100
1000
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
0.1
JC
θ
θ
1.R JC(t)=r(t)*R
0.05
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.02
0.01
JC=2.5 C/W
θ
4.R
°
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB020N10RJ3
CYStek Product Specification
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTB020N10RJ3
CYStek Product Specification
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 8/9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
100°C
150°C
150°C
200°C
60-120 seconds
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB020N10RJ3
CYStek Product Specification
Spec. No. : C745J3
Issued Date : 2018.03.14
Revised Date :
CYStech Electronics Corp.
Page No. : 9/9
TO-252 Dimension
Marking:
4
Device
Name
B020
N10R
□□□□
Date
Code
2
3
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
Inches
Min.
Millimeters
Inches
Millimeters
DIM
DIM
Max.
0.094
0.005
0.048
0.034
0.034
0.023
0.023
0.264
0.215
0.244
Min.
Max.
2.400
0.127
1.210
0.860
0.860
0.580
0.580
6.700
5.460
6.200
Min.
0.086
0.172
Max.
0.094
0.188
Min.
2.186
4.372
Max.
2.386
4.772
A
A1
B
b
b1
C
C1
D
D1
E
0.087
0.000
0.039
0.026
0.026
0.018
0.018
0.256
0.201
0.236
2.200
0.000
0.990
0.660
0.660
0.460
0.460
6.500
5.100
6.000
e
e1
H
K
L
L1
L2
L3
P
0.163 REF
0.190 REF
0.386 0.409
0.114 REF
4.140 REF
4.830 REF
9.800 10.400
2.900 REF
0.055
0.024
0.067
0.039
1.400
0.600
1.700
1.000
0.026 REF
0.211 REF
0.650 REF
5.350 REF
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB020N10RJ3
CYStek Product Specification
相关型号：
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