MTB44P04J3 [CYSTEKEC]
P-Channel Enhancement Mode Power MOSFET; P沟道增强型功率MOSFET
| 型号： | MTB44P04J3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总7页 (文件大小：263K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C454J3
Issued Date : 2009.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 1/7
P-Channel Enhancement Mode Power MOSFET
BVDSS
-40V
MTB44P04J3
ID
-12A
44mΩ
RDSON(MAX)
Features
• Low Gate Charge
• Simple Drive Requirement
• RoHS compliant & Halogen-free package
Equivalent Circuit
Outline
MTB44P04J3
TO-252
G：Gate D：Drain
S：Source
G D S
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C
Continuous Drain Current @ TC=100°C
Pulsed Drain Current *1
VDS
VGS
ID
-40
±20
V
-12
-8
-48
-10
5
2
36
ID
A
IDM
IAS
EAS
EAR
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH *2
Total Power Dissipation @TC=25℃
Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range
mJ
Pd
W
12
-55~+175
Tj, Tstg
°C
.
Note : *1 Pulse width limited by maximum junction temperature
*2. Duty cycle ≤ 1%
MTB44P04J3
CYStek Product Specification
Spec. No. : C454J3
Issued Date : 2009.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 2/7
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol
Rth,j-c
Rth,j-a
Value
4.1
80
Unit
°C/W
°C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
VGS(th)
GFS
-40
-1.8
-
-
-
-
-2.3
11
-
-
-
-
-3.2
-
V
V
S
nA
VGS=0, ID=-250μA
VDS =VGS, ID=-250μA
VDS =-5V, ID=-10A
*1
±
100
-1
±
VGS= 20, VDS=0
IGSS
μA VDS =-32V, VGS =0
μA
A
IDSS
-
-25
-
44
70
VDS =-30V, VGS =0, Tj=125°C
VDS =-5V, VGS =-4.5V
VGS =-10V, ID=-10A
VGS =-7V, ID=-8A
ID(ON) *1
-12
-
-
38
Ω
m
m
RDS(ON) *1
Ω
-
50
Dynamic
Qg
Qgs
Qgd
td(ON) *1, 2
tr
-
-
-
-
-
-
-
-
-
-
-
11.5
2.5
3.2
7
10
20
-
-
-
-
-
-
-
-
-
-
-
*1, 2
*1, 2
*1, 2
nC
ID=-6A, VDS=-10V, VGS=-4.5V
VDS=-10V, ID=-1A, VGS=-10V,
*1, 2
ns
Ω
RG=6
td(OFF) *1, 2
tf
Ciss
Coss
Crss
Rg
12
*1, 2
1223
405
366
5.8
pF
VGS=0V, VDS=-20V, f=1MHz
VGS=15mV, VDS=0, f=1MHz
Ω
Source-Drain Diode
IS
-
-
-
-
-
-
-
-
15
8
-12
-48
-1.3
-
*1
A
ISM *3
VSD *1
trr
V
ns
nC
IF=IS, VGS=0V
IF=-5A, dIF/dt=100A/μs
Qrr
-
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Ordering Information
Device
Package
TO-252
Shipping
Marking
B44P04
MTB44P04J3
2500 pcs / Tape & Reel
(RoHS compliant & Halogen-free package)
MTB44P04J3
CYStek Product Specification
Spec. No. : C454J3
Issued Date : 2009.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 3/7
Characteristic Curves
On-Resistance Variation with Drain Current and Gate Voltage
On-Region Characteristics
50
2.5
2
VGS = - 10.0V
VGS = - 3.5 V
- 8.0V
40
30
20
10
- 7.0V
- 5.0 V
- 6.0V
- 6.0 V
- 7.0 V
1.5
- 8.0 V
- 5.0V
- 4.0V
- 10.0 V
1
- 3.5V
0.5
0
0
10
20
30
40
50
0
1
2
3
4
5
- ID - Drain Current(A)
-V - Drain-to-Source Voltage(V)
DS
On-Resistance Variation with Temperature
ID =-9A
On-Resistance Variation with Gate-to-Source Voltage
ID = - 4.5A
1.9
0.2
VGS =- 10V
1.6
1.3
1.0
0.15
0.1
TA = 125°C
TA = 25°C
0.05
0
0.7
0.4
2
4
6
8
10
-50
-25
0
25
50
75 100
T - Junction Temperature (°C)
125 150
- V - Gate-to-Source Voltage(V)
GS
J
Body Diode Forward Voltage Variation
withSourceCurrent andTemperature
Transfer Characteristics
30
25
100
V = - 10V
DS
T =-55°C
A
V = 0V
GS
10
1
20
10
15
25°C
T = 125°C
A
-55°C
25°C
0.1
125°C
0.01
5
0
0.001
1.5
2.5
3.5
4.5
5.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V - Body Diode Forward Voltage(V)
SD
-V - Gate-SourceVoltage( V)
GS
MTB44P04J3
CYStek Product Specification
Spec. No. : C454J3
Issued Date : 2009.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 4/7
Characteristic Curves(Cont.)
Gate Charge Characteristics
Capacitance Characteristics
1500
1200
10
f =1MHz
V = 0 V
GS
ID =- 9A
8
6
4
Ciss
VDS =- 15V
- 20V
900
600
Coss
Cr ss
300
0
2
0
40
0
10
20
30
0
4
8
12
16
- V , Drain-Source Voltage(V)
DS
Qg - GateCharge(nC)
Single Pulse Maximum Power Dissipation
SinglePulse
Maximum Safe Operating Area
50
40
30
20
80
R =6°C/W
θJC
50
T = 25°C
C
RDS(ON) Limit
100μs
1ms
10ms
100ms
1s
10s
10
DC
VGS= -10V
SinglePulse
10
0
RθJC =6°C/W
T = 25°C
C
1
0
0.001
0.01
0.1
t 1,Time (sec)
1
10
100
0
1
10
-VDS - Drain-Source Voltage(V)
40 50
Effective Transient Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
Notes:
0.1
0.05
P
DM
t1
t2
0.02
0.01
t1
1.Dut y Cycle,D =
t2
2.RθJC=6°C/W
3.T - TC =P* RθJC(t)
J
Sin gle Pu lse
4.RθJC (t)=r(t) * R
θJC
0.01
0.1
0.00001
0.0001
0.001
0.01
1
t1 , Pulse Width(ms)
MTB44P04J3
CYStek Product Specification
Spec. No. : C454J3
Issued Date : 2009.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 5/7
Reel Dimension
Carrier Tape Dimension
MTB44P04J3
CYStek Product Specification
Spec. No. : C454J3
Issued Date : 2009.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 6/7
Recommended wave soldering condition
Product
Peak Temperature
Soldering Time
5 +1/-1 seconds
Pb-free devices
260 +0/-5 °C
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
Time maintained above:
−Temperature (TL)
− Time (tL)
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
10-30 seconds
20-40 seconds
Ramp down rate
6°C/second max.
6°C/second max.
6 minutes max.
8 minutes max.
Time 25 °C to peak temperature
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTB44P04J3
CYStek Product Specification
Spec. No. : C454J3
Issued Date : 2009.03.11
Revised Date :
CYStech Electronics Corp.
Page No. : 7/7
TO-252 Dimension
A
C
Marking:
D
B
Device Name
Date code
F
G
L
3
H
2
E
K
I
Style: Pin 1.Gate 2.Drain 3.Source
1
J
3-Lead TO-252 Plastic Surface Mount Package
CYStek Package Code: J3
*: Typical
Inches
Millimeters
Inches
Min. Max.
0.0866 0.1102
Millimeters
DIM
DIM
Min.
Max.
Min.
0.45
1.65
0.90
0.45
6.20
5.40
Max.
0.55
1.95
1.50
0.60
6.80
5.80
Min.
Max.
2.80
*2.30
1.14
0.88
5.50
1.60
A
B
C
D
E
F
0.0177 0.0217
0.0650 0.0768
0.0354 0.0591
0.0177 0.0236
0.2441 0.2677
0.2125 0.2283
G
H
I
J
K
L
2.20
-
-
-
*0.0906
0.0449
0.0346
-
-
-
0.2047 0.2165
0.0551 0.0630
5.20
1.40
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead : KFC; pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTB44P04J3
CYStek Product Specification
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