MTB030P06KH8-0-T6-G [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB030P06KH8-0-T6-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总10页 (文件大小：625K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 1/10
P-Channel Enhancement Mode Power MOSFET
BVDSS
ID@VGS=10V, TC=25°C
-60V
-34A
-5.9A
MTB030P06KH8
ID@VGS=10V, TA=25°C
RDS(ON)@VGS=-10V, ID=-6A
RDS(ON)@VGS=-4.5V, ID=-4A
RDS(ON)@VGS=-4V, ID=-3A
21.4 mΩ(typ)
35.6 mΩ(typ)
42.6 mΩ(typ)
Features
• Low On Resistance
• Simple Drive Requirement
• Low Gate Charge
• Fast Switching Characteristic
• ESD protected gate
• RoHS compliant package
Symbol
Outline
DFN5×6
MTB030P06KH8
Pin 1
G：Gate D：Drain S：Source
Ordering Information
Device
Package
Shipping
DFN 5 ×6
MTB030P06KH8-0-T6-G
3000 pcs / tape & reel
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T6 : 3000 pcs / tape & reel,13” reel
Product rank, zero for no rank products
Product name
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 2/10
Absolute Maximum Ratings (TC=25°C)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage (Note 1)
Gate-Source Voltage
VDS
VGS
-60
±20
-34*
-24*
-5.9
-4.7
-110*
-24
Continuous Drain Current @TC=25°C, VGS=-10V
Continuous Drain Current @TC=100°C, VGS=-10V
Continuous Drain Current @TA=25°C, VGS=-10V
Continuous Drain Current @TA=70°C, VGS=-10V
Pulsed Drain Current
(Note 5)
(Note 5)
(Note 2)
(Note 2)
(Note 3)
(Note 3)
ID
IDSM
A
IDM
IAS
Avalanche Current
Single Pulse Avalanche Energy @ L=0.5mH, ID=-24 Amps,
VDD=-15V
Repetitive Avalanche Energy
EAS
EAR
PD
144
(Note 4)
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
mJ
W
7.5
75
37.5
2
TC=25°C
TC=100°C
TA=25°C
Power Dissipation
PDSM
1.3
TA=70°C
Operating Junction and Storage Temperature
Tj, Tstg -55~+175
*Drain current limited by maximum junction temperature
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max (Note 2)
Symbol
RθJC
RθJA
Value
2
62
Unit
°C/W
°
Note : 1.The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in² FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The value in any given application depends on the user’s specific board design. The
power dissipation PDSM is based on RθJAand the maximum allowed junction temperature of 150°C, and the maximum
temperature of 175°C may be used if the PCB allows it.
3. Pulse width limited by junction temperature TJ(MAX)=175°C.
°
4. Ratings are based on low frequency and low duty cycles to keep initial TJ=25 C. 100% tested by conditions of
VDD=-15V, ID=-12A, L=0.5mH, VGS=-10V.
5. Calculated continuous drain current based on maximum allowable junction temperature.
6. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
7. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 3/10
Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
∆BVDSS/∆Tj
VGS(th)
-60
-
-36
-
17.3
-
-
-
V
mV/°C
V
VGS=0V, ID=-250μA
-
-1
-
-
-
-
-
-
-
Reference to 25°C, ID=-250μA
VDS =-10V, ID=-1mA
VDS =-5V, ID=-10A
-2.5
-
10
1
*GFS
IGSS
S
±
±
VGS= 16V
μA
-
-
VDS =-60V, VGS =0V
VDS =-48V, VGS =0V, Tj=55°C
VGS =-10V, ID=-6A
VGS =-4.5V, ID=-4A
VGS =-4V, ID=-3A
IDSS
5
21.4
35.6
42.6
28
47
56
Ω
m
*RDS(ON)
Dynamic
*Qg
28.5
4.9
8.4
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
VDD=-48V, ID=-6A,VGS=-10V
VDD=-30V, ID=-1A, VGS=-10V,
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
14
18.8
68.2
66.2
1453
218
120
ns
pF
A
Ω
RG=6
VGS=0V, VDS=-20V, f=1MHz
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
-34
-110
-1.2
-
-0.78
15
8
V
ns
nC
IS=-6A, VGS=0V
VGS=0V, IF=-6A, dIF/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 4/10
Recommended Soldering Footprint & Stencil Design
unit : mm
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 5/10
Typical Characteristics
Normalized Brekdown Voltage vs Ambient
Temperature
Typical Output Characteristics
1.4
1.2
1
100
80
60
40
20
0
Tj=25°C
-10V, -9V,-8V
-7V
-6V
-5V
0.8
0.6
-4.5V
-4V
μ
ID=-250 A,
VGS=0V
VGS=-3.5V
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
100
1.2
1
VGS=0V
VGS=-4V
VGS=-4.5V
Tj=25°C
0.8
0.6
0.4
0.2
Tj=150°C
VGS=-10V
10
0
4
8
12
16
20
0.1
1
10
100
-ID, Drain Current(A)
-IS, Source Drain Current(A)
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
Normalized Drain-Source On-State Resistance vs
Junction Tempearture
500
2.2
450
400
350
300
250
200
150
100
50
2
1.8
1.6
1.4
1.2
1
VGS=-10V, ID=-6A
ID=-6A
0.8
0.6
0.4
0.2
RDS(ON)@Tj=25°C : 21.4mΩ typ.
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 6/10
Typical Characteristics(Cont.)
Normalized Threshold Voltage vs Junction
Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.6
1.4
1.2
1
Ciss
1000
ID=-1mA
C
oss
0.8
0.6
0.4
0.2
100
10
Crss
μ
ID=-250 A
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
100
10
8
6
4
2
0
VDS=-30V
VDS=-15V
1
VDS=-48V
VDS=-10V
Pulsed
0.1
TA=25°C
ID=-6A
28
0.01
0.001
0.01
0.1
1
10
0
4
8
12
16
20
24
32
-ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
40
1000
35
30
25
20
15
10
5
100
10
1
100μs
1ms
10ms
100ms
DC
JC
θ
VGS=-10V, R =2°C/W
TC=25°C, Tj=175°C, VGS=-10V
θ
R
JC=2°C/W, Single Pulse
0
0.1
25
50
75
100
125
150
175
200
0.1
1
10
100
1000
-VDS, Drain-Source Voltage(V)
TC, Case Temperature(°C)
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 7/10
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
100
80
60
40
20
0
1000
900
800
700
600
500
400
300
200
100
0
TJ(MAX)=175°C
TC=25°C
VDS=-10V
θ
R
JC=2°C/W
0
2
4
6
8
10
0.0001
0.001
0.01
Pulse Width(s)
0.1
1
10
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
0.2
0.1
JC
θ
1.RθJC(t)=r(t)*R
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.05
0.02
0.01
JC
θ
4.R =2 °C/W
0.1
Single Pulse
0.01
0.0001
0.001
0.01
0.1
1
10
t1, Square Wave Pulse Duration(s)
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 8/10
Reel Dimension
Carrier Tape Dimension
Pin #1
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 9/10
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB030P06KH8
CYStek Product Specification
Spec. No. : C104H8
Issued Date : 2016.04.29
Revised Date :
CYStech Electronics Corp.
Page No. : 10/10
DFN5×6 Dimension
Marking:
Device Name
Date Code
B030
P06K
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2
nd code : month code, Jan→A, Feb→B, Mar→C,
Apr→D, May→E, Jun→F, Jul→G, Aug→H,
Sep→J, Oct→K, Nov→L, Dec→M
3
rd and 4th codes : prodcution serial number, 01~99
8-Lead DFN5×6 Plastic Package
CYS Package Code : H8
Millimeters
DIM
Inches
Min.
0.031
0.000
0.014
Millimeters
Inches
DIM
Min.
0.80
0.00
0.35
Max.
Max.
0.039
0.002
0.019
Min.
5.70
Max.
5.90
Min.
Max.
A
A1
b
1.00
0.05
0.49
E
e
H
L1
G
K
0.224
0.232
1.27 BSC
0.050 BSC
5.95
0.10
6.20
0.18
0.234
0.004
0.244
0.007
c
0.254 REF
0.010 REF
D
F
4.90
5.10
0.193
0.201
0.60 REF
4.00 REF
0.024 REF
0.157 REF
1.40 REF
0.055 REF
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB030P06KH8
CYStek Product Specification
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