MTB180N06KSN3-0-T1-G [CYSTEKEC]
60V N-Channel Enhancement Mode MOSFET;
| 型号： | MTB180N06KSN3-0-T1-G |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | 60V N-Channel Enhancement Mode MOSFET |
| 文件： | 总9页 (文件大小：396K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 1/9
CYStech Electronics Corp.
60V N-Channel Enhancement Mode MOSFET
MTB180N06KSN3
BVDSS
ID@ TA=25°C, VGS=10V
55V
1.9A
RDSON@VGS=10V, ID=1.8A
145mΩ(typ)
173mΩ(typ)
Features
• Simple drive requirement
• Small package outline
RDSON@VGS=4.5V, ID=1.3A
• ESD protected gate
• Pb-free lead plating and halogen-free package
Symbol
Outline
SOT-23
MTB180N06KSN3
D
G：Gate
S：Source
D：Drain
S
G
Ordering Information
Device
Package
SOT-23
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / Tape & Reel
MTB180N06KSN3-0-T1-G
Environment friendly grade : S for RoHS compliant products, G for RoHS
compliant
Packing spec, T1 : 3000 pcs / tape & reel,7” reel
Product rank, zero for no rank products
Product name
MTB180N06KSN3
CYStek Product Specification
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
VDS
Limits
Unit
V
Drain-Source Voltage
Gate-Source Voltage
55
±20
1.9
1.5
10
VGS
Continuous Drain Current @ TA=25°C, VGS=10V (Note 3)
Continuous Drain Current @ TA=70°C, VGS=10V (Note 3)
Pulsed Drain Current (Notes 1, 2)
ID
A
IDM
Maximum Power Dissipation@ TA=25℃ (Note 3)
Maximum Power Dissipation@ TA=70℃ (Note 3)
Operating Junction and Storage Temperature Range
1.25
PD
W
0.8
Tj ; Tstg
-55~+150
°C
Note : 1. Pulse width limited by maximum junction temperature.
2. Pulse width≤ 300μs, duty cycle≤2%.
3. Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Thermal Performance
Parameter
Symbol
RθJA
Limit
100
62
Unit
Thermal Resistance, Junction-to-Ambient, max
Thermal Resistance, Junction-to-Case, max
°C/W
RθJC
Note : Surface mounted on 1 in² copper pad of FR-4 board; 270°C/W when mounted on minimum copper pad
Electrical Characteristics (Tj=25°C, unless otherwise noted)
Symbol
Static
Min.
Typ.
Max.
Unit
Test Conditions
BVDSS
VGS(th)
IGSS
55
1.0
-
-
-
-
-
-
2.5
10
1
10
185
225
-
VGS=0V, ID=250μA
VDS=VGS, ID=250μA
V
±
±
-
-
-
-
-
VGS= 16V, VDS=0V
μA
VDS=48V, VGS=0V
VDS=48V, VGS=0V (Tj=85°C)
ID=1.8A, VGS=10V
IDSS
145
173
*RDS(ON)
*GFS
mΩ
ID=1.3A, VGS=4.5V
-
1.4
S
VDS=10V, ID=1A
Dynamic
Ciss
Coss
Crss
td(ON)
tr
-
-
-
-
-
-
-
121
17
12
3.2
16.6
10.2
4.8
-
-
-
-
-
-
-
pF
ns
VDS=30V, VGS=0V, f=1MHz
Ω
VDS=30V, ID=1.8A, VGS=10V, RG=1
td(OFF)
tf
MTB180N06KSN3
CYStek Product Specification
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 3/9
CYStech Electronics Corp.
Qg
Qgs
Qgd
-
-
-
4.1
0.9
0.5
-
-
-
nC
VDS=40V, ID=1.8A, VGS=10V
Source-Drain Diode
*IS
*ISM
*VSD
-
-
-
-
-
1.9
10
1
A
V
0.78
VGS=0V, IS=0.45A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
Recommended Soldering Footprint
MTB180N06KSN3
CYStek Product Specification
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 4/9
CYStech Electronics Corp.
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
1.2
1
10
10V,9V,8V,7V,6V,5V,4.5V
9
8
7
6
5
4
3
2
1
0
4V
3.5V
0.8
0.6
0.4
μ
ID=250 A,
VGS=3V
VGS=0V
-75 -50 -25
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
0
1
2
3
DS, Drain-Source Voltage(V)
4
5
V
Static Drain-Source On-State resistance vs Drain Current
Reverse Drain Current vs Source-Drain Voltage
1000
1.2
Tj=25°C
1
0.8
0.6
0.4
0.2
VGS=4.5V
Tj=150°C
100
VGS = 10V
10
0.001
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
100
ID, Drain Current(A)
IDR, Reverse Drain Current(A)
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
1200
1000
800
600
400
200
0
2.4
2
VGS=10V, ID=1.8A
ID=1.8A
1.6
1.2
0.8
0.4
RDSON@Tj=25°C : 145mΩ typ.
-75 -50 -25
0
25 50 75 100 125 150 175
0
2
4
6
8
10
VGS, Gate-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB180N06KSN3
CYStek Product Specification
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 5/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.6
1.4
1.2
1
1000
100
10
ID=1mA
Ciss
0.8
0.6
0.4
0.2
0
C
oss
μ
ID=250 A
Crss
-75 -50 -25
0
25 50 75 100 125 150 175
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
Gate Charge Characteristics
VDS=40V
Forward Transfer Admittance vs Drain Current
10
10
8
VDS=25V
1
0.1
6
4
VDS=10V
Pulsed
2
Ta=25°C
ID=1.8A
4
0
0.01
0
1
2
3
5
0.001
0.01
0.1
1
10
ID, Drain Current(A)
Qg, Total Gate Charge(nC)
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
2.5
2
100
10
RDS(ON)
Limited
100μs
1.5
1
1ms
1
10ms
0.1
0.01
0.5
0
TA=25°C, Tj=150°, VGS=10V
JA
100ms
DC
θJA
TA=25°C, VGS=10V, R =100°C/W
θ
R
=100°C/W, Single Pulse
25
50
75
100
125
150
175
0.01
0.1
V
1
10
100
1000
DS, Drain-Source Voltage(V)
Tj, Junction Temperature(°C)
MTB180N06KSN3
CYStek Product Specification
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
10
8
10
9
8
7
6
5
4
3
2
1
0
VDS=10V
TJ(MAX)=150°C
TA=25°C
θJA
R
=100°C/W
6
4
2
0
0
1
2
3
4
5
6
7
8
9
10
0.01
0.1
1
10
100
VGS, Gate-Source Voltage(V)
Pulse Width(s)
Transient Thermal Response Curves
1
D=0.5
0.2
θJA
JA
1.Rθ (t)=r(t)*R
0.1
0.1
1
2.Duty Factor, D=t /t
2
JM
A
DM
3.T -T =P *Rθ (t)
JA
0.05
θJA
4.R =100°C/W
0.02
0.01
0.01
0.001
Single Pulse
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
t1, Square Wave Pulse Duration(s)
MTB180N06KSN3
CYStek Product Specification
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 7/9
CYStech Electronics Corp.
Reel Dimension
Carrier Tape Dimension
MTB180N06KSN3
CYStek Product Specification
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 8/9
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
8 minutes max.
6 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB180N06KSN3
CYStek Product Specification
Spec. No. : C052N3
Issued Date : 2016.12.09
Revised Date : 2016.12.12
Page No. : 9/9
CYStech Electronics Corp.
SOT-23 Dimension
Marking:
Date Code
H8NS
Device Code
3-Lead SOT-23 Plastic
Surface Mounted Package
CYStek Package Code: N3
Style: Pin 1.Gate 2.Source 3.Drain
*: Typical
Inches
DIM
Millimeters
Inches
Millimeters
DIM
Min.
Max.
Min.
Max.
3.04
1.70
1.30
0.50
2.30
0.10
Min.
Max.
Min.
0.08
0.30
0.85
2.10
0.25
0.30
Max.
0.20
0.67
1.15
2.95
0.65
0.50
A
B
C
D
G
H
0.1102 0.1204
0.0472 0.0669
0.0335 0.0512
0.0118 0.0197
0.0669 0.0910
0.0000 0.0040
2.80
1.20
0.89
0.30
1.70
0.00
J
K
L
S
V
0.0032
0.0118
0.0335
0.0830
0.0098
0.0118
0.0079
0.0266
0.0453
0.1161
0.0256
0.0197
L1
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB180N06KSN3
CYStek Product Specification
相关型号：
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