MTB050N15J3 [CYSTEKEC]
N -Channel Enhancement Mode Power MOSFET;
| 型号： | MTB050N15J3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | N -Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：423K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 1/9
CYStech Electronics Corp.
N -Channel Enhancement Mode Power MOSFET
BVDSS
ID @VGS=10V
RDS(ON)@VGS=10V, ID=15A
150V
20A
47.5mΩ(typ)
47.5mΩ(typ)
MTB050N15J3
RDS(ON)@VGS=4.5V, ID=10A
Features
• Low Gate Charge
• Simple Drive Requirement
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
MTB050N15J3
TO-252(DPAK)
G
D S
G：Gate D：Drain S：Source
Ordering Information
Device
Package
TO-252
Shipping
2500 pcs / Tape & Reel
MTB050N15J3-0-T3-G
(Pb-free lead plating and halogen-free package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB050N15J3
CYStek Product Specification
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
150
±20
20
14
4.8
3.0
3.9
2.5
54
Continuous Drain Current @ TC=25°C, VGS=10V
Continuous Drain Current @ TC=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current *1
ID
*2
*2
*3
*3
IDSM
A
IDM
IAS
Avalanche Current
9.8
Avalanche Energy @ L=12mH, ID=9.8A, RG=25Ω
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=100℃
EAS
576
50
25
2.5
1.0
mJ
W
PD
*2
*2
*3
*3
PDSM
Total Power Dissipation @TA=25℃
Total Power Dissipation @TA=100℃
1.7
0.7
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Symbol
Rth,j-c
Value
Unit
°C/W
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Thermal Resistance, Junction-to-ambient, max
3
50
75
*2
*3
Rth,j-a
.
Note : *1 Pulse width limited by maximum junction temperature
*2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper.
*3. When the device is on the minimum pad size recommended.
°
*4. The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
°
*5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150 C. The value
°
in any given application depends on the user’s specific board design, and the maximum temperature of 175 C may
be used if the PCB allows it.
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
∆BVDSS/∆Tj
VGS(th)
150
-
0.15
-
47
-
-
-
2.5
-
V
V/°C
V
S
nA
VGS=0V, ID=250μA
-
1.0
-
Reference to 25°C, ID=250μA
VDS =VGS, ID=250μA
VDS =5V, ID=15A
GFS
*1
±
±
VGS= 20V, VDS=0V
IGSS
-
100
MTB050N15J3
CYStek Product Specification
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 3/9
CYStech Electronics Corp.
-
-
-
-
-
-
1
VDS =150V, VGS =0V
VDS =150V, VGS =0, Tj=55°C
VGS =10V, ID=15A
IDSS
μA
25
65
70
47.5
47.5
Ω
m
RDS(ON) *1
VGS =4.5V, ID=10A
Dynamic
Qg
Qgs
Qgd
td(ON) *1, 2
tr
-
-
-
-
-
-
-
-
-
-
-
43.7
4.2
9.0
-
-
-
-
-
-
-
-
-
-
-
*1, 2
*1, 2
*1, 2
nC
ns
ID=15A, VDS=50V, VGS=10V
12
15.6
53.4
7.4
2278
144
93
*1, 2
Ω
VDS=50V, ID=15A, VGS=10V, RG=3.3
td(OFF) *1, 2
tf
Ciss
Coss
Crss
Rg
*1, 2
pF
VGS=0V, VDS=30V, f=1MHz
f=1MHz
Ω
1.3
Source-Drain Diode
IS
-
-
-
-
-
-
-
18
54
1.2
-
*1
A
ISM *3
VSD *1
trr
0.8
60
140
V
ns
nC
IS=15A, VGS=0V
IF=15A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended soldering footprint
MTB050N15J3
CYStek Product Specification
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
50
40
30
20
10
0
10V,9V,8V,7V,6V,5V,4V,3V
2.5V
0.8
0.6
0.4
ID=250μA,
VGS=2V
VGS=0V
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
10000
1000
100
1.2
VGS=0V
1
0.8
0.6
0.4
0.2
VGS=2.5V
VGS=3V
VGS=2V
Tj=25°C
VGS=4.5V
VGS=10V
Tj=150°C
10
0
2
4
6
8
10
0.01
0.1
1
10
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=10V, ID=15A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1000
800
600
400
200
0
3
ID=15A
2.5
2
1.5
1
0.5
0
RDS(ON)@Tj=25°C : 47.5mΩ
-65 -35
-5
25
55
85 115 145 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB050N15J3
CYStek Product Specification
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
10000
1000
100
Ciss
ID=1mA
0.8
0.6
0.4
0.2
C
oss
ID=250μA
Crss
10
-65 -35
-5
25
55
85 115 145 175
0.1
1
10
100
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
8
6
4
2
0
1
VDS=5V
VDS=50V
ID=15A
0.1
0.01
Ta=25°C
Pulsed
0
10
20
30
40
50
0.001
0.01
0.1
1
10
100
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
25
20
15
10
5
100
s
100μ
1ms
RDSON
Limited
10
1
10ms
100ms
1s
DC
0.1
0.01
TC=25°C, Tj=175°C
VGS=10V, θJC=3°C/W
Single Pulse
JC
VGS=10V, Rθ =3°C/W
0
25
50
75
100
125
150
175
0.1
1
10
DS, Drain-Source Voltage(V)
100
1000
V
TC, Case Temperature(°C)
MTB050N15J3
CYStek Product Specification
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Power Rating, Junction to Case
Typical Transfer Characteristics
3000
2500
2000
1500
1000
500
50
40
30
20
10
0
VDS=10V
TJ(MAX)=175°C
TC=25°C
θJC=3°C/W
0
0.0001 0.001
0.01 0.1
Pulse Width(s)
1
10
100
0
1
2
3
4
5
VGS, Gate-Source Voltage(V)
Power Derating Curve
3.0
2.5
2.0
1.5
1.0
0.5
0.0
See Notes 2 & 5 on page 2.
See Notes 3 & 5 on page 2.
0
1
25
50
75
100
125
150
175
TA, Ambient Temperature(℃)
Transient Thermal Response Curves
D=0.5
0.2
JC
1.RθJC(t)=r(t)*Rθ
2.Duty Factor, D=t1/t2
3.TJM-TC=PDM*RθJC(t)
0.1
0.1
0.01
0.05
JC=3°C/W
4.Rθ
0.02
0.01
Single Pulse
0.001
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1
t , Square Wave Pulse Duration(s)
MTB050N15J3
CYStek Product Specification
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 7/9
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTB050N15J3
CYStek Product Specification
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 8/9
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB050N15J3
CYStek Product Specification
Spec. No. : C979J3
Issued Date : 2014.08.14
Revised Date : 2015.03.02
Page No. : 9/9
CYStech Electronics Corp.
TO-252 Dimension
Marking:
4
Device
Name
B050
Date
Code
N15
□□□□
2
3
1
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
Style: Pin 1.Gate 2.Drain 3.Source
4.Drain
Inches
Min.
Millimeters
Inches
Millimeters
DIM
DIM
Max.
0.094
0.005
0.048
0.034
0.034
0.023
0.023
0.264
0.215
0.244
Min.
Max.
2.400
0.127
1.210
0.860
0.860
0.580
0.580
6.700
5.460
6.200
Min.
0.086
0.172
Max.
0.094
0.188
Min.
2.186
4.372
Max.
2.386
4.772
A
A1
B
b
b1
C
C1
D
D1
E
0.087
0.000
0.039
0.026
0.026
0.018
0.018
0.256
0.201
0.236
2.200
0.000
0.990
0.660
0.660
0.460
0.460
6.500
5.100
6.000
e
e1
H
K
L
L1
L2
L3
P
0.163 REF
0.190 REF
0.386 0.409
0.114 REF
4.140 REF
4.830 REF
9.800 10.400
2.900 REF
0.055
0.024
0.067
0.039
1.400
0.600
1.700
1.000
0.026 REF
0.211 REF
0.650 REF
5.350 REF
V
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB050N15J3
CYStek Product Specification
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