MTB050P10F3 [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | MTB050P10F3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总9页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 1/9
CYStech Electronics Corp.
P-Channel Enhancement Mode Power MOSFET
BVDSS
-100V
-40A
MTB050P10F3
ID @ VGS=-10V
46mΩ
52mΩ
RDSON(TYP) @ VGS=-10V, ID=-20A
RDSON(TYP) @ VGS=-4.5V, ID=-15A
Features
• Low Gate Charge
• Simple Drive Requirement
• Repetitive Avalanche Rated
• Fast Switching Characteristic
• RoHS compliant package
Symbol
Outline
TO-263
MTB050P10F3
G：Gate
G
D S
D：Drain
S：Source
Ordering Information
Device
Package
TO-263
Shipping
800 pcs / Tape & Reel
MTB050P10F3-0-T7-S
(Pb-free lead plating and RoHS compliant package)
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T7 : 800 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTB050P10F3
CYStek Product Specification
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VDS
VGS
-100
±20
-40
Continuous Drain Current @ TC=25°C, VGS=-10V
Continuous Drain Current @ TC=100°C, VGS=-10V
Pulsed Drain Current
Continuous Drain Current @ TA=25°C , VGS=10V
Continuous Drain Current @ TA=70°C , VGS=10V
Avalanche Current
ID
-28
(Note 3)
(Note 2)
(Note 2)
(Note 3)
(Note 2)
(Note 3)
IDM
IDSM
-140
-3.9
-3.1
25
221
20
200
100
2
A
IAS
EAS
EAR
Avalanche Energy @ L=1mH, ID=-21A, RG=25Ω
Repetitive Avalanche Energy@ L=0.1mH
mJ
W
TC=25°C
TC=100°C
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Power Dissipation
PD
TA=25°C
Power Dissipation
PDSM
W
TA=70°C
1.3
Operating Junction and Storage Temperature
Tj, Tstg
-55~+175
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
0.75
62
Unit
°C/W
°C/W
(Note 2)
°
.
Note : 1 The power dissipation PD is based on TJ(MAX)=175 C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
.
2 The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
°
environment with TA=25 C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
°
.
3 Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
4. The static characteristics are obtained using <300μs pulses, duty cycle 0.5% maximum.
5. The RθJA is the sum of thermal resistance from junction to case RθJC and case to ambient.
MTB050P10F3
CYStek Product Specification
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 3/9
CYStech Electronics Corp.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
GFS
-100
-1.0
-
-1.3
34
-
-
-
-
-2.5
-
VGS=0V, ID=-250μA
VDS = VGS, ID=-250μA
VDS =-5V, ID=-20A
V
-
-
-
-
-
-
S
nA
±
100
-1
±
IGSS
VGS= 20V
VDS =-80V, VGS =0V
VDS =-80V, VGS =0V, Tj=125°C
VGS =-10V, ID=-20A
IDSS
μA
-25
60
70
46
52
Ω
m
*RDS(ON)
VGS =-4.5V, ID=-15A
Dynamic
*Qg
-
-
-
-
-
-
-
-
-
-
-
45
9.6
11
-
-
-
-
-
-
-
-
-
-
-
nC
ID=-21A, VDS=-50V, VGS=-10V
*Qgs
*Qgd
*td(ON)
*tr
*td(OFF)
*tf
Ciss
Coss
Crss
9.6
16.4
81.2
29.4
3233
227
141
4.3
Ω
ns
VDS=-20V, ID=-1A, VGS=-10V, RG=6
pF
VGS=0V, VDS=-25V, f=1MHz
f=1MHz
Ω
Rg
Source-Drain Diode
*IS
*ISM
*VSD
*trr
-
-
-
-
-
-
-
-40
-140
-1.2
-
A
0.84
29
37
V
ns
nC
IS=-20A, VGS=0V
IF=-20A, VGS=0V, dI/dt=100A/μs
*Qrr
-
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTB050P10F3
CYStek Product Specification
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Junction Temperature
Typical Output Characteristics
1.4
1.2
1
100
-
10V
90
80
70
60
50
40
30
20
10
0
-9V
-8V
-7V
-6V
-5V
VGS=-4V
VGS=-3V
0.8
0.6
0.4
ID=-250μA,
VGS=0V
VGS=-2V
VGS=-2.5V
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
-VDS, Drain-Source Voltage(V)
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
100
10
1.2
1
VGS=-2V
VGS=-3V
VGS=-4.5V
Tj=25°C
VGS=-2.5V
0.8
0.6
0.4
0.2
VGS=-10V
Tj=150°C
0.1
1
10
100
0
4
8
12
16
20
-ID, Drain Current(A)
-IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
VGS=-10V, ID=-20A
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
200
180
160
140
120
100
80
2.4
2
ID=-20A
1.6
1.2
0.8
0.4
0
60
40
RDS(ON)@Tj=25°C : 46mΩ typ.
20
0
-75 -50 -25
0 25 50 75 100 125 150 175 200
Tj, Junction Temperature(°C)
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
MTB050P10F3
CYStek Product Specification
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
1.2
1
10000
1000
100
Ciss
ID=-1mA
0.8
0.6
0.4
C
oss
ID=-250μA
Crss
-75 -50 -25
0
25 50 75 100 125 150 175 200
0.1
1
10
100
Tj, Junction Temperature(°C)
-VDS, Drain-Source Voltage(V)
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
100
10
10
VDS=-50V
ID=-21A
8
6
4
2
0
1
VDS=-5V
Pulsed
0.1
0.01
Ta=25°C
0
10
20
30
40
50
60
0.001
0.01
0.1
1
10
100
-ID, Drain Current(A)
Total Gate Charge---Qg(nC)
Maximum Drain Current vs Case Temperature
Maximum Safe Operating Area
50
40
30
20
10
0
1000
100
10
RDS(ON)
Limit
10
s
μ
100μs
1ms
10ms
100ms
DC
TC=25°C, Tj=175°C,
JC
1
VGS=10V,Rθ =0.75°C/W
single pulse
JC
VGS=10V, Rθ =0.75°C/W
0.1
0
25
50
75 100 125 150 175 200
0.1
1
10
100
1000
TC, Case Temperature(°C)
-VDS, Drain-Source Voltage(V)
MTB050P10F3
CYStek Product Specification
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Single Pulse Maximum Power Dissipation
Typical Transfer Characteristics
5000
4500
4000
3500
3000
2500
2000
1500
1000
500
100
90
80
70
60
50
40
30
20
10
0
VDS=-10V
TJ(MAX)=175°C
TC=25°C
θJC=0.75°C/W
0
0.0001
0.001
0.01 0.1
Pulse Width(s)
1
10
0
2
4
6
8
10
-VGS, Gate-Source Voltage(V)
Transient Thermal Response Curves
1
D=0.5
JC
θ
1.R JC(t)=r(t)*Rθ
0.2
1
2
2.Duty Factor, D=t /t
JM
C
DM
θJC
3.T -T =P *R (t)
JC
4.Rθ =0.75 °C/W
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
t1, Square Wave Pulse Duration(s)
MTB050P10F3
CYStek Product Specification
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 7/9
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTB050P10F3
CYStek Product Specification
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 8/9
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
100°C
150°C
150°C
200°C
60-120 seconds
60-180 seconds
183°C
60-150 seconds
217°C
60-150 seconds
Peak Temperature(TP)
240 +0/-5 °C
260 +0/-5 °C
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB050P10F3
CYStek Product Specification
Spec. No. : C975F3
Issued Date : 2014.08.13
Revised Date : 2014.10.02
Page No. : 9/9
CYStech Electronics Corp.
TO-263 Dimension
Marking :
B050
P10
□□□□
Device Name
Date Code
Style : Pin 1.Gate 2.Drain 3.Source
3-Lead Plastic Surface Mounted Package
CYStek Package Code : F3
*:Typical
Inches
Millimeters
DIM
Inches
Min.
Millimeters
DIM
Min.
4.470
0.000
1.170
0.710
1.170
0.310
1.170
10.010
Max.
Max.
0.184
0.006
0.054
0.036
0.054
0.021
0.054
0.406
Min.
Max.
Min.
Max.
A
A1
B
4.670
0.150
1.370
0.910
1.370
0.530
1.370
10.310
0.176
0.000
0.046
0.028
0.046
0.012
0.046
0.394
E
e
8.500
8.900
0.335
0.350
*2.540
*0.100
e1
L
4.980
15.050
5.080
2.340
1.300
5.180
15.450
5.480
2.740
1.700
0.196
0.593
0.200
0.092
0.051
0.204
0.608
0.216
0.108
0.067
b
b1
c
L1
L2
L3
V
c1
D
5.600 REF
0.220 REF
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB050P10F3
CYStek Product Specification
相关型号：
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