MTB040P04N3-0-T1-G [CYSTEKEC]
P-Channel Enhancement Mode MOSFET;
| 型号： | MTB040P04N3-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 1/ 9
P-Channel Enhancement Mode MOSFET
BVDSS
-40V
-3.2A
ID@TA=25C, VGS=-10V
RDSON@VGS=-10V, ID=-2.5A
RDSON@VGS=-4.5V, ID=-2A
MTB040P04N3
47mΩ (typ.)
57mΩ (typ.)
Features
• Advanced trench process technology
• Super high density cell design for extremely low on resistance
• Reliable and rugged
• Compact and low profile SOT-23 package
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
SOT-23
MTB040P04N3
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
MTB040P04N3-0-T1-G
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 2/ 9
Absolute Maximum Ratings (Ta=25C)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-40
±20
-3.2
-2.6
-30
V
A
Continuous Drain Current @TA=25C, VGS=-4.5V (Note 1)
Continuous Drain Current @TA=70C, VGS=-4.5V (Note 1)
Pulsed Drain Current
Maximum Power Dissipation (Note 1)
Linear Derating Factor
ID
(Note 2)
IDM
PD
1.25
W
W/C
C
0.01
Operating Junction and Storage Temperature
Tj, Tstg
-55~+150
Note : 1. Surface mounted on 1 in² copper pad of FR-4 board, t≤5s; 270C/W when mounted on minimum copper pad.
2. Pulse width limited by maximum junction temperature.
Thermal Performance
Parameter
Symbol
RθJA
Limit
100
50
Unit
Thermal Resistance, Junction-to-Ambient, max (Note)
Thermal Resistance, Junction-to-Case, max
C/W
RθJC
Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s ; 270C/W when mounted on minimum copper pad.
Electrical Characteristics (Tj=25C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
ΔBVDSS/ΔTj
VGS(th)
-40
-
-
-
V
V/C
V
VGS=0V, ID=-250µA
-
-1
-
-
-
-
-
-
-0.02
Reference to 25C, ID=-1mA
VDS=VGS, ID=-250µA
VGS=±20V, VDS=0V
-
-
-
-2.5
±100
-1
-10
62
75
-
IGSS
nA
VDS=-32V, VGS=0V
IDSS
µA
-
VDS=-32V, VGS=0V, Tj=70C
ID=-2.5A, VGS=-10V
ID=-2A, VGS=-4.5V
47
57
7.4
*RDS(ON)
*GFS
m
S
VDS=-10V, ID=-3A
Dynamic
Ciss
-
-
-
-
-
-
-
929
79
60
6.8
17
88.6
29.2
-
-
-
-
-
-
-
Coss
Crss
*td(ON)
*tr
*td(OFF)
*tf
pF
ns
VDS=-20V, VGS=0V, f=1MHz
Ω
VDS=-20V, ID=-2.5A, VGS=-10V, RG=6
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 3/ 9
*Qg
*Qgs
*Qgd
-
-
-
20.6
2.8
3.6
-
-
-
nC
VDS=-20V, ID=-2.5A, VGS=-10V,
Source-Drain Diode
*VSD
*trr
*Qrr
-
-
-
-0.82
9.5
4.9
-1
-
-
V
ns
nC
VGS=0V, ISD=-2.5A
IF=-2.5A, VGS=0V, dIF/dt=100A/µs
*Pulse Test : Pulse Width 300µs, Duty Cycle2%
Recommended Soldering Footprint
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 4/ 9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
30
25
20
15
10
5
-10V, -9V, -8V,-7V,-6V,-5V
-4V
-3.5V
0.8
0.6
0.4
-3V
ID=-250μA,
VGS=0V
VGS=-2.5V
0
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
1
2
3
4
5
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Source Drain Current vs Source-Drain Voltage
100
1.2
VGS=0V
VGS=-4.5V
1
0.8
0.6
0.4
0.2
Tj=25°C
VGS=-10V
Tj=150°C
10
0
2
4
6
8
10
0.01
0.1
1
10
100
-ID, Drain Current(A)
-IS, Source Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
2
1.8
1.6
1.4
1.2
1
300
270
240
210
180
150
120
90
VGS=-10V, ID=-2.5A
ID=-2.5A
0.8
0.6
0.4
60
RDS(ON)@Tj=25°C : 47mΩ typ.
30
0
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
2
4
6
8
10
Tj, Junction Temperature(°C)
-VGS, Gate-Source Voltage(V)
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 5/ 9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
10000
1.4
1.2
1
Ciss
1000
ID=-1mA
0.8
0.6
0.4
Coss
100
Crss
ID=-250μA
10
-75 -50 -25
0
25 50 75 100 125 150 175 200
0
5
10
15
20
25
30
35
40
-VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Gate Charge Characteristics
VDS=-20V
Forward Transfer Admittance vs Drain Current
10
1
10
8
6
4
2
0
VDS=-32V
0.1
0.01
VDS=-10V
Pulsed
TA=25°C
ID=-2.5A
0.001
0.01
0.1
1
10
0
4
8
12
16
Qg, Total Gate Charge(nC)
20
24
-ID, Drain Current(A)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
4
3.5
3
100
100μs
10
1
RDS(ON)
Limited
2.5
2
1ms
10ms
1.5
1
100ms
0.1
0.01
TA=25°C, VGS=-10V,RθJA=100°C/W
TA=25°C, Tj=150°C, VGS=-10V
RθJA=100°C/W, Single Pulse
1s
single pulse
0.5
0
DC
25
50
75
100
125
150
175
0.01
0.1
1
10
100
Tj, Junction Temperature(°C)
-ID, Drain-Source Voltage(V)
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 6/ 9
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
Typical Transfer Characteristics
30
300
250
200
150
100
50
VDS=-10V
25
TJ(MAX)=150°C
TA=25°C
20
15
10
5
RθJA=100°C/W
0
0
0
1
1
2
3
4
5
0.0001 0.001
0.01
0.1
Pulse Width(s)
1
10
100
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
0.1
0.01
2.Duty Factor, D=t1/t2
3.TJM-TA=PDM*RθJA(t)
4.RθJA=100°C/W
0.05
0.02
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 7/ 9
Reel Dimension
Carrier Tape Dimension
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 8/ 9
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3C/second max.
3C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100C
150C
60-120 seconds
150C
200C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183C
60-150 seconds
217C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 C
260 +0/-5 C
Time within 5C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6C/second max.
6C/second max.
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTB040P04N3
CYStek Product Specification
Spec. No. : C967N3
Issued Date : 2017.11.02
Revised Date :
CYStech Electronics Corp.
Page No. : 9/ 9
SOT-23 Dimension
Marking:
Date Code
BFPF
Device Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
3.04
1.70
1.30
0.50
2.30
0.10
Min.
Max.
Min.
0.08
0.30
0.85
2.10
0.25
0.30
Max.
0.20
0.67
1.15
2.95
0.65
0.50
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
2.80
1.20
0.89
0.30
1.70
0.00
J
K
L
S
V
0.0032
0.0118
0.0335
0.0830
0.0098
0.0118
0.0079
0.0266
0.0453
0.1161
0.0256
0.0197
L1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
Lead: Pure tin plated.
Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
CYStek reserves the right to make changes to its products without notice.
CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB040P04N3
CYStek Product Specification
相关型号：
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